Radiation effects in advanced semiconductor materials and devices

書誌事項

Radiation effects in advanced semiconductor materials and devices

C. Claeys, E. Simoen

(Springer series in materials science, v. 57)

Springer, c2002

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注記

Includes bibliographical references and index

内容説明・目次

内容説明

This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.

目次

Radiation Environments and Component Selection Strategy.- Basic Radiation Damage Mechanisms in Semiconductor Materials and Devices.- Displacement Damage in Group IV Semiconductor Materials.- Radiation Damage in GaAs.- Space Radiation Aspects of Silicon Bipolar Technologies.- Radiation Damage in Silicon MOS Devices.- GaAs Based Field Effect Transistors for Radiation-Hard Applications.- Opto-Electronic Components for Space.- Advanced Semiconductor Materials and Devices - Outlook.

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詳細情報

  • NII書誌ID(NCID)
    BA58661089
  • ISBN
    • 3540433937
  • 出版国コード
    gw
  • タイトル言語コード
    eng
  • 本文言語コード
    eng
  • 出版地
    Berlin
  • ページ数/冊数
    xxii, 401 p.
  • 大きさ
    24 cm
  • 分類
  • 親書誌ID
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