Microscopy of semiconducting materials 2001 : proceedings of the Royal Microscopical Society Conference, Oxford University, 25-29 March 2001
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Bibliographic Information
Microscopy of semiconducting materials 2001 : proceedings of the Royal Microscopical Society Conference, Oxford University, 25-29 March 2001
（Institute of Physics conference series, no. 169）
Institute of Physics Publishing, c2001
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The Institute for Solid State Physics Library. The University of Tokyo.図書室
428.41:M237210196056
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Note
Includes bibliographical references and index
"SMM XII"
Description and Table of Contents
Description
The Institute of Physics Conference Series is a leading International medium for the rapid publication of proceedings of major conferences and symposia reviewing new developments in physics and related areas. Volumes in the series comprise original refereed papers and are regarded as standard referee works. As such, they are an essential part of major libration collections worldwide.
The twelfth conference on the Microscopy of Semiconducting Materials (MSM) was held at the University of Oxford, 25-29 March 2001. MSM conferences focus on recent international advances in semiconductor studies carried out by all forms of microscopy. The event was organized with scientific sponsorship by the Royal Microscopical Society, The Electron Microscopy and Analysis Group of the Institute of Physics and the Materials Research Society.
With the continual shrinking of electronic device dimensions and accompanying enhancement in device performance, the understanding of semiconductor microscopic properties at the nanoscale (and even at the atomic scale) is increasingly critical for further progress to be achieved. This conference proceedings provides an overview of the latest instrumentation, analysis techniques and state-of-the-art advances in semiconducting materials science for solid state physicists, chemists, and materials scientists.
Table of Contents
- High resolution microscopy and microanalysis
- self-organized and quantum domain structures
- epitaxy - growth phenomena
- epitaxy - wind band-gap nitrides
- processed silicon, substrates and dielectrics
- metalization
- silicides amd contacts
- device studies and specimen preparation
- scanning probe microscopy
- advanced scanning electron and optical microscopy.
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