Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

著者

• International Conference on SiC and Related Materials
• Carter, Calvin H., Jr.

書誌事項

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

editors, Calvin H. Carter, Jr., ... [et al.]

（Materials science forum, v. 338-342）

Trans Tech Publications, c2000

• : set
• pt. 1
• pt. 2

内容説明・目次

内容説明

Silicon carbide is the semiconductor of choice for new applications including electric power devices, high frequency devices, high temperature devices, and radiation resistant devices. The III-Nitride compound semiconductors are well suited for optoelectronics and are promising materials for high frequency devices. This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99), held October 10-15, 1999, at Research Triangle Park, North Carolina.

目次

• Committees and Sponsors Preface and Overview Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications Large Diameter PVT Growth of Bulk 6H SiC Crystals Progress in SiC Bulk Growth Generation and Properties of Semi-Insulating SiC Substrates Vanadium-free Semi-insulating 4H-SiC Substrates Numerical Simulation of SiC Boule Growth by Sublimation Global Numerical Simulation of Heat and Mass Transfer during SiC Bulk Crystal PVT Growth An Analytical Study of the SiC Growth Process from Vapor Phase Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions Experimental and Theoretical Analysis of the Thermal Conductivity of SiC Powder as Source Material for SiC Bulk Growth Seed Surface Preparation for SiC Sublimation Growth Single Crystal Growth of 6H-SiC on Saw-Damaged Substrate by Sublimation Method Thermal Decomposition Cavities in Physical Vapor Transport Grown SiC Initial Stage of Crystallization in the Growth of Silicon Carbide on Substrate with Micropipes Nucleation of Dislocations during Physical Vapor Transport Growth of Silicon Carbide Plastic Deformation and Residual Stresses in SiC Boules Grown by PVT Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation SiC Single Crystal Growth Rate Measurement by In-Situ Observation using the Transmission X-Ray Technique Role of Temperature Gradient in Bulk Crystal Growth of SiC Pressure Effect in Sublimation Growth of Bulk SiC Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVT Evaporation Behavior of SiC Powder for Single Crystal Growth-An Experimental Study on Thermodynamics and Kinetics Considerations on the Crystal Morphology in the Sublimation Growth of SiC Shape of SiC Bulk Single Crystal Grown by Sublimation Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid Top-seeded Solution Growth of Bulk SiC: Search for Fast Growth Regimes Controlled Growth of Bulk 15R-SiC Single Crystals by the Modified Lely Method Crystal Growth of 15R-SiC Boules by Sublimation Method Growth of 3C SiC Single Crystals from Convection Dominated Melts An Overview of SiC Growth Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments Morphology Control for Growth of Thick Epitaxial 4H SiC Layers Vertical Hot-Wall Type CVD for SiC Growth LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers 3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor 3-D Thermal and Flow Modeling of Hot Wall Epitaxial Chemical Vapor Deposition Reactors, Heated by Induction The Development of Resistive Heating for the High Temperature Growth of -SiC using a Vertical CVD Reactor Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy High Growth Rate Epitaxy of Thick 4H-SiC Layers Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor Multi-Wafer VPE Growth and Characterization of SiC Epitaxial Layers Homoepitaxy of Silicon Carbide Using the Single Precursor 1,3-Disilabutane Supersonic Seeded Beam Assisted Growth of Epitaxial Silicon Carbide 4H-SiC Substrate Orientation Effects on Hydrogen Etching and Epitaxial Growth 4H-SiC (11-20) Epitaxial Growth Homoepitaxial