Novel devices and atom manipulation
著者
書誌事項
Novel devices and atom manipulation
（Springer series in optical sciences, v. 89 . Progress in nano-electro-optics ; 2）（Physics and astronomy online library）
Springer, c2004
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注記
Includes bibliographical references and index
内容説明・目次
内容説明
This second and concluding volume of Progress in Nano-Electro-Optics focuses on applications to novel devices and atom manipulation. Part II addresses the latest developments in nano-optical techniques, forming a valuable resource for engineers and scientists working in the field of nano-electro-optics.
目次
Classical Theory on Electromagnetic Near Field.- 1 Introduction.- 1.1 Studies of Pioneers.- 1.2 Purposes of This Chapter.- 1.3 Overview of This Chapter.- 2 Definition of Near Field and Far Field.- 2.1 A Naive Example of Super-Resolution.- 2.2 Retardation Effect as Wavenumber Dependence.- 2.3 Examination on Three Cases.- 2.4 Diffraction Limit in Terms of Retardation Effect.- 2.5 Definition of Near Field and Far Field.- 3 Boundary Scattering Formulation with Scalar Potential.- 3.1 Quasistatic Picture under Near-Field Condition.- 3.2 Poisson's Equation with Boundary Charge Density.- 3.3 Intuitive Picture of EM Near Field under Near-Field Condition.- 3.4 Notations Concerning Steep Interface.- 3.5 Boundary Value Problem for Scalar Potential.- 3.6 Boundary Scattering Problem Equivalent to Boundary Value Problem.- 3.7 Integral Equation for Source and Perturbative Treatment of MBC.- 3.8 Application to a Spherical System: Analytical Treatment.- 3.9 Application to a Spherical System: Numerical Treatment.- 3.10 Application to a Low Symmetric System.- 3.11 Summary.- 4 Boundary Scattering Formulation with Dual EM Potential.- 4.1 Dual EM Potential as Minimum Degree of Freedom.- 4.2 Wave Equation for Dual Vector Potential.- 4.3 Boundary Value Problem for Dual EM Potential.- 4.4 Boundary Scattering Problem Equivalent to the Boundary Value Problem.- 4.5 Integral Equation for Source and Perturbative Treatment of MBCs.- 4.6 Summary.- 5 Application of Boundary Scattering Formulation with Dual EM Potential to EM Near-Field Problem.- 5.1 Boundary Effect and Retardation Effect.- 5.2 Intuitive Picture Based on Dual Ampere Law under Near-field Condition.- 5.3 Application to a Spherical System: Numerical Treatment.- 5.4 Correction due to Retardation Effect.- 5.5 Summary.- 6 Summary and Remaining Problems.- 7 Theoretical Formula for Intensity of Far Field, Near Field and Signal in NOM.- 7.1 Field Intensity for Far/Near Field.- 7.2 Theoretical Formula for the Signal Intensity in NOM.- 8 Mathematical Basis of Boundary Scattering Formulation.- 8.1 Boundary Charge Density and Boundary Condition.- 8.2 Boundary Magnetic Current Density and Boundary Condition.- 9 Green's Function and Delta Function in Vector Field Analysis.- 9.1 Vector Helmholtz Equation.- 9.2 Decomposition into Longitudinal and Transversal Components.- References.- Excitonic Polaritons in Quantum-Confined Systems and Their Applications to Optoelectronic Devices.- 1 Introduction.- 2 Fundamental Aspects of Excitonic Polaritons Propagating in Quantum-Confined Systems.- 2.1 The Concept of the Excitonic Polariton.- 2.2 Excitonic Polaritons in GaAs Quantum-Well Waveguides: Experimental Observations.- 2.3 Excitonic Polaritons in GaAs Quantum-Well Waveguides: Theoretical Calculations.- 2.4 Electric-Field-Induced Phase Modulation of Excitonic Polaritons in Quantum-Well Waveguides.- 2.5 Temperature Dependence of the Phase Modulation due to an Electric Field.- 2.6 Cavity Effect of Excitonic Polaritons in Quantum-Well Waveguides.- 3 Applications to Optoelectronic Devices.- 3.1 Mach-Zehnder-Type Modulators.- 3.2 Directional-Coupler-Type Switches.- 3.3 Spatial Confinement of Electromagnetic Field by an Excitonic Polariton Effect: Theoretical Considerations.- 3.4 Nanometer-Scale Switches.- 4 Summary and Future Prospects.- References.- Nano-Optical Imaging and Spectroscopy of Single Semiconductor Quantum Constituents.- 1 Introduction.- 2 General Description of NSOM.- 3 Design, Fabrication, and Evaluation of NSOM Aperture Probes.- 3.1 Basic Process of Aperture-Probe Fabrication.- 3.2 Tapered Structure and Optical Throughput.- 3.3 Simulation-Based Design of a Tapered Structure.- 3.4 Fabrication of a Double-Tapered Aperture Probe.- 3.5 Evaluation of Transmission Efficiency and Collection Efficiency.- 3.6 Evaluation of Spatial Resolution with Single Quantum Dots.- 4 Super-Resolution in Single-Molecule Detection.- 5 Single Quantum-Dot Spectroscopy.- 5.1 Homogeneous Linewidth and Carrier-Phonon Interaction.- 5.2 Homogeneous Linewidth and Carrier-Carrier Interaction.- 6 Real-Space Mapping of Exciton Wavefunction Confined in a QD.- 7 Carrier Localization in Cluster States in GaNAs.- 8 Perspectives.- References.- Atom Deflector and Detector with Near-Field Light.- 1 Introduction.- 2 Slit-Type Deflector.- 2.1 Principle.- 2.2 Fabrication Process.- 2.3 Measurement of Light Distribution.- 2.4 Estimation of Deflection Angle.- 3 Slit-Type Detector.- 3.1 Principle.- 3.2 Fabrication Process.- 3.3 Measurement of Light Distribution.- 3.4 Two-Step Photoionization with Two-Color Near-Field Lights.- 3.5 Blue-Fluorescence Spectroscopy with Two-Color Near-Field Lights.- 4 Guiding Cold Atoms through Hollow Light with Sisyphus Cooling.- 4.1 Generation of Hollow Light.- 4.2 Sisyphus Cooling in Hollow Light.- 4.3 Experiment.- 4.4 Estimation of Atom Flux.- 5 Outlook.- References.
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