Silicon-germanium strained layers and heterostructures
著者
書誌事項
Silicon-germanium strained layers and heterostructures
（Semiconductors and semimetals, v. 74）
Academic Press, 2003
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注記
Includes bibliographical references (p. 243-280) and index
内容説明・目次
内容説明
The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.
目次
- Introduction
- Strain, Stability, reliability and growth
- mechanism of strain relaxation
- strain, growth, and TED in SiGeC layers
- Bandstructure and related properties
- Heterostructure Bipolar Transistors
- FETs and other devices.
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