Growth of 6H SiC on Single Crystalline Spheres Morphological Stability of 6H-SiC Epitaxial Layer on Hemispherical Substrates Prepared by Chemical Vapor Deposition Growth of SiC on 6H-SiC {01-14} Substrates by Gas Source Molecular Beam Epitaxy Molecular Beam Epitaxial Growth of Heteropolytypic and Low-Dimensional Structures of SiC Thermodynamical Consideration of the Epitaxial Growth of SiC Polytypes Mechanisms of SiC(111) Step Flow Growth Mechanism of Various Defects Formation in Epitaxial Layer Prepared by Sublimation Epitaxy Investigation of 3C-SiC Epitaxial Layers Grown by Sublimation Epitaxy Growth of SiC and GaN on Porous Buffer Layers 4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates Temperature Gradient Effect on SiC Epitaxy in Liquid Phase Micropipe Healing in Liquid Phase Epitaxial Growth of SiC Growth of CVD Thin Films and Thick LPE 3C SiC in a Specially Designed Reactor Lateral Epitaxial Overgrowth and Pendeo Epitaxy of 3C-SiC on Si Substrates Selective Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates Using Hexachlorodisilane and Propane The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate Improvement of 3C-SiC Surface Morphology on Si(100) by Adding HCl using Atmospheric CVD Carbonization on (100) Silicon for Heteroepitaxial Growth of 3C-SiC Growth of 3C-SiC/Si Multilayer Heterostructures by Supersonic Free Jets Formation of High Quality SiC on Si(100) at 900 DegreesC using Monomethylsilane Gas-Source MBE Growth and Characterization of N-Doped SiC Films from Trimethylsilane The Effect of Ge on the Structure & Morphology of SiC Films Grown on (111) Si Substrates In Situ Monitoring of the Effect of Ge on the SiC Growth on (111)Si Surfaces Structural Investigations of the Nucleation and Growth of SiC during Rapid Thermal Conversion of (111)Si The Influence of Foreign Atoms on the early Stages of SiC Growth on (111)Si Studies of the Initial Stages of Silicon Carbide Growth using Molecular Hydrocarbon and Methyl Radical Gas Species Carbonization of SIMOX Substrates for Fabrication of Single-crystal SiC-on-insulator SOL Thinning Effects on 3C-SiC on SOI* Low Temperature Growth of 3C-SiC on Silicon for Advanced Substrate Development Epitaxial Growth of -SiC on Ion-Beam Synthesized -SiC: Structural Characterization Growth of Single Crystalline 3C-SiC and AIN on Si using Porous Si as a Compliant Seed Crystal The Growth and Characterization of 3C-SiC/SiNx/Si Structure The Diffusion Coefficient of Silicon in Thin SiC Layers as a Criterion for the Quality of the Grown Layers Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si Thin Films of -Si1-xCx:H Deposited by PECVD: The r.f. Power and H2 Dilution Role Surface Composition of 4H-SiC as a Function of Temperature Stacking Rearrangement on SiC Surfaces: A Possible Seed for Polytype Heterostructure Growth Atomic Structure of 6H-SiC(000-1)-(2x2)c Ab Initio Calculation on Clean and Oxygen Covered 6H-SiC(0001) Surfaces: ( 3x 3)R30 Degrees Reconstruction Photo-Emission Electron Microscopy (PEEM) of Cleaned and Etched 6H-SiC(0001) High Resolution Electron Energy Loss Spectroscopy of 3x 3 6H-SiC(0001) In-Situ RHEED Analysis During -SiC Homoepitaxy on (0001)Si- and (000-1)C-Faces by Gas Source Molecular Beam Epitaxy (10-10)- and (11-20)-Surfaces in 2H-, 4H- and 6H-SiC Theory of Structural and Electronic Properties of Cubic SiC Surfaces Characterization of Anisotropic Step-bunching on as-grown SiC Surfaces Observation of Macrostep Formation on the (0001) Facet of Bulk SiC Crystals Silicate Monolayers on the Hexagonal Surfaces of 4H- and 6H-SiC Electronic and Atomic Structure of an Ordered Silicate Adlayer on Hexagonal SiC Photoemission Study of the Silicate Adlayer Reconstruction on Si-terminated 6H-SiC (0001) Initial Oxidation of the Si-terminated 6H-SiC(0001) 3x3 Surface XPS Analysis of SiO2/SiC