Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

著者

• International Conference on Silicon Carbide and Related Materials
• Madar, R
• Camassel, J
• Blanquet, Elisabeth

書誌事項

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

edited by Roland Madar, Jean Camassel, Elisabeth Blanquet

（Materials science forum, v. 457-460）

Trans Tech Publications, c2004

• set
• v. 1
• v. 2

タイトル別名

ICSCRM2003

注記

Includes bibliographical references and index

内容説明・目次

内容説明

Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use. Volume is indexed by Thomson Reuters CPCI-S (WoS).

目次

Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances SiC Crystal Growth by HTCVD Effects of Ionicity on Defect Physics of Wide-Band-Gap Semiconductors Possibility of Power Electronics Paradigm Shift with Wide Band Gap Semiconductors High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices Large Diameter 4H-SiC Substrates for Commercial Power Applications Investigation of Graphite Particle Inclusions in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique Study of Polytype Switching vs. Micropipes in PVT Grown SiC Single Crystals Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide Thermodynamic Analysis of the Production of Silicon Carbide via Silicon Dioxide and Carbon Faceted Growth of SiC Bulk Crystals Theoretical Analysis of the Mass Transport in the Powder Charge in Long-Term Bulk SiC Growth Free Growth of 4H-SiC by Sublimation Method Advanced PVT Growth of 2 & 3-Inch Diameter 6H SiC Crystals Radial Expansion Growth of SiC Single Crystals with Higher Crystal Quality Growth and Characterization of SiC Bulk Crystals Grown on an Off-Oriented (11-20) Seed Crystal Growth of Bulk SiC by Halide Chemical Vapor Deposition Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method Effect of Thermal Field on Interface Step Structures during PVT Growth of (0001)Si 6H-SiC Large Diameter and Long Length Growth of SiC Single Crystal Effect of Crucible Design on the Shape and the Quality in 6H-SiC Crystals Grown by Physical Vapor Transport Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {03-38} Substrate and Defect Analysis Natural Crystal Habit and Preferential Growth Directions during PVT of Silicon Carbide High Quality SiC Bulk Growth by Sublimation Method using Elemental Silicon and Carbon Powder as SiC Source Materials Flux Growth of SiC Crystals from Eutectic Melt SiC-B4C Solution Growth of Self-Standing 6H-SiC Single Crystal Using Metal Solvent The Effect of a Periodic Movement on the Die of the Bottom Line of the Melt/Gas Meniscus in the Case of Silicon Filaments Grown from the Melt in a Vacuum by Edge-Defined Film-Fed Growth Method Continuous Growth of SiC Single Crystal by the Spray Dried Powder Made of Ultra-Fine Particle Precursors Comparison between Various Chemical Systems for the CVD Step in the CF-PVT Crystal Growth Method In Situ SiC Feeding by Chemical Vapor Deposition for Bulk Growth Stable Parameter Range for 3C-SiC Sublimation Growth on Graphite Microstructure of Cubic SiC Grown by the Modified Lely-Method Growth of 3C-SiC Bulk Material by the Modified Lely Method Characterization of SiC Epitaxial Structures using High-Resolution X-Ray Diffraction Techniques Surface Mechanisms in Homoepitaxial Growth on -SiC{0001}-Vicinal Faces Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers Flash Lamp Supported Deposition of 3C-SiC (FLASiC) - a Promising Technique to Produce High Quality Cubic SiC Layers Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications Selective Growth of 4H-SiC on 4H-SiC Substrates using a High Temperature Mask Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD High-Speed Growth of High-Purity Epitaxial Layers with Specular Surface on 4H-SiC(000-1) Face Growth