Modelling of transport phenomena in crystal growth
著者
書誌事項
Modelling of transport phenomena in crystal growth
（International series on developments in heat transfer, 6）
WIT Press, c2000
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注記
Includes bibliographical references
内容説明・目次
内容説明
The large crystals of semiconducting and superconducting materials used for electronic and optical devices are usually grown from the melt by Czochralski or Bridgman method and their quality is significantly affected by the melt flow and related heat and mass transfer. Recent intensive research activities in this area covering crystal growth in microgravity, crystal growth of superconducting materials, crystal growth in high pressure, the commercial development of pullers that can produce crystals with large diameters etc. have substantially raised the expectation for numerous new practical applications. An addition to the existing literature, this book represents the collective work of experts from five countries on the melt flow and related heat and mass transfer in the crystal growth system.
目次
- Introduction to crystal growth processes from the melt
- Back-diffusion phenomenon during the crystal growth by the Bridgman method
- Numerical stimulation of crystal growth by the vertical Bridgman method
- Numerical modelling of crystal growth of binary compound semiconductors
- Crystal growth by travelling heater method in microgravity
- Convective instability in Czochralski crystal growth system
- Effect of magnetic field in Czochralski silicon crystal growth
- Modelling of Czochralski crystal growth in turbulent flow regime
- Transport phenomena during growth of superconducting materials by Czochralski method
- Modeling of high pressure liquid-encapsulated Czochralski crystal growth processes.
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