Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden
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書誌事項
Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden
(Materials science forum, v. 433-436)
Trans Tech Publications, c2003
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内容説明・目次
内容説明
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Wide-bandgap semiconductors such as SiC, III-V nitrides and related compounds are attracting rapidly increasing attention due to their other, very interesting, physical properties which are often superior in many ways to those of conventional semiconductors. Steady improvements in crystal quality, and improved knowledge concerning their physical properties, are leading to rapid developments in high-power, high-temperature, high-frequency electronics and blue-light emitters.
目次
Properties of Free-Standing 3C-SiC Monocrystals Grown on Undulant-Si(001) Substrate
Investigation of Mass Transport during SiC PVT Growth Using Digital X-Ray Imaging, 13C Labeling of Source Material and Numerical Modeling
Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method
On the Early Stages of Sublimation Growth of 4H-SiC Using 8 Degrees Off-Oriented Substrates
Growth of High Quality p-Type 4H-SiC Substrates by HTCVD
Towards a Continuous Feeding of the PVT Growth Process: an Experimental Investigation
Growth of Faceted Free-Spreading SiC Bulk Crystals by Sublimation
HTCVD Grown Semi-Insulating SiC Substrates
Sublimation-Grown Semi-Insulating SiC for High Frequency Devices
Defects in Semi-Insulating SiC Substrates
Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth
PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC Crystals
Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiC
Growth of Phosphorus-Doped 6H-SiC Single Crystals by the Modified Lely Method
Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient
Uniformization of Radial Temperature Gradient in Sublimation Growth of SiC
Effect of Ambient on 4H-SiC Bulk Crystals Grown by Sublimation
Continuous Growth of SiC Single Crystal from Ultrafine Particle Precursor
Defect Reduction in SiC Crystals Grown by the Modified Lely Method
A Study of HTCVD Renewing of the SiC Polycrystalline Source during the PVT Process
Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport
Morphological Features of Sublimation-Grown 4H-SiC Layers
Graphitization of the Seeding Surface during the Heating Stage of SiC PVT Bulk Growth
Heat Transfer Modeling of a New Crystal Growth Process
Optimization of Chamber Design and Rapid Thermal Processing Regimes for SiC Substrates by Temperature and Thermal Stress Distribution
Crystal Interface Shape Simulation during SiC Sublimation Growth
Growth at High Rates and Characterization of Bulk 3C-SiC Material
Comparison between Ar and N2 for High-Temperature Treatment of 4H-SiC Substrates
SiC Epitaxy on Non-Standard Surfaces
4H-SiC Epitaxial Growth for High-Power Devices
Predictions of Nitrogen Doping in SiC Epitaxial Layers
Experiment and Modeling of the Large-Area Etching and Growth Rate of Epitaxial SiC
Chemical Vapor Deposition of n-Type SiC Epitaxial Layers Using Phosphine and Nitrogen as the Precursors
Wide-Area Homoepitaxial Growth of 6H-SiC on Nearly On-Axis (0001) by Chemical Vapor Deposition
Nitrogen Delta Doping in 4H-SiC Epilayers
Temperature Effects in SiC Epitaxial Growth
Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVD
Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System
Origin and Behaviour of Deep Levels in Sublimation Growth of 4H-SiC Layers
Vacancies in As-Grown and Electron-Irradiated 4H-SiC Epilayers Investigated by Positron Annihilation
Computational Modeling for the Development of CVD SiC Epitaxial Growth Processes
Is Al-Si a Good Melt for the Low-Temperature LPE of 4H-SiC?