of Device Quality 4H-SiC High Velocity Epitaxy Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition 4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth Comparative Studies of <0001> 4H-SiC Layers Grown with either Silane or HexaMethylDiSilane / Propane Precursor Systems Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8 Degrees Off-Axis 4H-SiC(0001) Substrates and their Characterization Uniformity Improvement in SiC Epitaxial Growth by using Si-Condensation Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut Directions Homoepitaxial Growth of Al-Doped 4H-SiC Using Bis-Trimethylsilylmethane Precursor Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC Substrates Vapour-Liquid-Solid Induced Localised Growth of Heavily Al Doped 4H-SiC on Patterned Substrate Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism Simple Model for Calculation of SiC Epitaxial Layers Growth Rate in Vacuum Modelling of SiC-Matrix Composite Formation by Thermal Gradient Chemical Vapour Infiltration Pendeo Epitaxial Growth of 3C-SiC on Si Substrates Comparative Growth Behavior of 3C-SiC Mesa Heterofilms with and without Extended Defects Checker-Board Carbonization for Control and Reduction of the Mean Curvature of 3C-SiC Layers Grown on Si(100) Substrates Growth of SiC Films using Tetraethylsilane Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls" Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-Epitaxy Potential of HMDS/C3H8 Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100) Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor Deposition Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001) Substrate by Sublimation Epitaxy Structure and Composition of 3C-SiC:Ge Alloys Grown on Si (111) Substrates by SSMBE Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111) Stress Control in 3C-SiC Films Grown on Si(111) Development of a High-Throughput LPCVD Process for Depositing Low Stress Poly-SiC Low Temperature ECR-PECVD Microcrystalline SiC Growth by Pulsed Gas Flows Investigation of Thick 3C-SiC Films Re-Grown on Thin 35 nm "Flash Lamp Annealed" 3C-SiC Layers Low Temperature (320 DegreesC) Deposition of Hydrogenated Microcrystalline Cubic Silicon Carbide Thin Films Effect of Carbonization in Bias-Enhanced Nucleation Step during Highly-Oriented Growth of Diamond Films on 6H-SiC(0001) Substrate Formation of SiC/Si Multilayer Structures on Si(100) by Supersonic Free Jets of Single Gas Source CH3SiH3 Growth of SiC Nanorods and Microcrystals by Carbon Nanotubes-Confined Reaction Modelling and Regrowth Mechanisms of Flashlamp Processing of SiC-on-Silicon Heterostructures Structural Defects in SiC Crystals Investigated by High Energy X-Ray Diffraction TEM Observations of 4H-SiC Deformed at Room Temperature and 150 DegreesC TEM Studies on the Initial Stage of Seeded Solution Growth of 6H-SiC using Metal Solvent Structural Characterization of Thin 3C-SiC Films Annealed by the Flash Lamp Process Study of Dislocation Mobility in 4H SiC by X-Ray Transmission Topography, Chemical Etching and Transmission Electron Microscopy TEM of Dislocations in Forward-Biased 4H-SiC PiN Diodes X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface Structural Transformation of Dislocated Micropipes in Silicon Carbide Deformation of 4H-SiC Single Crystals Oriented for Prism Slip Inelastic Stress Relaxation in Single Crystal SiC Substrates Dependence of Micropipe Dissociation on Surface Orientation Analysis of Threading Dislocations in Wide-Bandgap Hexagonal Semiconductors by Energetic Approach Electron Back Scattering Diffraction (EBSD) as a Tool for the Investigation of 3C-SiC Nucleation and Growth on 6H or 4H Reconstruction of Cleaved 6H-SiC Surfaces The Atomic Structure of the Hydrogen Saturated a-Planes