:Handbook of silicon semiconductor metrology
著者
書誌事項
:Handbook of silicon semiconductor metrology
Marcel Dekker, c2001
大学図書館所蔵 全6件
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注記
Includes bibliographicl references and index
内容説明・目次
内容説明
Containing more than 300 equations and nearly 500 drawings, photographs, and micrographs,
this reference surveys key areas such as optical measurements and in-line calibration methods. It describes cleanroom-based measurement technology used during the manufacture of silicon integrated circuits and covers model-based, critical dimension, overlay, acoustic film thickness, dopant dose, junction depth, and electrical measurements; particle and defect detection; and flatness following chemical mechanical polishing. Providing examples of well-developed metrology capability, the book focuses on metrology for lithography, transistor, capacitor, and on-chip interconnect process technologies.
目次
- Introduction - silicon semiconductor metrology. Part 1 Transistor fabrication metrology: gate dielectric metrology
- metrology for ion implantation
- MOS device characterization
- carrier illumination characterization of ultra-shallow implants
- modelling of statistical manufacturing sensitivity and of process control and metrology requirements for a 0.18Mum NMOSFET. Part 2 On-chip interconnect metrology: overview of metrology for on-chip interconnect
- metrology for on-chip interconnectdielectrics
- thin film metrology using impulsive stimulated thermal scattering (ISTS)
- metal interconnect process control using picosecond ultrasonics
- sheet resistance measurements of interconnect films
- characterization of low dielectric constantmaterials
- high resolution profilometry for CMP and etch metrology. Part 3 Lithography metrology: critical dimension metrology in the scanning electron microscope
- scanned probe microscope dimensional metrology
- electrical DC metrology and relatedreference materials
- metrology of image placement
- scatterometry for semiconductor metrology. Part 4 Defect detection and characterization: unpatterned wafer defect detection
- particle and defect characterization
- calibration of particle detectionsystems. Part 5 Sensor based metrology: in-situ metrology. Part 6 Data management: metrology data management and information systems. Part 7 Electrical measurement based statistical metrology: statistical metrology. Part 8 Overviews of key measurement andcalibration technology: physics of optical metrology of silicon based semiconductor devices
- UV, VUV and extreme UV spectroscopic reflectometry and ellipsometry
- analysis of thin layer structures by x-ray reflectometry
- ion beam methods
- electronmicroscopy based measurement of feature thickness and calibration of reference materials
- status of lithography at the end of 2000.
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