Long-wavelength infrared semiconductor lasers
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書誌事項
Long-wavelength infrared semiconductor lasers
（Wiley series in lasers and applications）
John Wiley & Sons, c2004
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注記
"Wiley-Interscience."
Includes bibliographical references and index
内容説明・目次
内容説明
Long-wavelength Infrared Semiconductor Lasers provides a comprehensive review of the current status of semiconductor coherent sources emitting in the mid-to far-infrared spectrum and their applications. It includes three topics not covered in any previous book: far-infrared emission from photo-mixers as well as from hot-hole lasers, and InP-based lasers emitting beyond two micrometers. Semiconductor lasers emitting at more than two micrometers have many applications such as in trace gas analysis, environmental monitoring, and industrial process control. Because of very rapid progress in recent years, until this book no comprehensive information beyond scattered journal articles is available at present.
目次
Preface.
Acknowledgments.
Contributors.
1. Coherent Sources in the Long-Wavelength Infrared Spectrum(Hong K. Choi).
1.1 Introduction.
1.2 Synopsis of Long-Wavelength Coherent Sources.
1.3 Scope of Book.
2. 2-m Wavelength Lasers Employing InP-basedStrained-Layer Quantum Wells (Manabu Mitsuhara and MamoruOishi).
2.1 Introduction.
2.2 Material Properties of InGaAsP.
2.3 Design Consideration of MQW Active Region.
2.4 Growth and Characterization of Strained-InGaAs QuantumWells.
2.5 Lasing Characteristics of 2-m wavelength InGaAs-MQWLasers.
2.6 Conclusions and Future Prospects.
3. Antimonide Mid-IR Lasers (L.J. Olafsen, et al.).
3.1 Introduction.
3.2 Antimonide III-V Material System.
3.3 Antimonide Lasers Emitting in the 2m < lambda <3m Range.
3.4 Antimonide Lasers Emitting in the lambda >= 3mRange.
3.5 Challenges and Issues.
3.6 Conclusions.
4. Lead-Chalcogenide-based Mid-Infrared Diode Lasers (Uwe PeterSchieal, et al.).
4.1 Introduction.
4.2 Homostructure Lasers.
4.3 Double-Heterostructure Lasers.
4.4 Quantum-Well Lasers.
4.5 DFB and DBR Lasers.
4.6 IV-VI Epitaxy on BaF2 and Silicon.
4.7 Conclusion.
5. InP and GaAs-Based Quantum Cascade Lasers (JeromeFaist and Carco Sirtori).
5.1 Introduction.
5.2 Quantum Cascade Laser Fundamentals.
5.3 Fundamentals of the Three-Quantum-Well Active-RegionDevice.
5.4 Waveguide and Technology.
5.5 High-Power, Room-Temperature Operation of Three-Quantum-WellActive Region Designs.
5.6 GaAs-Based QC Lasers.
5.7 Role of the Conduction-Band Discontinuity.
5.8 Spectral Characteristics of QC Lasers.
5.9 Distributed Feedback Quantum Cascade Lasers.
5.10 Microsctructured QC Lasers.
5.11 Outlook on Active Region Designs and Conclusions.
6. Widely Tunable Far-Infrared Hot-Hole Semiconductor Lasers(Erik Brundermann).
6.1 Introduction.
6.2 Hot-Hole Laser Model.
6.3 Laser Material Fabrication.
6.4 Technology.
6.5 Laser Emission.
6.6 Future Trends.
6.7 Summary.
7. Continous THz generation with Optical Heterodyning (J. C.Pearson, et al.).
7.1 Introduction.
7.2 Requirements for Photomixing Systems.
7.3 Design Trade-offs for Photomixers.
7.4 Antenna Design.
7.5 Applications.
7.6 Summary.
Index.
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