Nano-Optoelectronics : concepts, physics and devices
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Bibliographic Information
Nano-Optoelectronics : concepts, physics and devices
（Nanoscience and technology）（Physics and astronomy online library）
Springer-Verlag, c2002
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Includes bibliographical references and index
Description and Table of Contents
Description
Traces the quest to use nanostructured media for novel and improved optoelectronic devices. Leading experts - among them Nobel laureate Zhores Alferov - write here about the fundamental concepts behind nano-optoelectronics, the material basis, physical phenomena, device physics and systems.
Table of Contents
I Concepts.- 1 The History of Heterostructure Lasers.- 1.1 Introduction.- 1.2 The DHS Concept and Its Application for Semiconductor Lasers.- 1.3 Quantum Dot Heterostructure Lasers.- 1.4 Future Trends.- References.- 2 Stress-Engineered Quantum Dots: Nature's Way.- 2.1 Introduction.- 2.2 Corrugated Surface Stress and Lattice-Matched Growth: Surface Mechano-Chemistry.- 2.3 Lattice-Mismatch Stress and Growth Front Morphology Evolution.- 2.4 Island Induced Stress Evolution in Capping Layers.- 2.5 Stress-Driven Vertically Self-Organized Growth.- 2.6 Stress-Directed Spatially Selective Quantum Dot Arrays.- 2.7 Conclusion.- References.- II Physics.- 3 Characterization of Structure and Composition of Quantum Dots by Transmission Electron Microscopy.- 3.1 Introduction.- 3.2 TEM Investigations of Quantum Dots.- 3.3 Structure Investigations of Quantum Dots.- 3.4 Conclusion and Outlook.- References.- 4 Scanning Tunneling Microscopy Characterization of InAs Nanostructures Formed on GaAs(001).- 4.1 Introduction.- 4.2 Experimental Technique.- 4.3 InAs Growth on GaAs(001) by MBE.- 4.4 Post-Growth Annealing Effect on InAs Nanostructures.- 4.5 Summary.- References.- 5 Cross-sectional Scanning Tunneling Microscopy at InAs Quantum Dots.- 5.1 Introduction.- 5.2 Contrast Mechanisms in XSTM Experiments.- 5.3 Methods.- 5.4 Results.- 5.5 Discussion.- 5.6 Summary and Outlook.- References.- 6 X-ray Characterization of Group III-Nitrides (Al,In,Ga)N.- 6.1 Introduction.- 6.2 Crystal Structure and Mosaicity.- 6.3 High-Resolution X-ray Diffraction.- 6.4 Biaxial Strain-Stress Relationship.- 6.5 Experimental Results.- 6.6 Conclusions.- References.- 7 Theory of the Electronic and Optical Properties of InGaAs/GaAs Quantum Dots.- 7.1 Introduction.- 7.2 General Properties of Confined States in Quantum Dots.- 7.3 Strain in Buried Quantum Dot Structures.- 7.4 Piezoelectric Symmetry Reduction.- 7.5 Confined Single-Particle States.- 7.6 Dipole Transitions Between Zero-Dimensional States.- 7.7 Few-body Effects in the Strong Confinement Regime.- 7.8 Quantum-Confined Stark Effect.- 7.9 Shape Variation Effects.- 7.10 Reliability of State-of-the-Art Calculations.- 7.11 Conclusions.- References.- 8 Magneto-Tunneling Spectroscopy of Self-Assembled InAs Dots.- 8.1 Introduction.- 8.2 Tunneling Diodes Incorporating Self-assembled Quantum Dots.- 8.3 Magneto-tunneling Spectroscopy.- 8.4 Prospects and Conclusions.- References.- 9 Modulation Spectroscopy and Surface Photovoltage Spectroscopy of Semiconductor Quantum Wires and Quantum Dots.- 9.1 Introduction.- 9.2 Experimental Methods.- 9.3 Lineshape Considerations.- 9.4 Results and Discussion.- 9.5 Summary.- References.- 10 Optical Properties of Self-Organized Quantum Dots.- 10.1 Introduction.- 10.2 Investigated Samples.- 10.3 Excited Exciton Transitions.- 10.4 Exciton-LO-Phonon Coupling.- 10.5 Many-Particle States.- 10.6 Exciton Dynamics.- 10.7 Conclusions.- References.- 11 High Occupancy Effects and Condensation Phenomena in Semiconductor Microcavities and Bulk Semiconductors.- 11.1 Introduction.- 11.2 Experimental Techniques for Microcavity Studies.- 11.3 Non-Resonant Excitation.- 11.4 Resonant Excitation.- 11.5 Comparison of Resonant and Non-Resonant Excitation of Microcavities, Polariton Lasers and Optical Parametric Oscillators.- 11.6 Exciton Condensates and Stimulated Scattering in Direct Gap Bulk Materials and Quantum Wells.- 11.7 The Electron-Hole Liquid in Indirect Gap Semiconductors.- 11.8 Summary.- References.- III Devices.- 12 Theory of Quantum Dot Lasers.- 12.1 Introduction.- 12.2 Basic Theory of Quantum Dot Lasers.- 12.3 Carrier Distribution Function.- 12.4 Threshold Current.- 12.5 Characteristic Temperature.- 12.6 Lasing Spectra.- 12.7 High Frequency Modulation.- 12.8 Inter-Sublevel Lasers.- 12.9 Conclusion and Outlook.- References.- 13 Long-Wavelength InGaAs/GaAs Quantum Dot Lasers.- 13.1 Introduction.- 13.2 Quantum Dots.- 13.3 Growth of Long-Wavelength GaAs-Based Quantum Dots.- 13.4 Edge-Emitting Long-Wavelength Quantum Dot Lasers.- 13.5 Degradation Studies.- 13.6 Long-Wavelength Vertical-Cavity Surface-Emitting QD Lasers.- 13.7 Conclusions.- References.- 14 InP/GalnP Quantum Dot Lasers.- 14.1 Introduction.- 14.2 Single Layers.- 14.3 Stacked Layers.- 14.4 InP/InGaP Quantum Dot Lasers.- References.- 15 High Power Quantum Dot Lasers.- 15.1 High Power Laser Diodes.- 15.2 Quantum Dot Lasers.- 15.3 Characteristics of Ridge Wave-Guide Quantum Dot Lasers.- 15.4 Summary.- References.- 16 Inter-Sublevel Transitions in Quantum Dots and Device Applications.- 16.1 Introduction.- 16.2 Inter-Sublevel Absorption.- 16.3 Inter-Sublevel Emission.- 16.4 Conclusion.- References.- 17 Progress in Growth and Physics of Nitride-Based Quantum Dots.- 17.1 Introduction.- 17.2 Why QDs in GaN-Based Lasers are Important.- 17.3 Electronic States in GaN-Based QDs.- 17.4 Growth and Optical Properties of Self-Assembling InGaN QDs.- 17.5 Growth and Optical Properties of Self-Assembling GaN QDs.- 17.6 Lasing Action of InGaN QD Lasers at Room Temperature.- 17.7 Growth and Optical Properties of Selectively Grown InGaN QDs.- 17.8 Conclusion.- References.- 18 Ultrafast Optical Properties of Quantum Dot Amplifiers.- 18.1 Introduction.- 18.2 Carrier Dynamics in Semiconductor Optical Amplifiers.- 18.3 Heterodyne Pump-Probe Technique.- 18.4 Gain and Refractive Index Dynamics in In(Ga)As QD Amplifiers.- 18.5 Dephasing Time in In(Ga)As QD Amplifiers.- 18.6 Summary.- References.
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