of 4H-SiC H-Induced Si-Rich 3C-Si(100) 3x2 Surface Metallization Morphological Evolution of SiC(0001) Surfaces without Ambient Gas by High Temperature Annealing in High-Vacuum SiC Surface Nanostructures Induced by Self-Ordering of Nano-Facets Dynamic of Laser Ablation in SiC Tailoring the SiC Subsurface Stacking by the Chemical Potential Growth of Ultrathin Ag Films on 4H-SiC(0001) Wettability Study of SiC in Correlation with XPS Analysis Interface Electronic Structures of Transition Metal(Cr, Fe) on 6H(4H)-SiC(0001)Si Face by Soft X-Ray Fluorescence Spectroscopy Modification of 6H-SiC Surface Defect Structure during Hydrogen Etching Defects in High-Purity Semi-Insulating SiC Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC A Theoretical Study of Carbon Clusters in SiC: a Sink and a Source of Carbon Interstitials Density Functional Based Modelling of 30 Degrees Partial Dislocations in SiC Atomic Computer Simulations of Defect Migration in 3C and 4H-SiC Optical and EPR Signatures of Intrinsic Defects in Ultra High Purity 4H-SiC EPR and Pulsed ENDOR Study of El6 and Related Defects in 4H-SiC Investigations of Possible Nitrogen Participation in the Z1/Z2 Defect in 4H-SiC Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors Evidence for a Deep Two Charge State Defect in High Energy Electron Irradiated 4H-SiC Negative-U-Centers in 4H- and 6H-SiC Detected by Spectral Light Excitation Optically Induced Transitions among Point Defects in High Purity and Vanadium-Doped Semi-Insulating 4H SiC Defects in He+ Irradiated 6H-SiC Probed by DLTS and LTPL Measurements The Influence of Recombination-Induced Migration of Hydrogen on the Formation of VSi-H Complexes in SiC Photo-EPR and Hall Measurements on Undoped High Purity Semi-Insulating 4H-SiC Substrates Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution Investigations of Defects Introduced in 4H-SiC n-Type Epitaxial Layers by Hydrogen DC Plasma Midgap Defects in 4H-, 6H- and 3C-SiC Detected by Deep Level Optical Spectroscopy Annealing Study on Radiation-Induced Defects in 6H-SiC Crystallographic Defects under Surface Morphological Defects of 4H-SiC Homoepitaxial Films Formation of Stacking Faults in Diffused SiC p+/n-/n+ and p+/p-/n+ Diodes Residual Stresses and Stacking Faults in n-Type 4H-SiC Epilayers Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN Diodes Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes SiC Studied Via LEEN and Cathodoluminescence Spectroscopy Properties of the Bound Excitons Associated to the 3838A Line in 4H-SiC and the 4182A Line in 6H-SiC Electrical Transport Properties of n-Type 4H and 6H Silicon Carbide Further Investigation of Silicon Vacancy-Related Luminescence in 4H and 6H SiC Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers Photoluminescence Mapping of a SiC Wafer in Device Processing Spontaneous Polarization of 4H SiC Determined from Optical Emissions of 4H/3C/4H-SiC Quantum Wells Optical Investigation of Stacking Faults and Micro-Crystalline Inclusions In-Low-Doped 4H-SiC Layers Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates Photoluminescence Excitation Spectroscopy on the Donor-Acceptor Pair Luminescence in 4H and 6H SiC Photoluminescence Study of C-H and C-D Centers in 4H SiC Optical Characterization of Full SiC Wafer Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum Nondestructive Defect Characterization of SiC Epilayers and its Significance for SiC Device Research Two-Photon Spectroscopy of 4H-SiC by Using Laser Pulses at Below-Gap Frequencies Raman Imaging Characterization of Structural and Electrical Properties in 4H SiC Raman Scattering by Coupled Phonon-Plasmon Modes Study of the Temperature Induced Polytype Conversion in Cubic CVD SiC by Raman