Hierarchical device simulation : the Monte-Carlo perspective

著者

    • Jungemann, Christoph
    • Meinerzhagen, Bernd

書誌事項

Hierarchical device simulation : the Monte-Carlo perspective

Christoph Jungemann, Bernd Meinerzhagen

(Computational microelectronics)

Springer, c2003

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注記

Includes bibliographical references and index

内容説明・目次

内容説明

This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.

目次

Introduction References Semiclassical Transport Theory The Boltzmann Transport Equation * Balance Equations * The Microscopic Relaxation Time * Fluctuations in the Steady-State * References The Monte-Carlo Method Basic Monte-Carlo Methods * The Monte-Carlo Solver of the Boltzmann Equation * Velocity Autocorrelation Function * Basic Statistics * Convergence Estimation * References Scattering Mechanisms Phonon Scattering * Alloy Scattering * Impurity Scattering * Impact Ionization by Electrons * Surface Roughness Scattering * References Full-Band Structure Basic Properties of the Band Structure of Relaxed Silicon * Basic Properties of the Band Structure of Strained SiGe * k-Space Grid * Calculation of the Density of States * Mass Tensor Evaluation * Particle Motion in Phase-Space * Selection of a Final State in k-Space * References Device Simulation Device Discretization * Band Edges * Poisson Equation * Self-Consistent Device Simulation * Nonlinear Poisson Equation * Nonself-Consistent Device Simulation * Statistical Enhancement * Terminal Current Estimation * Contact Resistance * Normalization of Physical Quantities * References Momentum-Based Transport Models The Hydrodynamic Model * Small-Signal Analysis * Noise Analysis * The Drift-Diffusion Model * Transport and Noise Parameter Simulation * References Stochastic Properties of Monte-Carlo Device Simulations Stochastic Error * In-Advance CPU Time Estimation * References Results N+ NN+ and P+ PP+ Structures * MOSFETs * SiGe HBTs Subject Index

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詳細情報

  • NII書誌ID(NCID)
    BA63854831
  • ISBN
    • 321101361X
  • 出版国コード
    au
  • タイトル言語コード
    eng
  • 本文言語コード
    eng
  • 出版地
    Wien
  • ページ数/冊数
    xvi, 254 p.
  • 大きさ
    25 cm
  • 親書誌ID
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