Uniformity Improvement in SiC Epitaxial Growth by Horizontal Hot-Wall CVD
Features of Sublimation Growth on Porous SiC Substrates: Characteristics and Properties of Porous and Epitaxial Layers
The Effect of Thermal Gradients on SiC Wafers
Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes
Epitaxial Growth of 6H-SiC by a Vapor Liquid Solid Method
Growth of p-Type SiC Layer by Sublimation Epitaxy
Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate
Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy
Growth of SiC Hetero-Epitaxial Films by Pulsed-Laser Deposition -Laser Frequency Dependence-
Thin Film SiC Epitaxy on Si(111) from Acetylene Precursor
Preparation of SiC/Si(111) Hetero-Epitaxial Junctions by PLD and Crystallographic and l-V Characterization
Hetero-Epitaxial Growth of 3C-SiC on Carbonized Silicon Substrates
High-Resolution XRD Investigations of the Strain Reduction in 3C-SiC Thin Films Grown on Si (111) Substrates
SiC Synthesis by Fullerene Free Jets on Si(111) at Low Temperatures
Production of 8-Inch SiC Wafer by Hybridization of Single and Polycrystalline SiC Wafers
Synchrotron White Beam X-Ray Topography and High Resolution Triple Axis X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Devices
Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing
Lattice Dynamics of 4H-SiC by Inelastic X-Ray Scattering
Conditions for Micropipe Dissociation by 4H-SiC CVD Growth
Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy Imaging
Doping-Related Strain in n-Doped 4H-SiC Crystals
Stacking Faults in 3C-SiC Relax Lattice Deformation
Characteristics of Planar Defects in Shallow Trenches Related to the Presence of Micropipes
Orientation-Dependent Defect Formation in Silicon Carbide Epitaxial Layers
Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC
High-Accuracy Lattice Constant Measurements of Electron-Irradiated 6H-SiC Single Crystals
Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation
Dynamics of 4H-SiC Plasticity
Time-Resolved Photoluminescence of Deep Centers in Semi-Insulating 4H-SiC
Identification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H SiC by Photoluminescence Spectroscopy
Photoluminescence Up-Conversion Processes in SiC
New Photoluminescence Features in 4H-SiC Induced by Hydrogenation
Analysis of Extended Defects in 6H-SiC Using Photoluminescence and Light Beam Induced Current Spectroscopy
Donor-Acceptor Pair Luminescence in 4H-SiC Doped with Nitrogen and Aluminum
Raman Excitation Profiles of 3C-, 4H-, 6H-, 15R- and 21R-SiC
Infrared Optical Properties of 3C, 4H and 6H Silicon Carbide
Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC
Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals
Determination of Exciton Capture Cross-Sections of Neutral Nitrogen Donor on Cubic and Hexagonal Sites in n-Type (N) 6H-SiC
Dll PL Intensity Dependence on Dose, Implantation Temperature and Implanted Species in 4H- and 6H-SiC
Application of UV Scanning Photoluminescence Spectroscopy for Minority Carrier Lifetime Mapping
Raman Imaging Analysis of SiC Wafers
Simple Method for Mapping Optical Defects in Insulating Silicon Carbide Wafers
Non-Destructive SiC Wafer Evaluation Based on an Optical Stress Technique
Electrical and Optical Characterization of SiC
Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC
Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy
Majority Traps Observed in H+- or He+-Implanted Al-Doped 6H-SiC by Admittance and Deep Level Transient Spectroscopy
On the Unusual Nature of a DLTS-Detected Defect in Bulk n-Type 6H-SiC
High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers
Modeling of Lattice Heat Conductivity and Thermopower in SiC Considering the Four-Phonon Scattering Processes
Improved p-Type Conductivity in Heavily Al-Doped SiC by Ion-Beam-Induced Nano-Crystallization
Transport Investigation of Low-Nitrogen-Doped 6H-SiC Ion-Implantation vs. In Situ Doping
From Transport Measurements to Infrared Reflectance Spectra of n-Type Doped 4H-SiC Layer Stacks
Impact of Phonon Drag Effect on Seebeck Coefficient in p-6H-SiC: Experiment and Simulation
Parameters of Electron-Hole Scattering in Silicon Carbide
Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy
Electrical Characterization of Ni/Porous SiC/n-SiC Structure
Correlation between Electrical and Optical Mapping of Boron Related Complexes in 4H-SiC
Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region
Mapping on Bulk and Epitaxy Layer 4H-SiC
Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates
Electron-Induced Damage Effects in 4H-SiC Schottky Diodes
Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation
Real Relationship between Acceptor Density and Hole Concentration in Al-Implanted 4H-SiC
Electrical Characteristics of Plasma-Enhanced Chemical Vapor Deposited Silicon Carbide Thin Films
Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky Diodes
Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers
Deep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD Parameters
Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions
Identification and Annealing of Common Intrinsic Defect Centers
Polytype-Dependent Vacancy Annealing Studied by Positron Annihilation
Nitrogen-Vacancy Complexes in SiC - Final Annealing Products of the Silicon Vacancy?
