Crystalline oxide-silicon heterostructures and oxide optoelectronics : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.
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Bibliographic Information
Crystalline oxide-silicon heterostructures and oxide optoelectronics : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.
（Materials Research Society symposium proceedings, v. 747）
Materials Research Society, c2003
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Includes bibliographical references and indexes
Description and Table of Contents
Description
This book contains the proceedings of two symposia held at the 2002 MRS Fall Meeting in Boston. Papers from Symposium T, Crystalline Oxides on Semiconductors, bring together experts from different technology areas - high-k gate dielectrics, novel memories, and ferroelectrics, for example - to examine commonality among the fields. These papers offer an overview of the field, highlight interesting experimental results and device ideas, and feature innovative theoretical approaches to understanding these systems. Symposium V, Interfacial Issues for Oxide-Based Electronics, covers a wide range of topics involving the interfaces between electro-optical oxide layers and other materials. Overall, it is clear that a new generation of materials and heterostructures has been enabled by the increasing control of interfacial phenomena. Topics include: epitaxial oxide-silicon heterostructures; ferroelectric thin films on silicon; theory and modeling; crystalline oxides for gate dielectrics; transparent conducting oxides; transparent conducting oxides and oxide growth and properties; field effect devices and gate dielectrics; ferroelectrics, capacitors and sensors; organic devices and interfacial growth issues.
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