Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003
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書誌事項
Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003
(Materials science forum, v. 457-460)
Trans Tech Publications, c2004
- set
- v. 1
- v. 2
- タイトル別名
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ICSCRM2003
大学図書館所蔵 全2件
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注記
Includes bibliographical references and index
内容説明・目次
内容説明
Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
目次
Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances
SiC Crystal Growth by HTCVD
Effects of Ionicity on Defect Physics of Wide-Band-Gap Semiconductors
Possibility of Power Electronics Paradigm Shift with Wide Band Gap Semiconductors
High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment
Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices
Large Diameter 4H-SiC Substrates for Commercial Power Applications
Investigation of Graphite Particle Inclusions in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique
Study of Polytype Switching vs. Micropipes in PVT Grown SiC Single Crystals
Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide
Thermodynamic Analysis of the Production of Silicon Carbide via Silicon Dioxide and Carbon
Faceted Growth of SiC Bulk Crystals
Theoretical Analysis of the Mass Transport in the Powder Charge in Long-Term Bulk SiC Growth
Free Growth of 4H-SiC by Sublimation Method
Advanced PVT Growth of 2 & 3-Inch Diameter 6H SiC Crystals
Radial Expansion Growth of SiC Single Crystals with Higher Crystal Quality
Growth and Characterization of SiC Bulk Crystals Grown on an Off-Oriented (11-20) Seed Crystal
Growth of Bulk SiC by Halide Chemical Vapor Deposition
Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method
Effect of Thermal Field on Interface Step Structures during PVT Growth of (0001)Si 6H-SiC
Large Diameter and Long Length Growth of SiC Single Crystal
Effect of Crucible Design on the Shape and the Quality in 6H-SiC Crystals Grown by Physical Vapor Transport
Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {03-38} Substrate and Defect Analysis
Natural Crystal Habit and Preferential Growth Directions during PVT of Silicon Carbide
High Quality SiC Bulk Growth by Sublimation Method using Elemental Silicon and Carbon Powder as SiC Source Materials
Flux Growth of SiC Crystals from Eutectic Melt SiC-B4C
Solution Growth of Self-Standing 6H-SiC Single Crystal Using Metal Solvent
The Effect of a Periodic Movement on the Die of the Bottom Line of the Melt/Gas Meniscus in the Case of Silicon Filaments Grown from the Melt in a Vacuum by Edge-Defined Film-Fed Growth Method
Continuous Growth of SiC Single Crystal by the Spray Dried Powder Made of Ultra-Fine Particle Precursors
Comparison between Various Chemical Systems for the CVD Step in the CF-PVT Crystal Growth Method
In Situ SiC Feeding by Chemical Vapor Deposition for Bulk Growth
Stable Parameter Range for 3C-SiC Sublimation Growth on Graphite
Microstructure of Cubic SiC Grown by the Modified Lely-Method
Growth of 3C-SiC Bulk Material by the Modified Lely Method
Characterization of SiC Epitaxial Structures using High-Resolution X-Ray Diffraction Techniques
Surface Mechanisms in Homoepitaxial Growth on -SiC{0001}-Vicinal Faces
Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers
Flash Lamp Supported Deposition of 3C-SiC (FLASiC) - a Promising Technique to Produce High Quality Cubic SiC Layers
Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications
Selective Growth of 4H-SiC on 4H-SiC Substrates using a High Temperature Mask
Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition
Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD
High-Speed Growth of High-Purity Epitaxial Layers with Specular Surface on 4H-SiC(000-1) Face
Growth of Device Quality 4H-SiC High Velocity Epitaxy
Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition
4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition
Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth
Comparative Studies of <0001> 4H-SiC Layers Grown with either Silane or HexaMethylDiSilane / Propane Precursor Systems
Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8 Degrees Off-Axis 4H-SiC(0001) Substrates and their Characterization
Uniformity Improvement in SiC Epitaxial Growth by using Si-Condensation
Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut Directions
Homoepitaxial Growth of Al-Doped 4H-SiC Using Bis-Trimethylsilylmethane Precursor
Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC Substrates
Vapour-Liquid-Solid Induced Localised Growth of Heavily Al Doped 4H-SiC on Patterned Substrate
Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism
Simple Model for Calculation of SiC Epitaxial Layers Growth Rate in Vacuum
Modelling of SiC-Matrix Composite Formation by Thermal Gradient Chemical Vapour Infiltration
Pendeo Epitaxial Growth of 3C-SiC on Si Substrates
Comparative Growth Behavior of 3C-SiC Mesa Heterofilms with and without Extended Defects
Checker-Board Carbonization for Control and Reduction of the Mean Curvature of 3C-SiC Layers Grown on Si(100) Substrates
Growth of SiC Films using Tetraethylsilane
Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls"
Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-Epitaxy
Potential of HMDS/C3H8 Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100)
Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor Deposition
Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001) Substrate by Sublimation Epitaxy
Structure and Composition of 3C-SiC:Ge Alloys Grown on Si (111) Substrates by SSMBE
Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111)
Stress Control in 3C-SiC Films Grown on Si(111)
Development of a High-Throughput LPCVD Process for Depositing Low Stress Poly-SiC
Low Temperature ECR-PECVD Microcrystalline SiC Growth by Pulsed Gas Flows
Investigation of Thick 3C-SiC Films Re-Grown on Thin 35 nm "Flash Lamp Annealed" 3C-SiC Layers
Low Temperature (320 DegreesC) Deposition of Hydrogenated Microcrystalline Cubic Silicon Carbide Thin Films
Effect of Carbonization in Bias-Enhanced Nucleation Step during Highly-Oriented Growth of Diamond Films on 6H-SiC(0001) Substrate
Formation of SiC/Si Multilayer Structures on Si(100) by Supersonic Free Jets of Single Gas Source CH3SiH3
Growth of SiC Nanorods and Microcrystals by Carbon Nanotubes-Confined Reaction
Modelling and Regrowth Mechanisms of Flashlamp Processing of SiC-on-Silicon Heterostructures
Structural Defects in SiC Crystals Investigated by High Energy X-Ray Diffraction
TEM Observations of 4H-SiC Deformed at Room Temperature and 150 DegreesC
TEM Studies on the Initial Stage of Seeded Solution Growth of 6H-SiC using Metal Solvent
Structural Characterization of Thin 3C-SiC Films Annealed by the Flash Lamp Process
Study of Dislocation Mobility in 4H SiC by X-Ray Transmission Topography, Chemical Etching and Transmission Electron Microscopy
TEM of Dislocations in Forward-Biased 4H-SiC PiN Diodes
X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface
Structural Transformation of Dislocated Micropipes in Silicon Carbide
Deformation of 4H-SiC Single Crystals Oriented for Prism Slip
Inelastic Stress Relaxation in Single Crystal SiC Substrates
Dependence of Micropipe Dissociation on Surface Orientation
Analysis of Threading Dislocations in Wide-Bandgap Hexagonal Semiconductors by Energetic Approach
Electron Back Scattering Diffraction (EBSD) as a Tool for the Investigation of 3C-SiC Nucleation and Growth on 6H or 4H
Reconstruction of Cleaved 6H-SiC Surfaces
The Atomic Structure of the Hydrogen Saturated a-Planes of 4H-SiC
H-Induced Si-Rich 3C-Si(100) 3x2 Surface Metallization
Morphological Evolution of SiC(0001) Surfaces without Ambient Gas by High Temperature Annealing in High-Vacuum
SiC Surface Nanostructures Induced by Self-Ordering of Nano-Facets
Dynamic of Laser Ablation in SiC
Tailoring the SiC Subsurface Stacking by the Chemical Potential
Growth of Ultrathin Ag Films on 4H-SiC(0001)
Wettability Study of SiC in Correlation with XPS Analysis
Interface Electronic Structures of Transition Metal(Cr, Fe) on 6H(4H)-SiC(0001)Si Face by Soft X-Ray Fluorescence Spectroscopy