A Deep Erbium-Related Bandgap State in 4H Silicon Carbide
Theoretical Study of Antisite Aggregation in -SiC
EPR Studies of Interface Defects in n-Type 6H-SiC/SiO2 Using Porous SiC
Electrical and Multifrequency EPR Study of Nitrogen and Carbon Antisite-Related Native Defect in n-Type As-Grown 4H-SiC
Phosphorus-Related Shallow and Deep Defects in 6H-SiC
EPR Study of Electron Irradiation-Induced Defects in Semi-Insulating SiC:V
Calculation of Hyperfine Constants of Defects in 4H-SiC
A Simple Model of 3d Impurities in Cubic Silicon Carbide
Effective Mass of Electrons in Quantum-Well-Like Stacking-Fault Gap States in Silicon Carbide
A Shallow Acceptor Complex in 4H-SiC: AlSiNCAlSi
Electronic Structure of Twin Boundaries in 3C-SiC, Si and Diamond
Electronic Properties of Stacking Faults in 15R-SiC
A Cause for SiC/SiO2 Interface States: the Site Selection of Oxygen in SiC
Angle-Resolved Studies of SiO2/SiC Samples
Positron Annihilation Studies of Defects at the SiO2/SiC Interface
A Study of the Shallow Electron Traps at the 4H-SiC/SiO2 Interface
Traps at the Interface of 3C-SiC/SiO2-MOS-Structures
Study of the Wet Re-Oxidation Annealing of SiO2/4H-SiC (0001) Interface Properties by AR-XPS Measurements
Structural Defects at SiO2/SiC Interfaces Detected by Positron Annihilation
Reduction of Interface Trapped Density of SiO2/4H-SiC by Oxidation of Atomic Oxygen
High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000-1) Face Using H2 Post-Oxidation Annealing
Cubic SiC Surface Structure Studied by X-Ray Diffraction
Adsorption of Toluene on Si(100) from First Principles
Atomic Structure of Si-Rich 3C-SiC(001)-(3x2): a Photoelectron Diffraction Study
Effects of Initial Nitridation on the Characteristics of SiC-SiO2 Interfaces
Ag Growth on 3C-SiC(001) c(2x2) C-Terminated and c(4x2) Si-Terminated Surfaces
Modelling the Formation of Nano-Sized SiC on Si
Nanostructure Formation on a Surface of 6H-SiC by Laser Radiation
Theoretical Investigation of Adsorption of N-Containing Species at SiC(0001) Surfaces
Electrical Activation of Ion-Implanted Nitrogen and Aluminum in 4H-SiC by Excimer Laser Annealing
Surface Properties and Electrical Characteristics of Rapid Thermal Annealed 4H-SiC
Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11-20) Face
Damage Relaxation Pre-Activation Anneal in Al-Implanted SiC
Electrical Characterization of Ion-Implanted n+/p 6H-SiC Diodes
High-Sensitivity Ion Beam Analytical Method for Studying Ion-Implanted SiC
SiC Delta-Doped-Layer Structures and DACFET
Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC
Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers
Vacancy-Type Defect Distributions of 11B-, 14N- and 27Al-Implanted 4H-SiC Studied by Positron Annihilation Spectroscopy
Damage Distributions Induced by Channeling Implantation of Nitrogen into 6H Silicon Carbide
First-Principles Studies of N and P Dopant Interactions in SiC: Implications for Co-Doping
Quantitative Evaluation of Implantation Damage and Damage Recovery after Room Temperature Ion-Implantation of N+ and P+ Ions in 6H-SiC
Porous SiC: New Applications through In- and Out- Dopant Diffusion
Co-Formation of Gate Electrode and Ohmic Contacts in SiC Power MOSFETs
Electrochemical Etching of n-Type 6H-SiC Using Aqueous KOH Solutions
Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs
Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data
Low-Frequency Noise Measurements as a Quality Indicator for Ohmic Contacts to n-GaN
Thermal Stability of Pd Schottky Contacts to p-Type 6H-SiC
Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement
The Effect of Plasma Etching on the Electrical Characteristics of 4H-SiC Schottky Diodes
Use of Laser Interferometry and Optical Emission Spectroscopy for Monitoring the Reactive Ion Etching of 6H - and 4H-SiC
Diffusion-Welded Al Contacts to p-Type SiC
Thermal Etching of 6H-SiC (11-20) Substrate Surface
Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission
Characteristics of Ni Schottky Contacts on Compensated 4H-SiC Layers
Pd-Based Ohmic Contacts to LPE 4H-SiC with Improved Thermal Stability
Surface Structure of Electrochemically Etched -SiC Substrates
Schottky-Ohmic Transition in Nickel Silicide/SiC System: Is it Really a Solved Problem?
Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process
Influence of Material Properties on Wide-Bandgap Microwave Power Device Characteristics
A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates
Performance of Silicon Carbide Microwave MESFETs Using a Thin p-Doped Buffer Layer
RF Characteristics of Short-Channel SiC MESFETs
Passivation Effect on Channel Recessed 4H-SiC MESFETs
4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure
Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC
Modelling of Radiation Response of p-Channel SiC MOSFETs
Influence of Depletion Region Length on Specific On-Resistance in SiC MOSFET
4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications
Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs
Optimisation of a 4H-SiC Enhancement Mode Power JFET
Electro-Thermal Simulations and Measurement of Silicon Carbide Bipolar Transistors
Power Amplification in UHF Band Using SiC RF Power BJTs
Demonstration of Monolithic Darlington Transistors in 4H-SiC
High-Voltage Modular Switch Based on SiC VJFETs - First Results for a Fast 4.5kV/1.2 Configuration
Design and Technology Considerations for a RF BJT in SiC
Analysis of Unipolar and Bipolar Cascoded Switches with MOS Gate
SiC Power Devices: How to be Competitive towards Si-Based Solutions?
SiC Power Devices on QUASIC and SiCOI Smart-Cut (R) Substrates: First Demonstrations
Low Power Dissipation SiC Schottky Rectifiers with a Dual-Metal Planar Structure
Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier Diodes
Comparison between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results
Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process
Characterization of the Forward Conduction of 4H-SiC Planar Junction Diode
The Electrothermal Behavior of 4H-SiC Schottky Diodes at Forward Bias Considering Single Pulse and Pulsed Current Operation
1kV 4H-SiC JBS Rectifiers Fabricated Using an AlN Capped Anneal
Simulations of High-Voltage 4H-SiC p+nn+ Diodes Using a Transient Model for the Deep Boron Level
Optical Switch-On of Silicon Carbide Thyristor
Reverse Current Recovery in 4H-SiC Diodes with n- and p-Base
SiC Lateral Super-Junction Diodes Fabricated by Epitaxial Growth
OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension
4H-SiC pn Diode Grown by LPE Method for High-Power Applications
Characterization of a 4H-SiC High Power Density Controlled Current Limiter
Forward Dynamic IV Characteristics in Epitaxial and Implanted SiC PiN Power Diodes
Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination
Fabrication and Characterisation of High-Voltage SiC-Thyristors
SiC Device Limitation Breakthrough with Novel Floating Junction Structure on 4H-SiC
Novel Buried Field Rings Edge Termination for 4H-SiC High-Voltage Devices
To Be ''Snappy'' or Not - a Comparison of the Transient Behaviours of Bipolar SiC-Diodes
Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC
Insight into the Degradation Phenomenon in SiC Devices from Ab Initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults
Properties of Different Stacking Faults that Cause Degradation in SiC PiN Diodes
Impact of SiC Structural Defects on the Degradation Phenomenon of Bipolar SiC Devices
Stacking Fault - Stacking Fault Interactions and Cubic Inclusions in 6H-SiC: an Ab Initio Study
Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11-20) Face
Reliability of 4H-SiC p-n Diodes on LPE Grown Layers
In Situ Studies of Structural Instability in Operating 4H-SiC PiN Diodes
SEM Visibility of Stacking Faults in 4H-Silicon Carbide Epitaxial and Implanted Layers
SiC X-Ray Detectors for Spectroscopy and Imaging over a Wide Temperature Range
Effects of Nitrogen Radical Irradiation on Performance of SiC MOSFETs
New Tunnel Schottky SiC Devices Using Mixed Conduction Ceramics
MISiCFET Chemical Sensors for Applications in Exhaust Gases and Flue Gases
Radiation Hardness of Silicon Carbide
NO Gas Detection at High Temperature Using Thin-Pt 4H-SiC and 6H-SiC Schottky Diodes
Improved Understanding and Optimization of SiC Nearly Solar Blind UV Photodiodes
p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation
Effect of Tantalum in Sublimation Growth of Aluminum Nitride
Growth of AlN Bulk Crystals by Sublimation Sandwich Method
Seeded PVT Growth of Aluminum Nitride on Silicon Carbide
Growth and Characterization of Epitaxial Wurtzite Al1-xInxN Thin Films Deposited by UHV Reactive Dual DC Magnetron Sputtering
Implementation of Hot-Wall MOCVD to the Growth of High-Quality GaN on SiC
Properties of AlN Layers Grown by Sublimation Epitaxy
Microstructure of GaN Layers Grown onto (001) and (111) GaAs Substrates by Molecular Beam Epitaxy
Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates
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