Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A.
著者
書誌事項
Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A.
（Materials Research Society symposium proceedings, v. 815）
Materials Research Society, c2004
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注記
"This volume contains the papers presented at Symposium J, 'Silicon Carbide--Materials, Processing and Devices,' held April 14-15 at the 2004 MRS Spring Meeting in San Francisco, California"--Pref
Includes bibliographical references and indexes
内容説明・目次
内容説明
Silicon carbide (SiC) is a wide-bandgap semiconductor that can operate at temperatures well above 300C, where silicon cannot perform. In addition, due to a high thermal conductivity equal to copper at room temperature, SiC is an ideal candidate for operation in harsh environments and at high-power levels. Rapid advances in SiC materials and devices have recently resulted in implementation of SiC-based electronic systems, and the impact of these devices is expected to significantly increase in the next several years. This book documents the most recent results on growth of bulk and epitaxial layers, physical and structural properties, process technology, and device development obtained since the 10th International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM2003) held in Lyon, France. Extended defects in silicon carbide are highlighted. The nature of defects induced by forward biasing of bipolar devices, as well as methods to suppress the degradation, are addressed.
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