Interface Annealed in Nitric Oxide Ambient Surface Studies on Thermal Oxidation on 4H-SiC Epilayer Quantified Conditions for Reduction of ESO Contamination During SiC Metalization Thermal Annealing Effect on TiN/Ti Layers on 4H-SiC: Metal-Semiconductor Interface Characterization A Surface/Interfacial Structural Model of Pd Ultra-thin Film on SiC at Elevated Temperatures Study of a Clean Surface of - SiC and its Metallization Process by Cu, Au and Ni using STM and Electron/Photon Spectroscopies Monolayer Growth Modes of Re and Nb on the Polar Faces of 4H-SiC Group- Adsorption and Bond Stacking on SiC(111) Surfaces Characterization of SiC using Synchrotron White Beam X-ray Topography Growth of Low Micropipe Density SiC Wafers Investigation of the Origin of Micropipe Defect Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals Origin of the Internal Stress Around the Micropipe of 6H-SiC Single Crystal Structural Investigation on the Nature of Surface Defects Present in Silicon Carbide Wafers Containing Varying Amount of Micropipes In-situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography X-ray Topographic Study of SiC Crystal at High Temperature Synchrotron White Beam Topography Studies of 2H SiC Crystals Synchrotron White Beam X-ray Topography and Atomic Force Microscopy Studies of a 540R-SiC Lely Platelet X-ray Characterization of 3 inch Diameter 4H and 6H-SiC Experimental Wafers Origin of Threading Dislocation Arrays in SiC Boules Grown by PVT Structural Characterization of Silicon Carbide Etched by Using a Combination of Ion Implantation and Wet Chemical Etching Polytype and Defect Control of Two Inch Diameter Bulk SiC Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes Investigation of Low Angle Grain Boundaries in Modified-Lely SiC Crystals by High Resolution X-ray Diffractometry Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC High Order X-ray Diffraction and Internal Atomic Layer Roughness of Epitaxial and Bulk SiC Materials 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density Structural and Optical Studies of Low-Doped n-6H SiC Layers Grown by Vacuum Sublimation Stacking Fault Energy of 6H-SiC and 4H-SiC Single Crystals Deformation Tests on 4H-SiC Single Crystals between 900 DegreesC and 1360 DegreesC and the Microstructure of the Deformed Samples Void Shapes in the Si (111) Substrate at the Heteroepitaxial Thin Film / Si Interface Defect Characterization in 3C-SiC Films Grown on Thin and Thick Silicon Top Layers of SIMOX Structural Characteristics of 3C-SiC Films Epitaxially Grown on the Si/Si3N4/SiO2 System Illusion of New Polytypes Microstructural, Optical and Electronic Investigation of Anodized 4H-SiC Characterization of Polycrystalline SiC Grown on SiO2 and Si3N4 by APCVD for MEMS Applications Theory of Below Gap Absorption Bands in n-Type SiC Polytypes
• Or, how SiC got its Colors Absorption Bands Associated with Conduction Bands and Impurity States in 4H and 6H SiC Determination of the Polarization Dependence of the Free-Carrier-Absorption in 4H-SiC at High-Level Photoinjection Bandstructure and Transport Properties of 4H- and 6H-SiC: Optically Detected Cyclotron Resonance Investigations Hole Effective Masses in 4H SiC Determined by Optically Detected Cyclotron Resonance Differential Absorption Measurement of Valence Band Splittings in 4H SiC Anisotropic Dielectric Function Properties of Semi-insulating 4H-SiC Determined from Spectroscopic Ellipsometry Optical Characterization of 4H-SiC by Variable Angle of Incidence Spectroscopic Ellipsometry Isotope Effects on the Raman Spectrum of SiC Disappearance of the LO-Phonon Line in the UV-Raman Spectrum of 6H-SiC Selectively Resonant Raman Spectra of Folded Phonon Modes in SiC Raman Spectral Profiles of Folded Longitudinal Modes in SiC under Off-resonant Condition Raman Spectroscopy on