Spectroscopy Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering Micro-Raman Investigation of Growth-Induced Defects in 6H and 4H SiC Crystals Grown by Sublimation Method Deep UV Excitation Raman Spectroscopy of Homoepitaxial 4H-SiC Films Grown by Microwave Plasma Chemical Vapor Deposition Crystal Quality Evaluation of 6H-SiC Layers Grown by Liquid Phase Epitaxy around Micropipes using Micro-Raman Scattering Spectroscopy Low Temperature Annealing of Optical Centres in 4H SiC Isotope Effects on Hydrogen-Related Bound Exciton Spectra in SiC On the Origin of the Below Band-Gap Absorption Bands in n-Type (N) 4H- and 6H-SiC Temperature-Dependence of Zone-Center Phonon Modes in 4H-SiC Brillouin Scattering Studies of Surface Acoustic Waves in SiC Optical Investigation of the Built-In Strain in 3C-SiC Epilayers Specificity of Electron Impact Ionization in Superstructure Silicon Carbide Nonequilibrium Carrier Lifetime and Diffusion Coefficients in 6H-SiC Electrical Characterization of Semi-Insulating 6H-SiC Substrates Impact Ionization Coefficients of 4H-SiC Temperature-Dependent Hall Effect Measurements in Low - Compensated p-Type 4H-SiC Electrochemical C-V Profiling of n-Type 4H-SiC Impurity Conduction Observed in Al-Doped 6H-SiC Anomalous Behavior of van der Pauw Sheet Resistance Measurements on 4H-SiC MOS Inversion Layers with Anisotropy Mobility High Phonon-Drag Thermoelectric Efficiency of SiC at Low Temperatures As-Grown and Process-Related Defects in Schottky Barrier Diodes Fabricated on Bulk Off-Axis n-Type 6H-SiC Impact Ionization in -SiC and Avalanche Photoamplifiers Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers The Nature of the Shallow Boron Acceptor in SiC - Localization versus Effective Mass Theory The Solubility and Defect Equilibrium on the n-Type Dopants Nitrogen and Phosphorus in 4H-SiC: A Theoretical Study Uniform Axial Charge Carrier Concentration in PVT-Grown p-Type 6H SiC by Non-Uniform Distribution of Boron in the Powder Source In-Situ Er-Doping of SiC Bulk Single Crystals Growth of Phosphorous-Doped n-Type 6H-SiC Crystals using a Modified PVT Technique and Phosphine as Source Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt Relationship between Surface Structures and Aluminium Incorporation Behaviour of SiC in Chemical Vapor Deposition Formation of SiC Delta-Doped-Layer Structures by CVD As-Grown 4H-SiC Epilayers with Magnetic Properties Reduction in Al Acceptor Density by Electron Irradiation in Al-Doped 4H-SiC Non-Contact Doping Profiling in Epitaxial SiC Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates Spin-On Doping of Porous SiC with Er Sc Impurity in Silicon Carbide Measurement of Low Level Nitrogen in Silicon Carbide Using SIMS Dilute Aluminium Concentration in 4H-SiC: from SIMS to LTPL Measurements Crystallinity and Photoluminescence Evaluation of Er-Implanted n-Type 4H-SiC Subjected to an Annealing Process Radiotracer Investigation of Gadolinium Induced Deep Levels in Hexagonal Silicon Carbide Analysis of Different Vanadium Charge States in Vanadium Doped 6H-SiC by Low Temperature Optical Absorption and Electron Paramagnetic Resonance Investigation of Electronic States of Pd in 4H-SiC by Means of Radiotracer-DLTS Surface Preparation of 6H-Silicon Carbide Substrates for Growth of High-Quality SiC Epilayers Electro-Chemical Mechanical Polishing of Silicon Carbide Chemi-Mechanical Polishing of On-Axis Semi-Insulating SiC Substrates Surface Modification of 3C-SiC for Good Ni Ohmic Contact Mechanisms in Electrochemical Etching of -SiC Substrates Modification of the Silicon Carbide by Proton Irradiation Etching of SiC with Fluorine ECR Plasma Characterization of 3C-SiC Monocrystals Using Positron Annihilation Spectroscopy Improvement of SiC Wafer Warp by