Low-dimensional nitride semiconductors

Author(s)

    • Gil, Bernard

Bibliographic Information

Low-dimensional nitride semiconductors

edited by Bernard Gil

(Series on semiconductor science and technology, 9)(Oxford science publications)

Oxford University Press, c2002

Available at  / 5 libraries

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Note

Includes bibliographical references and index

Description and Table of Contents

Description

Optoelectronics and electronics of the years to come are likely to change dramatically. Most of the outdoor lighting systems will be replaced by light-emitting diodes that operate in the whole visible part of the electromagnetic spectrum. Transistors operating at high frequency and with high power are under development and likely to hit the market very rapidly. Compact solid state lasers that operate in the near-ultraviolet range are going to be utilized for such widely used applications as read-write tasks in printers and CD drives. Ultraviolet detectors will be used at a wide scale for many applications, ranging from flame detectors to medical instruments. This book concerns itself with the questions why nitride semiconductors are so promising over such a wide range of applications, what the current issues are in the research laboratories, and what the prospects of new electronic devices are in the dawn of the twenty first century.

Table of Contents

  • 1. Gallium nitride or The history of a scientific explosion driven by applications and markets
  • 2. Nitrides as seen by a theorist
  • 3. The homoepitaxial challenge for low-dimensional nitrides
  • 4. HVPE - GaN quasi-substrates for nitride device structures
  • 5. Growth optimization of low-dimensional nitrides by metalorganic vapor phase epitaxy and dislocation control
  • 6. The growth of low-dimensional nitrides by molecular beam epitaxy
  • 7. Topological defects and low-dimensional nitride layers
  • 8. Excitons in GaN-based low-dimensional systems
  • 9. Indium gallium nitride
  • 10. The optical properties of InGaN-based quantum wells and quantum dots
  • 11. Electron-phonon interactions in GaN and its low-dimensional structures
  • 12. Low-dimensional nitrides: A laboratory for ultrafast physics
  • 13. Opto-electronic devices based on low-dimensional nitride heterostructures
  • 14. GaN-based modulation doped FETs
  • 15. Mixed III-V-N semiconductors: A challenge for tomorrow?

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Details

  • NCID
    BA62530539
  • ISBN
    • 019850974X
  • Country Code
    us
  • Title Language Code
    eng
  • Text Language Code
    eng
  • Place of Publication
    New York
  • Pages/Volumes
    xv, 467 p., [4] p. of plates
  • Size
    24 cm
  • Subject Headings
  • Parent Bibliography ID
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