Biaxially Strained Epitaxial Layers of 3C-SiC on Si Characterization of 3C-SiC/SOI Deposited with HMDS Raman Imaging Characterization of Electric Properties of SiC Near a Micropipe Carrier Density Evaluation in P-Type SiC by Raman Scattering Shallow Nitrogen Donor States in 4H-SiC Investigated by Photothermal Ionization Spectroscopy Characterization of Silicon Carbide using Raman Spectroscopy Photoluminescence Study of CVD Layers Highly Doped with Nitrogen Low Temperature Photoluminescence of 13C Enriched SiC-Crystals Grown by the Modified Lely Method Sub- m Scale Photoluminescence Image of SiC and GaN at a Low Temperature Vanadium-related Center in 4H Silicon Carbide Spectroscopic Investigation of Vanadium Acceptor Level in 4H and 6H-SiC Photoluminescence and DLTS Measurements of 15MeV Erbium Implanted 6H and 4H SiC Electronic States of Vacancies in 3C- and 4H-SiC Pseudo-Donors in SiC Metastability of a Hydrogen-related Defect in 6H-SiC Optical Characterization of Lattice Damage and Recovery in Ion-Implanted and Pulsed Excimer Laser Irradiated 4H-SiC Microscopic Probing of Raman Scattering and Photoluminescence on C-Al Ion Co-Implanted 6H-SiC Confocal Raman Microprobe of Lattice Damage in N+ Implanted 6H-SiC Ion Beam Induced Change in the Linear Optical Properties of SiC Free Carrier Diffusion Measurements in Epitaxial 4H-SiC with a Fourier Transient Grating Technique: Injection Dependence Time-Resolved Photoluminescence Study of Bound and Free Excitons in 4H SiC Optical Lifetime Measurements in 4H SiC Optical Characterization of 4H-SiC p+n-n+ Structures Applying Time- and Spectrally Resolved Emission Microscopy Electroluminescence From Implanted and Epitaxially Grown pn-Diodes Avalanche Breakdown Electroluminescence in Silicon Carbide Light Emitting Diodes Photon Emission Mechanisms in 6H and 4H-SiC MOSFETs Non-Contact Photovoltage Measurements in SiC Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide MicroRaman and Hall Effect Study of n-Type Bulk 4H-SiC Electrical Properties of 3C-SiC Grown on Si by CVD Method using Si2(CH3)6 Electrical and Physical Behavior of SiC Layers on Insulator (SiCOI) Theoretical Treatments of Band Edges in SiC Polytypes at High Carrier Concentrations A Theoretical Study of Electron Drift Mobility Anisotropy in n-Type 4H-and 6H-SiC Theoretical Calculation of the Electron Hall Mobility in n-Type 4H- and 6H-SiC Hall Scattering Factor and Electron Mobility of 4H SiC: Measurements and Numerical Simulation Hall Mobility of the Electron Inversion Layer in 6H-SiC MOSFETs Application and Improvement of the Spreading Resistance Method for p-Type 6H-SiC Theoretical Study of Carrier Freeze-Out Effects on Admittance Spectroscopy and Frequency-Dependent C-V Measurements in SiC On the Existence of Deep Levels of the Acceptors Ga and In and of the Potential Double Acceptors Zn and Cd in SiC Correlation between DLTS and Photoluminescence in He-implanted 6H-SiC Observation of Deep Levels in SiC by Optical-Isothermal Capacitance Transient Spectroscopy Improved Measurements of High-Field Drift Velocity in Silicon Carbide A Full Band Monte Carlo Study of High Field Carrier Transport in 4H-SiC Electron Saturated Vertical Velocities in Silicon Carbide Polytypes High Temperature Effects on the Terahertz Mobility of Hot Electrons in 3C-SiC and 6H-SiC Electron Beam Induced Current Investigation of High-Voltage 4H Silicon Carbide Diodes Measurement of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Power Diodes Donors and Acceptors in SiC-Studies with EPR and ENDOR ESR Spectrum of Nitrogen in 6H SiC in the Ground and Excited States Dopant-related Complexes in SiC The Spatial Distribution of the Electronic Wave Function of the Shallow Boron Acceptor in 4H- and 6H-SiC The Electronic Structure of the Be Acceptor Centers in 6H-SiC Electron Paramagnetic Resonance of