Ultrafast phenomena in semiconductors 2001 : proceedings of the 11th International Symposium on Ultrafast Phenomena in Semiconductors (11-UFPS), held in Vilnius, Lithuania 27-29 August 2001

著者

    • International Symposium on Ultrafast Phenomena in Semiconductors
    • Ašmontas, Steponas
    • Dargys, Adolfas
    • Hartmut G. Roskos

書誌事項

Ultrafast phenomena in semiconductors 2001 : proceedings of the 11th International Symposium on Ultrafast Phenomena in Semiconductors (11-UFPS), held in Vilnius, Lithuania 27-29 August 2001

editors: Steponas Ašmontas, Adolfas Dargys, Hartmut G. Roskos

(Materials science forum, v. 384-385)

Trans Tech Publications, c2002

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注記

Includes bibliographical refernces and index

内容説明・目次

内容説明

This book on ultrafast phenomena in semiconductors covers the electrical, magnetic and optical properties of charge carriers in solids and the interaction of solids and low-dimensional structures with electromagnetic fields and radiation. The book gives particular attention to: (a) Spectroscopic, transport, noise and localization properties of electrons and holes confined in quantum wells and quantum dots, including microdevices, (b) Physical principles of generation and detection of Teraherz electromagnetic radiation, and (c) high-speed electronics and materials. Volume is indexed by Thomson Reuters CPCI-S (WoS).

目次

Preface Tunneling in Quantum Hall Systems Optimization of Heterojunction Devices for High-Frequency and Low-Noise Operation Interaction of Microwave Heated Hot Carriers with Recombination Centers Fine Oscillatory Structure of the Current Passing through Resonant-Tunneling Diodes Carrier Dynamics in Small InAs/GaAs Quantum Dots Weak Localization in SiGe Quantum Wells Doped with Boron Nonequilibrium Spectroscopy of Inter- and Intraband Transitions in Quantum Dot Structures Growth and Characterisation of Mg-Based Low Dimensional Systems for Blue-Green Optoelectronics Quantum and Random Impurity Effects in Ultra-Short MOSFET Magnetotransport in Low Dimensional Honeycomb-Shape GaAs Networks Influence of Structural Properties and of Growth Conditions on Exciton Properties in ZnCdSe/ZnSe Quantum Well Structures Morphology and Photoluminescence of Anodially Grown Porous Layers on Some Ga-V Compounds Spintronics at the Nanostructure Level Time and Energy Scales for Thermal Properties of Nanoparticles Light Emission from Silicon Nanocrystals Study of Photomodulation Dynamics of Excitonic Reflectivity in GaAs/AlAs Quantum Well Heterostructures Photoconductivity of Regular Low Dimensional Arrays of GaAs Wires Optical and Electrical Characteristics of InGaAsP MQW BH DFB Laser Diodes Hot-Electron Microwave Noise in a Two-Dimensional Electron Gas Direct Measurements of Energy Relaxation Times in Two-Dimensional Structures under Quasi-Equilibrium Conditions Energy Relaxation Time and Microwave Noise in InAs/AlSb/GaSb/GaAs Heterostructures Kinetic Approach to Fluctuation Phenomena: A Historical Outline Investigation of Degenerate Carrier Heating in Tunneling GaAs p-n Junction Dynamic Negative Differential Conductivity due to Electron Transit Time Effects Influence of Hole Recombination Rate on Microwave Detection in Compensated Germanium CO2 Laser Induced Hot Carrier Photoeffect in HgCdTe Evaluation of High-Speed Bipolar Transistors for Application to Chaotic Colpitts Oscillator RF Noise in a Short-Channel n-MOSFET: A Monte Carlo Study Optically Controlled Fast Switching of Microstrip Resonator Quantum-Confined Impurities as Single-Electron Quantum Dots: Application in Tereherz Emitters Semiconductor Technology for THz Integration Resonant Acceptor States and Stimulated THz Emission in Semiconductors and Semiconductor Structures Low-Voltage Lasing of p-Ge under Uniaxial Stress GHz-THz Detection by Asymmetrically-Shaped GaAs: Bulk Material versus Nanostructures Terahertz Semiconductor Laser Structures Comparative Study of Terahertz Generation in Wide Band Gap Bulk Semiconductors Injection Lasers Based on Intraband Carrier Transitions InN Submicron Structure for Generation at Terahertz Frequencies Theoretical Design and Analysis of SiC n++pn-n+nn++-Diodes for 400 GHz Microwave Power Generation Influence of Uniaxial Stress on the Polarization of Spontaneous Emission from p-Ge Generation and Frequency Transformation of High-Frequency Radiation in Bi-Modal Electrodynamic System Filled by Asymmetric Multilayer Heterostructure Ultrafast Goes Local Ultrafast & Highly Efficient Resonant Cavity Enhanced Photodiodes Ultrafast Risetime GaAs Photoconductive Switches Label-Free Probing of the Binding State of DNA by Time-Domain Terahertz Sensing Optimization of Ultrafast Optical Transitions Using Genetic Algorithm Stimulated Emission in InGaN/GaN Quantum Wells Ultrafast Optical Nonlinearities in GaAs Crystals Driven by a Strong Terahertz-Wave Determining the Antiferromagnetic Resonance Frequency in Semimagnetic Semiconductors by Means of Surface Polaritons Charge Carrier Photogeneration in Conjugated Polymer Graded-Gap AlxGa1-xAs X-Ray Detectors with Fast Photovoltaic Response Mechanism of Generation of Defects in a Semiconductor by Pulse Laser Radiation Manganite Based Strong Magnetic Field Sensors Used for Magnetocumulative Generators Features of Charge Carrier Transport in c-Si:H/a-Si:H Superlattices Light Reflection Band between the Zeeman Lines in Diluted Magnetic Semiconductors Fast Electrical and Optical Pulse Induced Resistance Change in Thin Manganite Films Electric Properties and Irradiation of a Pulse-Laser-Excited Miniature Magnetic-Dipole Antenna Defects, their Interaction and Modification by Irradiation in Semi-Insulating GaAs Carrier Traps and Effect of Oxygen in MEH-PPV Polymer Diodes Role of Shallow Electron Traps in the Fast Transient Optical Phenomena of Alkali Halide Crystals Active Media for Optical Data Processing Closing Remarks

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詳細情報

  • NII書誌ID(NCID)
    BA61029713
  • ISBN
    • 0878498907
  • 出版国コード
    uk
  • タイトル言語コード
    eng
  • 本文言語コード
    eng
  • 出版地
    Zurich-Uetikon, Switzerland
  • ページ数/冊数
    341 p.
  • 大きさ
    25 cm
  • 親書誌ID
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