Annealing Comparison of Different Surface Pre-Treatments to n-Type 4H-SiC and their Effect on the Specific Contact Resistance of Ni Ohmic Contacts Structural Characterization of Alloyed Al/Ti and Ti Contacts on SiC Improved AlNi Ohmic Contacts to p-Type SiC Electrical Characterization of Deposited and Oxidized Ta2Si as Dielectric Film for SiC Metal-Insulator-Semiconductor Structures In-Situ Investigation of Carbon Reduction at Ni/4H-SiC Interface Using a Silicon Interlayer The Formation of Low Resistance Ohmic Contacts to 4H-SiC, Circumventing the Need for Post Annealing, Studied by Specific Contact Resistance Measurements and X-Ray Photoelectron Spectroscopy The Basic Parameters of Diffusion Welded Al Schottky Contacts to p- and n-SiC Schottky-Ohmic Transition in Nickel Silicide/SiC-4H System: the Effect of Non Uniform Schottky Barrier Effects of Thermal Treatments on the Structural and Electrical Properties of Ni/Ti Bilayers Schottky Contacts on 6H-SiC Electrical Characterization of Inhomogeneous Ni2/Si/SiC Schottky Contacts Study of TiW/Au Thin Films Metallization Stack for High Temperature and Harsh Environment Devices on 6H Silicon Carbide High Temperature and High Power Stability Investigation of Al-Based Ohmic Contacts to p-Type 4H-SiC Contact Resistivity and Barrier Height of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC Effect of High-Dose Aluminium Implantation on 4H-SiC Oxidation Structural Defects Formed in Al-Implanted and Annealed 4H-SiC Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals Effect of Implantation Temperature on Redistribution of Al in SiC during Annealing Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy Annealing Process of N+-/P+-Ions Coimplanted along with Si+-, C+- or Ne+-Ions into 4H-SiC - Governed by Formation of Electrically Neutral Complexes or by Site-Competition-Effect? Low Sheet Resistance of High-Dose Aluminium Implanted 4H-SiC using (11-20) Face Boron Diffusion in Intrinsic, n-Type and p-Type 4H-SiC Investigation of Two-Stage Activation Annealing of Al-Implanted 4H-SiC Layers Reactive Ion Etching of Silicon Carbide with Patterned Boron Implantation Activation of Implanted Al and Co-Implanted Al/C or Al/Si in 4H-SiC Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap Contribution of X-Ray Diffraction Simulations to Experimental Study of High Energy He Implantation at High Dose in 4H-SiC at Room Temperature Visible Light Laser Irradiation: a Tool for Implantation Damage Reduction SiC Donor Doping by 300 DegreesC P Implantation: Characterization of the Doped Layer Properties in Dependence of the Post-Implantation Annealing Temperature SiC-Based Current Limiter Devices High Voltage (500V-14kV) 4H-SiC Unipolar Bipolar Darlington Transistors for High-Power and High-Temperature Applications SiC Devices for High Voltage High Power Applications First Principles Derivation of Carrier Transport across Metal - SiC Barriers Modeling of the Influence of Schottky Barrier Inhomogeneities on SiC Diode Characteristics Theoretical Investigations of Microwave Characteristics of Tunnett Diodes Made of Silicon Carbide Challenges and First Results of SiC Schottky Diode Manufacturing using a 3-Inch Technology 4H-SiC Power Schottky Diodes. On the Way to Solve the Size Limiting Issues Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation Extraction of the Schottky Barrier Height for Ti/Al Contacts on 4H-SiC from I-V and C-V Measurements Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments P-n Junction Periphery Protection of 4H-SiC Power p-i-n Diodes Using Epitaxy and Dry Etching Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate Fabrication and Characterization of 4H-SiC pn Diode with Field Limiting Ring Current Transport Mechanisms in 4H-SiC PiN