Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden

著者

• European Conference on Silicon Carbide and Related Materials

書誌事項

Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden

edited by Peder Bergman, Erik Janzén

（Materials science forum, v. 433-436）

Trans Tech Publications, c2003

内容説明・目次

内容説明

Volume is indexed by Thomson Reuters CPCI-S (WoS). Wide-bandgap semiconductors such as SiC, III-V nitrides and related compounds are attracting rapidly increasing attention due to their other, very interesting, physical properties which are often superior in many ways to those of conventional semiconductors. Steady improvements in crystal quality, and improved knowledge concerning their physical properties, are leading to rapid developments in high-power, high-temperature, high-frequency electronics and blue-light emitters.

目次

Properties of Free-Standing 3C-SiC Monocrystals Grown on Undulant-Si(001) Substrate Investigation of Mass Transport during SiC PVT Growth Using Digital X-Ray Imaging, 13C Labeling of Source Material and Numerical Modeling Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method On the Early Stages of Sublimation Growth of 4H-SiC Using 8 Degrees Off-Oriented Substrates Growth of High Quality p-Type 4H-SiC Substrates by HTCVD Towards a Continuous Feeding of the PVT Growth Process: an Experimental Investigation Growth of Faceted Free-Spreading SiC Bulk Crystals by Sublimation HTCVD Grown Semi-Insulating SiC Substrates Sublimation-Grown Semi-Insulating SiC for High Frequency Devices Defects in Semi-Insulating SiC Substrates Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC Crystals Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiC Growth of Phosphorus-Doped 6H-SiC Single Crystals by the Modified Lely Method Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient Uniformization of Radial Temperature Gradient in Sublimation Growth of SiC Effect of Ambient on 4H-SiC Bulk Crystals Grown by Sublimation Continuous Growth of SiC Single Crystal from Ultrafine Particle Precursor Defect Reduction in SiC Crystals Grown by the Modified Lely Method A Study of HTCVD Renewing of the SiC Polycrystalline Source during the PVT Process Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport Morphological Features of Sublimation-Grown 4H-SiC Layers Graphitization of the Seeding Surface during the Heating Stage of SiC PVT Bulk Growth Heat Transfer Modeling of a New Crystal Growth Process Optimization of Chamber Design and Rapid Thermal Processing Regimes for SiC Substrates by Temperature and Thermal Stress Distribution Crystal Interface Shape Simulation during SiC Sublimation Growth Growth at High Rates and Characterization of Bulk 3C-SiC Material Comparison between Ar and N2 for High-Temperature Treatment of 4H-SiC Substrates SiC Epitaxy on Non-Standard Surfaces 4H-SiC Epitaxial Growth for High-Power Devices Predictions of Nitrogen Doping in SiC Epitaxial Layers Experiment and Modeling of the Large-Area Etching and Growth Rate of Epitaxial SiC Chemical Vapor Deposition of n-Type SiC Epitaxial Layers Using Phosphine and Nitrogen as the Precursors Wide-Area Homoepitaxial Growth of 6H-SiC on Nearly On-Axis (0001) by Chemical Vapor Deposition Nitrogen Delta Doping in 4H-SiC Epilayers Temperature Effects in SiC Epitaxial Growth Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVD Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System Origin and Behaviour of Deep Levels in Sublimation Growth of 4H-SiC Layers Vacancies in As-Grown and Electron-Irradiated 4H-SiC Epilayers Investigated by Positron Annihilation Computational Modeling for the Development of CVD SiC Epitaxial Growth Processes Is Al-Si a Good Melt for the Low-Temperature LPE of 4H-SiC? Uniformity Improvement in SiC Epitaxial Growth by Horizontal Hot-Wall CVD Features of Sublimation Growth on Porous SiC Substrates: Characteristics and Properties of Porous and Epitaxial Layers The Effect of Thermal Gradients on SiC Wafers Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes Epitaxial Growth of 6H-SiC by a Vapor Liquid Solid Method Growth of p-Type SiC Layer by Sublimation Epitaxy Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy Growth of SiC Hetero-Epitaxial Films by Pulsed-Laser Deposition -Laser Frequency Dependence- Thin Film SiC Epitaxy on Si(111) from Acetylene Precursor Preparation of SiC/Si(111) Hetero-Epitaxial Junctions by PLD and Crystallographic and l-V