Silicon-germanium carbon alloy
著者
書誌事項
Silicon-germanium carbon alloy
（Optoelectronic properties of semiconductors and superlattices / edited by M. O. Manasreh, v. 15）
Taylor & Francis, 2002
- タイトル別名
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Silicon-germanium carbon alloys : growth, properties and applications
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注記
Includes bibliographical references and index
内容説明・目次
内容説明
Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor.
Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers.
目次
1. Band Alignments and Band Gaps in Si 1-x-yGexCy/Si (001) Structures
2. Synthesis and Characterization of Compounds and Alloys in the Ge-C, Si-C, and Si-Ge-C Systems
3. Substitutional Carbon Incorporation and Electronic Characterization of Si1-ycy and Si1-x-yGexCy/Si Heterojunctions
4. Electron Transport in Surface-Channel Strained-Si Mosfets and Modulation-Doped Fets
5. The Effects of Carbon on the Optical and Structural Properties of SiGeC Alloys
6. Microstructure and Electronic Structure of Strain-Relaxed SiGe Films
7. Monte-Carlo Investigations of Group-IV Alloys Containing Carbon
8. Theory of Strain and Electronic Structure of Si1-yCy and Si1-x-yGexCy Alloys
9. Microstructural Development and Raman Studies of Ge-C and Ge-Si-C Alloys Grown by Molecular Beam Epitaxy on Si and Ge Substrates
10. Suppression of Boron Diffusion by Carbon: A New Route for Advanced Heterojunction Bipolar Transistors
11. Raman Characterization of Si/Si1-xGex Epitaxial Structures
12. Optical Properties and Band Structure of Unstrained and Strained Si1-xGex and Si1-x-yGexCy Alloys
13. Photoluminescence and Transport Measurements in Pseudomorphic Si1-yCy and Si1-x-yGeyCy Layers
14. Temperature Dependence of the Optical Spectra of Si1-xGex Alloys
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