Diodes On-Chip Temperature Monitoring of a SiC Current Limiter The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study Low Voltage Silicon Carbide Zener Diode Design, Fabrication and Characterization of 5 kV 4H-SiC p+n Planar Bipolar Diodes Protected by Junction Termination Extension Comparison between Implanted and Epitaxial PiN-Diodes on 4H-Silicon Carbide 4H-SiC p-n Diode using Internal Ring (IR) Termination Technique Numerical Study of Current Crowding Phenomenon in Complementary 4H-SiC JBS Rectifiers Influence of H2 Pre-Treatment on Ni/4H-SiC Schottky Diode Properties The Role of Carrier Lifetime in Forward Bias Degradation of 4H-SiC PiN Diodes High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas Electrical Properties of pn Diodes on 4H-SiC(000-1) C-Face and (11-20) Face Avalanche Multiplication and Breakdown in 4H-SiC Diodes Investigation of Rapid Thermal Annealed pn-Junctions in SiC Ballistic Electron Emission Microscopy Study of p-Type 4H-SiC Defect Influence on the Electrical Properties of 4H-SiC Schottky Diodes Analysis of Structural Defects in the 4H-SiC Epilayers and their Influence on the Electrical Properties Simulation and Prototype Fabrication of Microwave Modulators with 4H-SiC p-i-n Diodes Bulk SiC Devices for High Radiation Environments 2.5KV-30A Inductively Loaded Half-Bridge Inverter Switching using 4H-SiC MPS Free-Wheeling Diodes Design and Implementation of the Optimized Edge Termination in 1.8 kV 4H-SiC PiN Diodes High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift 4,308V, 20.9 m -cm2 4H-SiC MPS Diodes Based on a 30 m Drift Layer Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices Extrinsic Base Design of SiC Bipolar Transistors Analysis of Power Dissipation and High Temperature Operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm2 Power Density Handling Ability Simple Self-Aligned Fabrication Process for Silicon Carbide Static Induction Transistors Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation The First 4H-SiC BJT-Based 20 kHz, 7HP PWM DC-to-AC Inverter for Induction Motor Control Applications SiC BJT Technology for Power Switching and RF Applications Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs High Power (500V-70A) and High Gain(44-47) 4H-SiC Bipolar Junction Transistors Assessment of "Normally On" and "Quasi On" SiC VJFET's in Half-Bridge Circuits 1,530V, 17.5m cm2 Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization 4,340V, 40 m cm2 Normally-Off 4H-SiC VJFET A 500V, Very High Current Gain ( =1517) 4H-SiC Bipolar Darlington Transistor A High Voltage (1570V) 4H-SiC Bipolar Darlington with Current Gain >640 and Tested in a Half-Bridge Inverter up to 20A at VBus=900V A High Voltage (1,750V) and High Current Gain ( =24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 m) Drift layer Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SiC MESFETs Fabrication and Characterization of 4H-SiC Planar MESFET Using Ion- Implantation Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates 600V 4H-SiC RESURF-Type JFET Influence of Buffer Layer on DC and RF Performance of 4H SiC MESFET Design of 1.7 to 14 kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power Switch RF Performance and Reliability of SiC MESFETs on High Purity Semi-Insulating Substrates High Frequency Measurements and Simulations of SiC MESFETs up to 250 DegreesC 6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETs A 600V Deep-Implanted Gate Vertical JFET Single Contact-Material MESFETs on 4H-SiC DC and RF Performance of Insulating Gate 4H-SiC Depletion Mode Field Effect Transistors Investigation of the Scalability of 4H-SiC MESFETs for High Frequency Applications The Theoretical Study on Total Power Dissipation of SiC Devices in