the Scandium Acceptor in 4H and 6H Silicon Carbide ESR Study of Delamination in H+ Implanted Silicon Carbide Vacancies and their Complexes with H in SiC The Carbon Vacancy Pair in 4H and 6H SiC Electron Spin Resonance in Neutron-Irradiated n-type 6H-Silicon Carbide Physics of SiC Processing Polishing and Surface Characterization of SiC Substrates Comparison of Mechanical and Chemomechanical Polished SiC Wafers Using Photon Backscattering Damage-Free Surface Modification of Hexagonal Silicon Carbide Wafers Nuclear Transmutation Doping of Phosphorus into 6H-SiC Radiation Defects and Doping of SiC with Phosphorous by Nuclear Transmutation Doping (NTD) Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions Hot-Implantation of Phosphorus Ions into 4H-SiC Electrical Characteristics and Surface Morphology for Arsenic Ion-Implanted 4H-SiC at High Temperature Damage Evolution in Al-implanted 4H SiC Excimer Laser Annealing of Ion-Implanted 6H-Silicon Carbide High Concentration Doping of 6H-SiC by Ion Implantation: Flash versus Furnace Annealing Consequences of High-Dose, High Temperature Al+ Implantation in 6H-SiC Al and Al/C High Dose Implantation in 4H-SiC Channeled Implants in 6H Silicon Carbide Damage Reduction in Channeled Ion Implanted 6H-SiC Ion Beam Induced Nanocrystallization of SiC High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching Characterization of Implantation Layer in (1-100) Oriented 4H- and 6H- SiC Electrical and Structural Properties of Al and B Implanted 4H-SiC Secondary Defect Distribution in High Energy Ion Implanted 4H-SiC Coimplantation Effects of (C and Si)/Ga in 6H-SiC Improved Annealing Process for 6H-SiC p+-n Junction Creation by Al Implantation Characteristics of n-p Junction Diodes made by Double-Implantations into SiC Reactivation of Hydrogen-Passivated Aluminum Acceptors in p-type SiC Formation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of Hydrogen Metal-contact Enhanced Incorporation of Deuterium in 4H- and 6H-SiC Transient-Enhanced Diffusion of Boron in SiC Selective Doping of 6H-SiC by Diffusion of Boron Ab Initio Study of Intrinsic Point defects and Dopant-defect Complexes in SiC: Application to Boron Diffusion Beryllium Implantation Doping of Silicon Carbide Ion-Channeling Studies of Interfaces and Defect Properties in Silicon Carbide Formation of Precipitates in 6H-SiC after Oxygen Implantation and Subsequent Annealing Microstructural Evolution of Radiation-Induced Defects in Semi-Insulating SiC During Isochronal Annealing Vacancy-Type Defects in Proton-Irradiated 6H- and 4H-SiC: A Systematic Study with Positron Annihilation Techniques Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation Radiation-induced Conductivity and Simultaneous Photoconductivity Suppression in 6H-SiC under 17 MeV Proton Irradiation Study of Contact Formation by High Temperature Deposition of Ni on SiC Ohmic Contact Formation on n-Type 6H-SiC using NiSi2 Lowering the Annealing Temperature of Ni/SiC for Ohmic Contacts under N2 Gas, and Application to a UV Sensor Adhesion and Microstructure of Ni Contacts to 3C-SiC Low Resistance Ohmic Contacts to n-SiC Using Niobium A Comparison of Single- and Multi-Layer Ohmic Contacts Based on Tantalum Carbide on n-Type and Osmium on p-Type Silicon Carbide at Elevated Temperatures Improved Ohmic Contacts to 6H-SiC by Pulsed Laser Processing Al/Si Ohmic Contacts to p-Type 4H-SiC for Power Devices Searching for Device Processing Compatible Ohmic Contacts to Implanted p-Type 4H-SiC Structural and Morphological Characterization of Al/Ti-Based Ohmic Contacts on p-Type 4H-SiC Annealed Under Various Conditions Thermal Stability in Vacuum and in Air of Al/Ni/W Based Ohmic Contacts to p-Type SiC A UHV Study of Ni/SiC Schottky Barrier and Ohmic Contact Formation Fermi Level Pinning and Schottky Barrier Characteristics