Annual report of the semiconductor team in NASDA space utilization research program : effects of microgravity environments on growth related properties of semiconductor alloys (InGaAs) - growth of homogeneous crystals
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Annual report of the semiconductor team in NASDA space utilization research program : effects of microgravity environments on growth related properties of semiconductor alloys (InGaAs) - growth of homogeneous crystals
（NASDA technical memorandum, NASDA-TMR-990006E,
National Space Development Agency of Japan, 1999-
- 1998
- 1999
- 2000
- 2001
- 2002
大学図書館所蔵 件 / 全1件
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1998//027232004135106,
1999031212007500235, 2000//027232004135196, 2001//027232004135258, 2002//027232004136198 -
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注記
Space Utilization Research Program