Characterization Hetero-Epitaxial Growth of 3C-SiC on Carbonized Silicon Substrates High-Resolution XRD Investigations of the Strain Reduction in 3C-SiC Thin Films Grown on Si (111) Substrates SiC Synthesis by Fullerene Free Jets on Si(111) at Low Temperatures Production of 8-Inch SiC Wafer by Hybridization of Single and Polycrystalline SiC Wafers Synchrotron White Beam X-Ray Topography and High Resolution Triple Axis X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Devices Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing Lattice Dynamics of 4H-SiC by Inelastic X-Ray Scattering Conditions for Micropipe Dissociation by 4H-SiC CVD Growth Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy Imaging Doping-Related Strain in n-Doped 4H-SiC Crystals Stacking Faults in 3C-SiC Relax Lattice Deformation Characteristics of Planar Defects in Shallow Trenches Related to the Presence of Micropipes Orientation-Dependent Defect Formation in Silicon Carbide Epitaxial Layers Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC High-Accuracy Lattice Constant Measurements of Electron-Irradiated 6H-SiC Single Crystals Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation Dynamics of 4H-SiC Plasticity Time-Resolved Photoluminescence of Deep Centers in Semi-Insulating 4H-SiC Identification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H SiC by Photoluminescence Spectroscopy Photoluminescence Up-Conversion Processes in SiC New Photoluminescence Features in 4H-SiC Induced by Hydrogenation Analysis of Extended Defects in 6H-SiC Using Photoluminescence and Light Beam Induced Current Spectroscopy Donor-Acceptor Pair Luminescence in 4H-SiC Doped with Nitrogen and Aluminum Raman Excitation Profiles of 3C-, 4H-, 6H-, 15R- and 21R-SiC Infrared Optical Properties of 3C, 4H and 6H Silicon Carbide Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals Determination of Exciton Capture Cross-Sections of Neutral Nitrogen Donor on Cubic and Hexagonal Sites in n-Type (N) 6H-SiC Dll PL Intensity Dependence on Dose, Implantation Temperature and Implanted Species in 4H- and 6H-SiC Application of UV Scanning Photoluminescence Spectroscopy for Minority Carrier Lifetime Mapping Raman Imaging Analysis of SiC Wafers Simple Method for Mapping Optical Defects in Insulating Silicon Carbide Wafers Non-Destructive SiC Wafer Evaluation Based on an Optical Stress Technique Electrical and Optical Characterization of SiC Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy Majority Traps Observed in H+- or He+-Implanted Al-Doped 6H-SiC by Admittance and Deep Level Transient Spectroscopy On the Unusual Nature of a DLTS-Detected Defect in Bulk n-Type 6H-SiC High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers Modeling of Lattice Heat Conductivity and Thermopower in SiC Considering the Four-Phonon Scattering Processes Improved p-Type Conductivity in Heavily Al-Doped SiC by Ion-Beam-Induced Nano-Crystallization Transport Investigation of Low-Nitrogen-Doped 6H-SiC Ion-Implantation vs. In Situ Doping From Transport Measurements to Infrared Reflectance Spectra of n-Type Doped 4H-SiC Layer Stacks Impact of Phonon Drag Effect on Seebeck Coefficient in p-6H-SiC: Experiment and Simulation Parameters of Electron-Hole Scattering in Silicon Carbide Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy Electrical Characterization of Ni/Porous SiC/n-SiC Structure Correlation between Electrical and Optical Mapping of Boron Related Complexes in 4H-SiC Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region Mapping on Bulk and Epitaxy Layer 4H-SiC Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates Electron-Induced Damage Effects in 4H-SiC Schottky Diodes Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation Real Relationship between Acceptor Density and Hole Concentration in Al-Implanted 4H-SiC Electrical Characteristics of Plasma-Enhanced Chemical Vapor Deposited Silicon Carbide Thin Films Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky Diodes Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers Deep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD Parameters Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions Identification and Annealing of Common Intrinsic Defect Centers Polytype-Dependent Vacancy Annealing Studied by Positron Annihilation Nitrogen-Vacancy Complexes in SiC - Final Annealing Products of the Silicon Vacancy? A Deep Erbium-Related Bandgap State in 4H