on Reactively Ion Etched 4H-SiC Real-Time Assessment of Overlayer Removal on 4H-SiC Surfaces: Techniques and Relevance to Contact Formation Pre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low Pressure SiC In-Situ Pre-Growth Etching: A Thermodynamic Study The Effect of In Situ Surface Treatment on the Growth of 3C-SiC Thin Films on 6H-SiC Substrate - An X-ray Triple Crystal Diffractometry and Synchrotron X-ray Topography Study Dry Etching and Metallization Schemes in a GaN/SiC Heterojunction Device Process Demonstration of Deep (80 m) RIE Etching of SiC for MEMS and MMIC Applications Reactive Ion Etching in CF4 / O2 Gas Mixtures for Fabricating SiC Devices Electrochemical C-V Profiling of P-type 6H-SiC Electrically Active Traps at the 4H-SiC/SiO2 Interface Responsible for the Limitation of the Channel Mobility Anomalously High Density of Interface States Near the Conduction Band in SiO2/4H-SiC MOS Devices Effect of Post-oxidation-annealing in Hydrogen on SiO2/4H-SiC Interface Process Dependence of Inversion Layer Mobility in 4H-SiC Devices Controlled Thermal Oxidation of Sacrificial Silicon on 4H-SiC Epilayer Ozone Treament of SiC for Improved Performance of Gas Sensitive Schottky Diodes Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide SiC Devices with ONO Stacked Dielectrics The Effect of Si:C Source Ratio on SiO2/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiC Channel Doped SiC-MOSFETs Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation Interface Trap Profiles Near the Band Edges in 6H-SiC MOSFETs Characterization of SiC MOS Structures using Conductance Spectroscopy and Capacitance Voltage Analysis Mobility in 6H-SiC n-Channel MOSFETs Effects of Oxidation Conditions on the Concentration of Carbon Dangling Bonds in Oxidized 6H-SiC Effects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor Structures Atomic-Scale Engineering of the SiC-SiO2 Interface Comparison of High-Temperature Electrcial Characterizations of Pulsed-Laser Deposited AIN on 6H- and 4H-SiC from 25 to 450 DegreesC Molding-based Thin Film Patterning Techniques for SiC Surface Micromachining Bulk Micromachining of Polycrystalline SiC Using Si Molds Fabricated by Deep Reactive Ion Etching Preliminary Investigation of SiC on Silicon for Biomedical Applications SiC and GaN High-Voltage Power Switching Devices Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices Performance and Reliability Issues of SiC-Schottky Diodes Designing, Physical Simulation and Fabrication of High-Voltage (3.85 kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall and Chimney CVD Films Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-voltage 4H-SiC Schottky Diodes A 2.8kV, Forward Drop JBS Diode with Low Leakage 3.6 kV 4H-SiC JBS Diodes with Low RonS Fabrication and Testing of 1,000V-60A 4H-SiC MPS Diodes in an Inductive Half-Bridge Circuit Large Contact Ti/4H-SiC Schottky Diodes Fabricated Using Standard Silicon Processing Techniques Optical Beam Induced Current Analysis of High-Voltage 4H-SiC Schottky Rectifiers Effect of Plasma Etching and Sacrificial Oxidation on 4H-SiC Schottky Barrier Diodes 4H-SiC Device Scaling Development on Repaired Micropipe Substrates Design and Characterization of a SiC Schottky Diode Mixer Breakdown Voltage Improvement of 4H-SiC Schottky Diodes by a Thin Surface Implant DC and Pulse Characterizations of (600V) 6H-SiC Schottky Diode Breakdown 6H-SiC Schottky Barrier Diodes with Nearly Ideal Breakdown Voltage Lateral Current Spreading in SiC Schottky Diodes using Field-Plate Edge Termination Characterization of Schottky Contact on p-type 6H-SiC Computer Simulation of P-type SiC Schottky Diode using ATLAS Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition Characterization of Au Schottky Contacts on p-Type 3C-SiC Gown by Low Pressure Chemical Vapor