III-nitride semiconductors optical properties I

Author(s)

Bibliographic Information

III-nitride semiconductors optical properties I

edited by M. O. Manasreh and H. X. Jiang

(Optoelectronic properties of semiconductors and superlattices / edited by M. O. Manasreh, vol. 13)

Taylor & Francis Books, c2002

Available at  / 4 libraries

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Note

Includes bibliographical references and index

Description and Table of Contents

Description

The first part of a comprehensive overview of fundamental optical properties of III-nitride semiconductors. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the first of a two part Volume in the series Optoelectronic Properties of Semiconductors and Superlattices.

Table of Contents

Introduction Chapter One: Time-resolved Photoluminescence Studies of III-Nitrides Chapter Two: Time-resolved Raman Studies of Wide bandgap Wurtzite GaN Chapter Three: Optical Properties of InGaN Based III-Nitride Heterostructures Chapter Four: Optical Properties of Homeopitaxial GaN Chapter Five: Physics and Optical Properties of GaN/InGaN Quantum Wells Chapter Six: Characterization of GaN and Related Alloys by Raman Scattering Chapter Seven: Raman Studies of Wurtzite GaN and Related Compounds Chapter Eight: Light Emission from Rare Earth Doped GaN

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Details

  • NCID
    BA59433636
  • ISBN
    • 1560329726
  • Country Code
    us
  • Title Language Code
    eng
  • Text Language Code
    eng
  • Place of Publication
    New York
  • Pages/Volumes
    viii, 417 p.
  • Size
    24 cm
  • Parent Bibliography ID
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