Silicon Carbide Theoretical Study of Antisite Aggregation in -SiC EPR Studies of Interface Defects in n-Type 6H-SiC/SiO2 Using Porous SiC Electrical and Multifrequency EPR Study of Nitrogen and Carbon Antisite-Related Native Defect in n-Type As-Grown 4H-SiC Phosphorus-Related Shallow and Deep Defects in 6H-SiC EPR Study of Electron Irradiation-Induced Defects in Semi-Insulating SiC:V Calculation of Hyperfine Constants of Defects in 4H-SiC A Simple Model of 3d Impurities in Cubic Silicon Carbide Effective Mass of Electrons in Quantum-Well-Like Stacking-Fault Gap States in Silicon Carbide A Shallow Acceptor Complex in 4H-SiC: AlSiNCAlSi Electronic Structure of Twin Boundaries in 3C-SiC, Si and Diamond Electronic Properties of Stacking Faults in 15R-SiC A Cause for SiC/SiO2 Interface States: the Site Selection of Oxygen in SiC Angle-Resolved Studies of SiO2/SiC Samples Positron Annihilation Studies of Defects at the SiO2/SiC Interface A Study of the Shallow Electron Traps at the 4H-SiC/SiO2 Interface Traps at the Interface of 3C-SiC/SiO2-MOS-Structures Study of the Wet Re-Oxidation Annealing of SiO2/4H-SiC (0001) Interface Properties by AR-XPS Measurements Structural Defects at SiO2/SiC Interfaces Detected by Positron Annihilation Reduction of Interface Trapped Density of SiO2/4H-SiC by Oxidation of Atomic Oxygen High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000-1) Face Using H2 Post-Oxidation Annealing Cubic SiC Surface Structure Studied by X-Ray Diffraction Adsorption of Toluene on Si(100) from First Principles Atomic Structure of Si-Rich 3C-SiC(001)-(3x2): a Photoelectron Diffraction Study Effects of Initial Nitridation on the Characteristics of SiC-SiO2 Interfaces Ag Growth on 3C-SiC(001) c(2x2) C-Terminated and c(4x2) Si-Terminated Surfaces Modelling the Formation of Nano-Sized SiC on Si Nanostructure Formation on a Surface of 6H-SiC by Laser Radiation Theoretical Investigation of Adsorption of N-Containing Species at SiC(0001) Surfaces Electrical Activation of Ion-Implanted Nitrogen and Aluminum in 4H-SiC by Excimer Laser Annealing Surface Properties and Electrical Characteristics of Rapid Thermal Annealed 4H-SiC Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11-20) Face Damage Relaxation Pre-Activation Anneal in Al-Implanted SiC Electrical Characterization of Ion-Implanted n+/p 6H-SiC Diodes High-Sensitivity Ion Beam Analytical Method for Studying Ion-Implanted SiC SiC Delta-Doped-Layer Structures and DACFET Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers Vacancy-Type Defect Distributions of 11B-, 14N- and 27Al-Implanted 4H-SiC Studied by Positron Annihilation Spectroscopy Damage Distributions Induced by Channeling Implantation of Nitrogen into 6H Silicon Carbide First-Principles Studies of N and P Dopant Interactions in SiC: Implications for Co-Doping Quantitative Evaluation of Implantation Damage and Damage Recovery after Room Temperature Ion-Implantation of N+ and P+ Ions in 6H-SiC Porous SiC: New Applications through In- and Out- Dopant Diffusion Co-Formation of Gate Electrode and Ohmic Contacts in SiC Power MOSFETs Electrochemical Etching of n-Type 6H-SiC Using Aqueous KOH Solutions Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data Low-Frequency Noise Measurements as a Quality Indicator for Ohmic Contacts to n-GaN Thermal Stability of Pd Schottky Contacts to p-Type 6H-SiC Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement The Effect of Plasma Etching on the Electrical Characteristics of 4H-SiC Schottky Diodes Use of Laser Interferometry and Optical Emission Spectroscopy for Monitoring the Reactive Ion Etching of 6H - and 4H-SiC Diffusion-Welded Al Contacts to p-Type SiC Thermal Etching of 6H-SiC (11-20) Substrate Surface Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission Characteristics of Ni Schottky Contacts on Compensated 4H-SiC Layers Pd-Based Ohmic Contacts to LPE 4H-SiC with Improved Thermal Stability Surface Structure of Electrochemically Etched -SiC Substrates Schottky-Ohmic Transition in Nickel Silicide/SiC System: Is it Really a Solved Problem? Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process Influence of Material Properties on Wide-Bandgap Microwave Power Device Characteristics A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates Performance of Silicon Carbide Microwave MESFETs Using a Thin p-Doped Buffer Layer RF Characteristics of Short-Channel SiC MESFETs Passivation Effect on Channel Recessed 4H-SiC MESFETs 4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC Modelling of Radiation Response of p-Channel SiC MOSFETs Influence of Depletion Region Length on Specific On-Resistance in SiC MOSFET 4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs Optimisation of a 4H-SiC Enhancement Mode Power JFET Electro-Thermal Simulations and Measurement of Silicon Carbide Bipolar Transistors Power Amplification in UHF Band Using SiC RF Power BJTs Demonstration of Monolithic Darlington Transistors in 4H-SiC High-Voltage Modular Switch Based on SiC VJFETs - First Results for a Fast 4.5kV/1.2 Configuration Design and Technology Considerations for a RF BJT in SiC Analysis of Unipolar and Bipolar Cascoded Switches with MOS Gate SiC Power Devices: How to be Competitive towards Si-Based Solutions? SiC Power Devices on QUASIC and SiCOI Smart-Cut (R) Substrates: First Demonstrations Low Power Dissipation SiC Schottky Rectifiers with a Dual-Metal Planar Structure Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier Diodes Comparison between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process Characterization of the Forward Conduction of 4H-SiC Planar Junction Diode The Electrothermal Behavior of 4H-SiC Schottky Diodes at Forward Bias Considering Single Pulse and Pulsed Current Operation 1kV 4H-SiC JBS Rectifiers Fabricated Using an AlN Capped Anneal Simulations of High-Voltage 4H-SiC p+nn+ Diodes Using a Transient Model for the Deep Boron Level Optical Switch-On of Silicon Carbide Thyristor Reverse Current Recovery in 4H-SiC Diodes with n- and p-Base SiC Lateral Super-Junction Diodes Fabricated by Epitaxial Growth OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension 4H-SiC pn Diode Grown by LPE Method for High-Power Applications Characterization of a 4H-SiC High Power Density Controlled Current Limiter Forward Dynamic IV Characteristics in Epitaxial and Implanted SiC PiN Power Diodes Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination Fabrication and Characterisation of High-Voltage SiC-Thyristors SiC Device Limitation Breakthrough with Novel Floating Junction Structure on 4H-SiC Novel Buried Field Rings Edge Termination for 4H-SiC High-Voltage Devices To Be ''Snappy'' or Not - a Comparison of the Transient Behaviours of Bipolar SiC-Diodes Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC Insight into the Degradation Phenomenon in SiC Devices from Ab Initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults Properties of Different Stacking Faults that Cause Degradation in SiC PiN Diodes Impact of SiC Structural Defects on the Degradation Phenomenon of Bipolar SiC Devices Stacking Fault - Stacking Fault Interactions and Cubic Inclusions in 6H-SiC: an Ab Initio Study Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11-20) Face Reliability of 4H-SiC p-n Diodes on LPE Grown Layers In Situ Studies of Structural Instability in Operating 4H-SiC PiN Diodes SEM Visibility of Stacking Faults in 4H-Silicon Carbide Epitaxial and Implanted Layers SiC X-Ray Detectors for Spectroscopy and Imaging over a Wide Temperature Range Effects of Nitrogen Radical Irradiation on Performance of SiC MOSFETs New Tunnel Schottky SiC Devices Using Mixed Conduction Ceramics MISiCFET Chemical Sensors for Applications in Exhaust Gases and Flue Gases Radiation Hardness of Silicon Carbide NO Gas Detection at High Temperature Using Thin-Pt 4H-SiC and 6H-SiC Schottky Diodes Improved Understanding and Optimization of SiC Nearly Solar Blind UV Photodiodes p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation Effect of Tantalum in Sublimation Growth of Aluminum Nitride Growth of AlN Bulk Crystals by Sublimation Sandwich Method Seeded PVT Growth of Aluminum Nitride on Silicon Carbide Growth and Characterization of Epitaxial Wurtzite Al1-xInxN Thin Films Deposited by UHV Reactive Dual DC Magnetron Sputtering Implementation of Hot-Wall MOCVD to the Growth of High-Quality GaN on SiC Properties of AlN Layers Grown by Sublimation Epitaxy Microstructure of GaN Layers Grown onto (001) and (111) GaAs Substrates by Molecular Beam Epitaxy Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates

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詳細情報

• NII書誌ID(NCID): BA63356721
• ISBN:
  • 0878499202
• 出版国コード: sz
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Zuerich, Switzerland
• ページ数/冊数: xlvi, 1006 p.
• 大きさ: 25 cm
• 親書誌ID:
  • BA00294222