Modification of 6H-SiC Surface Defect Structure during Hydrogen Etching
Defects in High-Purity Semi-Insulating SiC
Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC
A Theoretical Study of Carbon Clusters in SiC: a Sink and a Source of Carbon Interstitials
Density Functional Based Modelling of 30 Degrees Partial Dislocations in SiC
Atomic Computer Simulations of Defect Migration in 3C and 4H-SiC
Optical and EPR Signatures of Intrinsic Defects in Ultra High Purity 4H-SiC
EPR and Pulsed ENDOR Study of El6 and Related Defects in 4H-SiC
Investigations of Possible Nitrogen Participation in the Z1/Z2 Defect in 4H-SiC
Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC
Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors
Evidence for a Deep Two Charge State Defect in High Energy Electron Irradiated 4H-SiC
Negative-U-Centers in 4H- and 6H-SiC Detected by Spectral Light Excitation
Optically Induced Transitions among Point Defects in High Purity and Vanadium-Doped Semi-Insulating 4H SiC
Defects in He+ Irradiated 6H-SiC Probed by DLTS and LTPL Measurements
The Influence of Recombination-Induced Migration of Hydrogen on the Formation of VSi-H Complexes in SiC
Photo-EPR and Hall Measurements on Undoped High Purity Semi-Insulating 4H-SiC Substrates
Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution
Investigations of Defects Introduced in 4H-SiC n-Type Epitaxial Layers by Hydrogen DC Plasma
Midgap Defects in 4H-, 6H- and 3C-SiC Detected by Deep Level Optical Spectroscopy
Annealing Study on Radiation-Induced Defects in 6H-SiC
Crystallographic Defects under Surface Morphological Defects of 4H-SiC Homoepitaxial Films
Formation of Stacking Faults in Diffused SiC p+/n-/n+ and p+/p-/n+ Diodes
Residual Stresses and Stacking Faults in n-Type 4H-SiC Epilayers
Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN Diodes
Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes
SiC Studied Via LEEN and Cathodoluminescence Spectroscopy
Properties of the Bound Excitons Associated to the 3838A Line in 4H-SiC and the 4182A Line in 6H-SiC
Electrical Transport Properties of n-Type 4H and 6H Silicon Carbide
Further Investigation of Silicon Vacancy-Related Luminescence in 4H and 6H SiC
Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers
Photoluminescence Mapping of a SiC Wafer in Device Processing
Spontaneous Polarization of 4H SiC Determined from Optical Emissions of 4H/3C/4H-SiC Quantum Wells
Optical Investigation of Stacking Faults and Micro-Crystalline Inclusions In-Low-Doped 4H-SiC Layers
Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates
Photoluminescence Excitation Spectroscopy on the Donor-Acceptor Pair Luminescence in 4H and 6H SiC
Photoluminescence Study of C-H and C-D Centers in 4H SiC
Optical Characterization of Full SiC Wafer
Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum
Nondestructive Defect Characterization of SiC Epilayers and its Significance for SiC Device Research
Two-Photon Spectroscopy of 4H-SiC by Using Laser Pulses at Below-Gap Frequencies
Raman Imaging Characterization of Structural and Electrical Properties in 4H SiC
Raman Scattering by Coupled Phonon-Plasmon Modes
Study of the Temperature Induced Polytype Conversion in Cubic CVD SiC by Raman Spectroscopy
Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering
Micro-Raman Investigation of Growth-Induced Defects in 6H and 4H SiC Crystals Grown by Sublimation Method
Deep UV Excitation Raman Spectroscopy of Homoepitaxial 4H-SiC Films Grown by Microwave Plasma Chemical Vapor Deposition
Crystal Quality Evaluation of 6H-SiC Layers Grown by Liquid Phase Epitaxy around Micropipes using Micro-Raman Scattering Spectroscopy
Low Temperature Annealing of Optical Centres in 4H SiC
Isotope Effects on Hydrogen-Related Bound Exciton Spectra in SiC
On the Origin of the Below Band-Gap Absorption Bands in n-Type (N) 4H- and 6H-SiC
Temperature-Dependence of Zone-Center Phonon Modes in 4H-SiC
Brillouin Scattering Studies of Surface Acoustic Waves in SiC