Comparison with Si Devices Scattering Probabilities for Multiband Hole States at High Electric Fields and High Collision Rates in 4H-SiC Edge Termination Technique for SiC Power Devices BIFET - a Novel Bipolar SiC Switch for High Voltage Power Electronics A Review of SiC Power Switch: Achievements, Difficulties and Perspectives A Highly Effective Edge Termination Design for SiC Planar High Power Devices Optimization of JTE Edge Terminations for 10 kV Power Devices in 4H-SiC The SiC-SiO2 Interface: A Unique Advantage of SiC as a Wide Energy-Gap Material A Long-Term Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer Recent Advances in (0001) 4H-SiC MOS Device Technology Characterizations of SiC/SiO2 Interface Quality Toward High Power MOSFETs Realization Hall Effect Measurements in SiC Buried-Channel MOS Devices First-Principles Study of O Adsorption at SiC Surface Interface States in Abrupt SiO2/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters Investigation of SiO2/SiC Interface using Positron Annihilation Technique A Comparison between SiO2/4H-SiC Interface Traps on (0001) and (11-20) Faces Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2 Initial Oxidation of 6H-SiC (0001) ( 3 x 3)-R30 Degrees and 3 x 3 Surfaces Studied by AES and RHEED Initial Stages of Thermal Oxidation of 4H-SiC (11-20) Studied by Photoelectron Spectroscopy Oxidation Studies of Non-Polar 4H-SiC Surfaces Carbon-Terminated 3C-SiC(100) Surface Oxidation Studied by High-Resolution Core Level Photoemission Spectroscopy using Synchrotron Radiation A Photoemission Study of Polar and Non-Polar SiC Surfaces Oxidized in N2O Radical Nitridation of Ultra-Thin SiO2/SiC Structure Ellipsometric Study of Thermal Silicon Oxide and Sacrificial Silicon Oxide on 4H-SiC Photoemission Spectroscopic Studies on Oxide/SiC Interfaces Formed by Dry and Pyrogenic Oxidation Diluted Nitric Oxide (NO) Annealing of SiO2/4H-SiC in Cold-Wall Oxidation Furnace Thermal Oxidation of 4H-Silicon Using the Afterglow Method Fast Oxidation of 4H-SiC at Room Temperature by Electrochemical Methods Characterization of a Thermal Oxidation Process on SiC Preamorphized by Ar Ion Implantation Electronic Properties of SiON/HfO2 Insulating Stacks on 4H-SiC (0001) Characterization of Non-Equilibrium Charge of MOS Capacitors on p-Type 4H SiC Structural and Electronic Properties of the 6H-SiC(0001)/Al2O3 Interface Prepared by Atomic Layer Deposition Development of Sol-Gel MgO Thin Films for SiC Insulation Applications Effect of In-Situ Chemical Surface Treatments on AlN/SiC Interfacial Contamination Comparison of the Electrical Channel Properties between Dry- and Wet- Oxidized 6H-SiC MOSFETs Investigated by Hall Effect Development of 10 kV 4H-SiC Power DMOSFETs Static and Dynamic Characterization of 20A, 600V SiC MOS-Enhanced JFET Self-Aligned Short-Channel Vertical Power DMOSFETs in 4H-SiC Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation Annealing A P-Channel MOSFET on 4H-SiC Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on 3C-SiC 4H-SiC MOSFETs with a Novel Channel Structure (Sandwiched Channel MOSFET) 930, 170 .cm2 Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO Annealing 4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm2/Vs Fabrication of 4H-SiC Double-Epitaxial MOSFETs Enhancement of Inversion Channel Mobility in 4H-SiC MOSFETs using a Gate Oxide Grown in Nitrous Oxide (N2O) High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N2O Ambient Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 K Evaluation of Trench Oxide Protection Techniques on Ultra High Voltage (10 kV) 4H-SiC UMOSFETs SiC JMOSFETs for High-Temperature Stable Circuit Operation Advanced Processing Techniques for Silicon Carbide MEMS and