Deposition Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories Power Density Comparison between Microwave Power MESFET's Processed on Conductive and Semi-Insulating Wafer Surface Induced Instabilities in 4H-SiC Microwave MESFETs Characterization of SiC MESFETs on Conducting Substrates Fabrication, Characterization, and Modeling of SiC MESFETs Physical Simulations on the Operation of 4H-SiC Microwave Power Transistors Properties of Transmission Lines on Various SiC Substrates High Temperature, High Current, 4H-SiC Accu-DMOSFET 4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETs Nitrogen vs. Phophorus as Implant Species for High-Voltage Lateral RESURF MOSFETs on 4H-SiC Effect of Off-Angle from Si (0001) Surface and Polytype on Surface Morphology of SiC and C-V Characteristics of SiC MOS Structures Accumulation-Mode SiC Power MOSFET Design Issues Progress Towards a Manufacturable SiC Mixed Analog-Digital Integrated Circuit Technology+ Rugged Power MOSFETs in 6H-SiC with Blocking Capability up to 1800V Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs Effect of Boron Implantation on 6H-SiC N-MOSFET Interface Properties Investigation of Lateral RESURF, 6H-SiC MOSFETs Highly Durable SiC nMISFET's at 450 DegreesC SiC MISFETs with MBE-grown AlN Gate Dielectric Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities Current Voltage Characteristics of High-Voltage 4H Silicon Carbide Diodes Dynamic Avalanche and Trapped Charge in 4H-SiC Diodes Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers Dynamic and Steady-State Description of Incomplete Ionization in 4H-SiC Power Diodes under Turn-Off Simulation and Fabrication of High-Voltage 4H-SiC Diodes with Multiple Floating Guard Ring Termination Transient Characterization of SiC P-N Diode Formation of Deep pn Junctions by MeV Al- and B-ion Implantations into 4H-SiC and Reverse Characteristics Defect Modeling and Simulation of 4-H SiC P-N Diode 6H-SiC Diodes with Cellular Structure to Avoid Micropipe Effects A Closed-form Analytical Solution of 6H-SiC Punch-through Junction Breakdown Voltages Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation Al/C/B Co-Implanted High-Voltage 4H-SiC PiN Junction Rectifiers 6.2KV 4H-SiC pin Diode with Low Forward Voltage Drop Theoretical and Experimental Study of 4H-SiC Junction Edge Termination Monte Carlo Simulation of 4H-SiC IMPATT Diodes Demonstration of High Performance Visible-blind 4H-SiC Avalanche Photodiodes 2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development Factors Influencing the Design and Performance of 4H-SiC GTO Thyristors 4H-SiC Gate Turn-Off Thyristor Designs for Very High Power Control Fabrication and Characterization of 4H-SiC GTOs and Diodes 100 kHz Operation of SiC Junction Controlled Thyristor (JCT) Switches used in an All-SiC PWM Inverter SiC-Power Rectifiers Comparison of 5 kV 4H-SiC N-Channel and P-Channel IGBTs Design and Simulations of 5000V MOS-Gated Bipolar Transistor (MGT) on 4H-SiC TCAD Evaluation of Double Implanted 4H-SiC Power Bipolar Transistors Operation of a 2500V 150A Si-IGBT / SiC Diode Module High-Power P-Channel UMOS IGBT's in 6H-SiC for High Temperature Operation High Temperature 4H-SiC FET for Gas Sensing Applications High Temperature Gas Sensors Based on Catalytic Metal Field Effect Transistors SiC-Based Gas Sensor Development Fabrication of SiC Hydrogen Sensor by Pd-Implantation Epitaxial 6H-SiC Layers as Detectors of Nuclear Particles GaN Quantum Dots on Sapphire and Si Substrates Achievement of MBE-Grown GaN Heteroepitaxial Layer with (0001) Ga-Polarity and Improved Quality by In Exposure Crack-Free, Single-Crystal GaN Grown on 100 mm Diameter Silicon 3C-SiC Pseudosubstrates for the Growth of Cubic GaN Lateral- and Pendeo-Epitaxial Growth and Defect Reduction in GaN Thin Films Pendeoepitaxy of GaN and InGaN LEDs on SiC