RF and microwave semiconductor device handbook
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Bibliographic Information
RF and microwave semiconductor device handbook
CRC Press, c2003
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Some copies: 29 cm
Description and Table of Contents
Description
Offering a single volume reference for high frequency semiconductor devices, this handbook covers basic material characteristics, system level concerns and constraints, simulation and modeling of devices, and packaging. Individual chapters detail the properties and characteristics of each semiconductor device type, including: Varactors, Schottky diodes, transit-time devices, BJTs, HBTs, MOSFETs, MESFETs, and HEMTs. Written by leading researchers in the field, the RF and Microwave Semiconductor Device Handbook provides an excellent starting point for programs involving development, technology comparison, or acquisition of RF and wireless semiconductor devices.
Table of Contents
Varactors. Schottky Diode Frequency Multipliers. Transit Time Microwave Devices. Bipolar Junction Transistors. Heterostructure Bipolar Transistors. Metal-Oxide-Semiconductor Field Effect Transistors. Metal Semiconductor Field Effect Transistors. High Electron Mobility Transistors. RF Power Transistors from Wide Bandgap Materials. Monolithic Microwave IC Technology. Metals. RF Package Design and Development. Thermal Analysis and Design of Electronic Systems. Low Voltage/Low Power Microwave Electronics. Technology Computer Aided Design. Nonlinear Transistor Modeling for Circuit Simulation.
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