Hierarchical device simulation : the Monte-Carlo perspective

Author(s)

    • Jungemann, Christoph
    • Meinerzhagen, Bernd

Bibliographic Information

Hierarchical device simulation : the Monte-Carlo perspective

Christoph Jungemann, Bernd Meinerzhagen

(Computational microelectronics)

Springer, c2003

Available at  / 3 libraries

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Note

Includes bibliographical references and index

Description and Table of Contents

Description

This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.

Table of Contents

Introduction References Semiclassical Transport Theory The Boltzmann Transport Equation * Balance Equations * The Microscopic Relaxation Time * Fluctuations in the Steady-State * References The Monte-Carlo Method Basic Monte-Carlo Methods * The Monte-Carlo Solver of the Boltzmann Equation * Velocity Autocorrelation Function * Basic Statistics * Convergence Estimation * References Scattering Mechanisms Phonon Scattering * Alloy Scattering * Impurity Scattering * Impact Ionization by Electrons * Surface Roughness Scattering * References Full-Band Structure Basic Properties of the Band Structure of Relaxed Silicon * Basic Properties of the Band Structure of Strained SiGe * k-Space Grid * Calculation of the Density of States * Mass Tensor Evaluation * Particle Motion in Phase-Space * Selection of a Final State in k-Space * References Device Simulation Device Discretization * Band Edges * Poisson Equation * Self-Consistent Device Simulation * Nonlinear Poisson Equation * Nonself-Consistent Device Simulation * Statistical Enhancement * Terminal Current Estimation * Contact Resistance * Normalization of Physical Quantities * References Momentum-Based Transport Models The Hydrodynamic Model * Small-Signal Analysis * Noise Analysis * The Drift-Diffusion Model * Transport and Noise Parameter Simulation * References Stochastic Properties of Monte-Carlo Device Simulations Stochastic Error * In-Advance CPU Time Estimation * References Results N+ NN+ and P+ PP+ Structures * MOSFETs * SiGe HBTs Subject Index

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Details

  • NCID
    BA63854831
  • ISBN
    • 321101361X
  • Country Code
    au
  • Title Language Code
    eng
  • Text Language Code
    eng
  • Place of Publication
    Wien
  • Pages/Volumes
    xvi, 254 p.
  • Size
    25 cm
  • Parent Bibliography ID
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