Comparison of Different Epitaxial Lateral Overgrowth GaN Structures using SiO2 and Tungsten Mask by Cathodoluminescence Microscopy and Micro-Raman Spectroscopy High Quality GaN on Si(111) using (AlN/GaN)x Superlattice and Maskless ELO Pendeo-EpitaxyTM Process for Aluminum Gallium Nitride Thin Films on Silicon Carbide Substrates via Metalorganic Chemical Vapor Deposition Reduction of Defects on GaN and AlGaN by In-Doping in Metalorganic Vapor Phase Epitaxy Comparison of AlGaN and GaN Grown on Various Substrates: Step Flow Growth on LiGaO2 at Low Growth Temperature Pulsed Laser Deposition: A Novel Growth Technique for Wide-Bandgap Semiconductor Research Investigation into the Film Growth of AlN on SiC by Low Pressure Chemical Vapour Deposition AlN Epitaxial Films Grown by ECR Plasma Assisted Metalorganic Chemical Vapor Deposition under Controlled Plasma Condition in Afterglow Region Silicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport Process Low-Energy-Ion-Assisted Reactive Sputter Deposition of Epitaxial AlN Thin Films on 6H-SiC Pulsed Laser Deposition of Oriented Aluminum Nitride Thin Films and Their Application State of Art of c-BN Growth Physics: Substrate Effect Adsorption and Desorption of Hydrogen on Ga-rich GaN(0001) Extremely Efficient Electron Stimulated Desorption of Hydrogen from GaN(0001) The Reaction of Oxygen with GaN(0001) Observation of Cubic GaN/AlN Heterointerface Formation by RHEED in Plasma-Assisted Molecular Beam Epitaxy Analysis of Dislocation Densities and Nanopipe Formation in MBE-grown AlN-Layers Correlation between Optical and Structural Properties of Thick GaN Films Grown by Direct Reaction of Ga and NH3 Improved Electron Emission from Defective Diamond Film Deposited by CVD Method Theory of Impurities and Defects in III-Nitrides: Vacancies in GaN and Related Materials Nonabrupt Interface Related Exciton Energy Shifts in GaN/AlxGa1-xN Quantum Dots Radiative Recombination in InGaN/GaN Multiple Quantum Wells Impact of Epitaxial Lateral Overgrowth on the Recombination Dynamics in GaN Determined by Time Resolved Micro-Photoluminescence Spectroscopy Structured Ultrafast Carrier Drift Velocity in Photoexcited Zincblende GaN Characterization of Thick GaN Layers Using Guided Optical Waves Polarization Memory in Band Edge Luminescence from Free Standing Gallium Nitride Enhancement of UV-Sensitivity in GaN / GaAs Heterostructures by Si-Doping Resonant Raman Scattering and the Emission Process in Zincblende-InxGa1-xN A Comparison of Aluminum Nitride Freely Nucleated and Seeded on 6H-Silicon Carbide Low Frequency Noise in n-GaN with High Electron Mobility Role of Alloy Fluctuations in InGaN-Based LEDs and Laser Diodes Influence of Annealing Conditions on Dopant Activation of Si+ and Mg+ Implanted GaN Ohmic Contact Formation on Silicon-doped Gallium Nitride Epilayers by Low Temperature Annealing Time-Resolved Photoluminescence Measurements of InGaN Light-Emitting Diodes GaN PIN Photodiodes Grown on Sapphire and SiC Substrates Temperature Dependent Performance of GaN Schottky Diode Rectifiers Monte Carlo Simulation of Gunn Effect and Microwave Power Generation at 240 GHz in n+-n--n-n+ GaN Structures DC and Large-Signal RF Performance of Recessed Gate GaN MESFETs Fabricated by the Photoelectrochemical Etching Process Improved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon Carbide Characterization of AlGaN/GaN HEMT Devices Grown by MBE A Comparative Study of n-p GaN/SiC Heterojunction and p-n 6h-SiC Homojunction Diodes Electric Characteristics of 6H-SiC/GaN Isotype n-n Heterojunctions

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詳細情報

• NII書誌ID(NCID): BA56172059
• ISBN:
  • 0878498540
• 出版国コード: sz
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Zuerich, Switzerland
• ページ数/冊数: 2 v. (lxiv, 1684 p.)
• 大きさ: 25 cm
• 親書誌ID:
  • BA00294222