Ferroelectric thin films XII : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A.
著者
書誌事項
Ferroelectric thin films XII : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A.
（Materials Research Society symposium proceedings, v. 784）
Materials Research Society, c2004
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注記
Includes bibliographical references and indexes
内容説明・目次
内容説明
This book, first published in 2004, offers scientific and technological information on ferroelectric thin films from an international mix of academia, industry and government organizations. Presentations focus on the expanding scientific understanding of, and significant progress in, ferroelectric device technology, along with continuing developments in novel oxide materials. Advances presented on high-density ferroelectric nonvolatile memories (FeRAMs) include issues of materials integration, metal oxide electrodes utilization, the effect of stress on capacitors, and long-term reliability. Impressive developments in the integration of ferroelectric thin films on silicon are addressed in a joint section with Symposium E, Fundamentals of Novel Oxide/ Semiconductor Interfaces. Special emphasis is placed on heterostructures of silicon substrates and oxide thin films, and on the thermal stability of these interfaces. Topics include: fundamentals of ferroelectric thin films - emphasis on strain; fundamentals of ferroelectric thin films - emphasis on characterization and domains; oxide films processing; ferroelectric films; dielectric films applications; ferroelectric films for memories; gate dielectrics and functional oxides in silicon; and piezoelectric, optical and pyroelectric applications.
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