Group IV elements
Author(s)
Bibliographic Information
Group IV elements
（Landolt-Börnstein Zahlenwerte und Funktionen aus Naturwissenschaften und Technik, Neue Serie / Gesamtherausgabe, K.-H. Hellwege, Group 3 . Condensed matter ; v. 41 . Semiconductors ; subvolume A2a . Impurities and defects in group IV elements,
Springer, c2002
- Other Title
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Landolt-Börnstein Numerical data and functional relationships in science and technology
Available at / 11 libraries
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University of Tsukuba Library, Library on Library and Information Science
403-H51-3-41-A2-α10002304740
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The Institute for Solid State Physics Library. The University of Tokyo.図書室
403:L2:3/41a2α7210195249
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Description and Table of Contents
Description
Vols. III/17a-i and III/22a,b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements, IV-IV and III-V compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well-known experts in the field of semiconductors. To meet the demands of today's scientists and to offer a complete overview on semiconductor data all data available so far are published in the following way: a series of eight subvolumes cover only the supplementary data to vols. III/17 and 22. Enclosed to each subvolume, a CD-ROM contains a complete, revised and update edition of all relevant data. For each individual substance the information is presented in userfriendly documents, containing numerical data, figures and references. Easy access to the documents is provided via substance and property keywords, listing and full text retrieval.
Table of Contents
- Impurities and defects in group IV elements (Diamond: impurities, defects, paramagnetic centers
- Silicon: solubility, segregation and distribution coeff., impurity levels, excited bound states of acceptors and donors, photoluminescence properties, paramagnetic centers, vibrational modes, oxygen-related defects
- Germanium: solubility, segregation, impurity levels, capture and photoionization cross-sections, luminescence of bound excitons, EPR, local vibration modes).
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