SiC power materials : devices and applications
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書誌事項
SiC power materials : devices and applications
（Springer series in materials science, 73）
Springer, 2004
- : alk. paper
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内容説明・目次
内容説明
This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century.
目次
1 Materials Science and Engineering of Bulk Silicon Carbides.- 2 Fundamental Properties of SiC: Crystal Structure, Bonding Energy, Band Structure, and Lattice Vibrations.- 3 Sublimation Growth of SiC Single Crystals.- 4 Crystal Growth of Silicon Carbide: Evaluation and Modeling.- 5 Lattice Dynamics of Defects and Thermal Properties of 3C-SiC.- 6 Optical and Interdisciplinary Analysis of Cubic SiC Grown on Si by Chemical Vapor Deposition.- 7 Electron Paramagnetic Resonance Characterization of SiC.- 8 Material Selection and Interfacial Reaction in Ohmic-Contact Formation on SiC.- 9 Oxidation, MOS Capacitors, and MOSFETs.- 10 4H-SiC Power-Switching Devices for Extreme-Environment Applications.- 11 SiC Nuclear-Radiation Detectors.
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