Silicon carbide : materials, processing, and devices
著者
書誌事項
Silicon carbide : materials, processing, and devices
（Optoelectronic properties of semiconductors and superlattices / edited by M. O. Manasreh, v. 20）
Taylor & Francis, 2004
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注記
Includes bibliographical references and index
内容説明・目次
内容説明
This book will provide useful information to material growers and evaluators, device design and processing engineers as well as potential users of SiC technologies. This book will help identify remaining challenging issues to stimulate further investigation to realize the full potential of wide band gap SiC for optoelectronic and microelectronic applications.
目次
Preface
Chapter 1 Epitaxial growth of high-quality silicon carbide - Fundamentals and recent
progress -
-- T. Kimoto and H. Matsunami* (Kyoto University)
(1) Introduction
(2) Step-controlled Epitaxy of SiC
2.1 Chemical vapor deposition
2.2 Step-controlled epitaxy
2.3 Surface morphology
(3) Growth mechanism of step-controlled epitaxy
3.1 Rate-determining process
3.2 Off-angle dependence of growth rate
3.3 Temperature dependence of growth rate
3.4 Prediction of step-flow growth condition
3.4.1 Surface diffusion model
3.4.2 Desorption flux
3.4.3 Critical supersaturation ratio
3.4.4 Critical growth conditions
3.4.5 Surface diffusion length
3.4.6 Prediction of growth mode
(4) Behaviors of steps in SiC epitaxy
4.1 Nucleation and step motion
4.2 Step bunching
(5) Characterization of epitaxial layers
5.1 Structural characterization
5.2 Optical characterization
5.3 Electrical characterization
(6) Doping of impurities
6.1 Donor doping
6.2 Acceptor doping
(7) Recent progress
7.1 Practical epitaxial growth
7.2 Epitaxial growth on (11-20)
(8) Concludions
References
Chapter 2 Surface characterization of 6H-SiC reconstructions
-- Kian-Ping LOH, Eng-Soon TOK, and Andrew T. S. WEE*
(National University of Singapore)
1. INTRODUCTION
2. Sample preparation methods for characterization of surface reconstruction
3. Reflection High Energy Electron Diffraction (RHEED)
3.1 RHEED system set-up
3.2 RHEED analysis of surface reconstruction on 6H-SiC (0001)
3.3 6H-SiC (0001)-(11) reconstruction
3.4 6H-SiC (0001)-(33) reconstruction
3.5 6H-SiC(0001)-(6x6) reconstruction
3.6 6H-SiC(0001)-(OE3OE3R ) reconstruction
3.7 11 graphite-R on 11 SiC
3.8 RHEED Rocking beam analysis
4. Scanning Tunneling Microscopy (STM)
4.1 Surface Morphological Evolution of 6H-SiC(0001)
4.2 6H-SiC (0001)-(3&
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