NEMS Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC Porous Silicon Carbide as a Membrane for Implantable Biosensors Triangular Pore Formation in Highly Doped n-Type 4H SiC Porous Structure of Anodized p-Type 6H SiC Vibrational and Emission Properties of Porous 6H-SiC Porous SiC for HT Chemical Sensing Devices: an Assessment of its Thermal Stability SiC Base Micro-Probe for Myocardial Ischemia Monitoring Electrical Characterisation of the Gamma and UV Irradiated Epitaxial 1.2 kV 4H-SiC PiN Diodes Demonstration of the First 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodector Towards the Fabrication and Measurement of High Sensitivity SiC-UV Detectors with Oxide Ramp Termination Hydrogen Gas Sensors using 3C-SiC/Si Epitaxial Layers Electrical and Optical Characterization of Electron Irradiated X Rays Detectors Based on 4H-SiC Epitaxial Layers Substrate Bias Amplification of a SiC Junction Field Effect Transistor with a Catalytic Gate Electrode Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded Substrates Formation of 3C-SiC Films Embedded in SiO2 by Sacrificial Oxidation Young's Modulus and Residual Stress of Polycrystalline 3C-SiC Films Grown by LPCVD and Measured by the Load-Deflection Technique Characterization of Polycrystalline SiC Thin Films for MEMS Applications using Surface Micromachined Devices Reaction Bonding of Microstructured Silicon Carbide using Polymer and Silicon Thin Film Fabrication of Suspended Nanomechanical Structures from Bulk 6H-SiC Substrates Sublimation Growth of Bulk AlN Crystals: Process Temperature and Growth Rate Structural, Optical and Electrical Properties of Bulk AlN Crystals Grown by PVT Experimental and Theoretical Analysis of Sublimation Growth of Bulk AlN Crystals X-Ray Photoelectron Spectroscopy of Nitride Layer on SiC by Thermal Nitridation Using NH3 Plasma-Assisted Molecular Beam Epitaxial Growth of AlN Films on Vicinal Sapphire (0001) Substrates Growth of GaN/AlN Quantum Dots on SiC (000-1) by Plasma-Assisted MBE Control of the 2D/3D Transition of Cubic GaN/AlN Nanostructures on 3C-SiC Epilayers In-Situ Monitoring of AlN Crystal Growth on 6H-SiC by the Use of a Pyrometer Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam Epitaxy Growth of N-Face Polarity III-Nitride Heterostructures on C-Face 4H-SiC by Plasma-Assisted MBE Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy Growth and Field Emission of GaN Nanowires Intraband Transitions on GaN/AlN Quantum Wells Grown on Sapphire (0001) and 6H-SiC Substrates Photoluminescence of GaN/AlN Quantum Dots Grown on SiC Substrates Growth of GaN Films on Porous 4H-SiC Substrate by Metal-Organic Chemical Vapor Deposition X-Ray Diffraction Imaging of GaN-Based Heterostructures on SiC Effects of Crystallinity on Hydrogen Exfoliation of GaN Layers Radiotracer Spectroscopy on Group II Acceptors in GaN Properties of the 3.4 eV Luminescence Band in GaN and its Relation to Stacking Faults An Ab Initio Study of Intrinsic Stacking Faults in GaN AlGaN / GaN HEMT Structures Grown on SiCOI Wafers Obtained by the Smart CutTM Technology Thermal Characterisation of AlGaN/GaN HEMTs using Micro-Raman Scattering Spectroscopy and Pulsed I-V Measurements High CW Power 0.3 m Gate AlGaN/GaN HEMTs Grown by MBE on Sapphire Self-Aligned N+ Polysilicon-Gate GaN MOSFETs

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詳細情報

• NII書誌ID(NCID): BA71631810
• ISBN:
  • 0878499431
• 出版国コード: sz
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Uetikon-Zuerich
• ページ数/冊数: 2 v.(lxxvi, 1660 p.)
• 大きさ: 26 cm
• 件名:
  • LCSH : Silicon carbide -- Congresses
  • LCSH : Nitrides -- Congresses
  • LCSH : Crystal growth -- Congresses
  • LCSH : Silicon-carbide thin films -- Congresses
  • FREE : Física (congressos) larpcal
• 親書誌ID:
  • BA00294222