Optical Investigation of the Built-In Strain in 3C-SiC Epilayers
Specificity of Electron Impact Ionization in Superstructure Silicon Carbide
Nonequilibrium Carrier Lifetime and Diffusion Coefficients in 6H-SiC
Electrical Characterization of Semi-Insulating 6H-SiC Substrates
Impact Ionization Coefficients of 4H-SiC
Temperature-Dependent Hall Effect Measurements in Low - Compensated p-Type 4H-SiC
Electrochemical C-V Profiling of n-Type 4H-SiC
Impurity Conduction Observed in Al-Doped 6H-SiC
Anomalous Behavior of van der Pauw Sheet Resistance Measurements on 4H-SiC MOS Inversion Layers with Anisotropy Mobility
High Phonon-Drag Thermoelectric Efficiency of SiC at Low Temperatures
As-Grown and Process-Related Defects in Schottky Barrier Diodes Fabricated on Bulk Off-Axis n-Type 6H-SiC
Impact Ionization in -SiC and Avalanche Photoamplifiers
Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers
The Nature of the Shallow Boron Acceptor in SiC - Localization versus Effective Mass Theory
The Solubility and Defect Equilibrium on the n-Type Dopants Nitrogen and Phosphorus in 4H-SiC: A Theoretical Study
Uniform Axial Charge Carrier Concentration in PVT-Grown p-Type 6H SiC by Non-Uniform Distribution of Boron in the Powder Source
In-Situ Er-Doping of SiC Bulk Single Crystals
Growth of Phosphorous-Doped n-Type 6H-SiC Crystals using a Modified PVT Technique and Phosphine as Source
Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth
Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt
Relationship between Surface Structures and Aluminium Incorporation Behaviour of SiC in Chemical Vapor Deposition
Formation of SiC Delta-Doped-Layer Structures by CVD
As-Grown 4H-SiC Epilayers with Magnetic Properties
Reduction in Al Acceptor Density by Electron Irradiation in Al-Doped 4H-SiC
Non-Contact Doping Profiling in Epitaxial SiC
Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates
Spin-On Doping of Porous SiC with Er
Sc Impurity in Silicon Carbide
Measurement of Low Level Nitrogen in Silicon Carbide Using SIMS
Dilute Aluminium Concentration in 4H-SiC: from SIMS to LTPL Measurements
Crystallinity and Photoluminescence Evaluation of Er-Implanted n-Type 4H-SiC Subjected to an Annealing Process
Radiotracer Investigation of Gadolinium Induced Deep Levels in Hexagonal Silicon Carbide
Analysis of Different Vanadium Charge States in Vanadium Doped 6H-SiC by Low Temperature Optical Absorption and Electron Paramagnetic Resonance
Investigation of Electronic States of Pd in 4H-SiC by Means of Radiotracer-DLTS
Surface Preparation of 6H-Silicon Carbide Substrates for Growth of High-Quality SiC Epilayers
Electro-Chemical Mechanical Polishing of Silicon Carbide
Chemi-Mechanical Polishing of On-Axis Semi-Insulating SiC Substrates
Surface Modification of 3C-SiC for Good Ni Ohmic Contact
Mechanisms in Electrochemical Etching of -SiC Substrates
Modification of the Silicon Carbide by Proton Irradiation
Etching of SiC with Fluorine ECR Plasma
Characterization of 3C-SiC Monocrystals Using Positron Annihilation Spectroscopy
Improvement of SiC Wafer Warp by Annealing
Comparison of Different Surface Pre-Treatments to n-Type 4H-SiC and their Effect on the Specific Contact Resistance of Ni Ohmic Contacts
Structural Characterization of Alloyed Al/Ti and Ti Contacts on SiC
Improved AlNi Ohmic Contacts to p-Type SiC
Electrical Characterization of Deposited and Oxidized Ta2Si as Dielectric Film for SiC Metal-Insulator-Semiconductor Structures
In-Situ Investigation of Carbon Reduction at Ni/4H-SiC Interface Using a Silicon Interlayer
The Formation of Low Resistance Ohmic Contacts to 4H-SiC, Circumventing the Need for Post Annealing, Studied by Specific Contact Resistance Measurements and X-Ray Photoelectron Spectroscopy
The Basic Parameters of Diffusion Welded Al Schottky Contacts to p- and n-SiC
Schottky-Ohmic Transition in Nickel Silicide/SiC-4H System: the Effect of Non Uniform Schottky Barrier
Effects of Thermal Treatments on the Structural and Electrical Properties of Ni/Ti Bilayers Schottky Contacts on 6H-SiC
Electrical Characterization of Inhomogeneous Ni2/Si/SiC Schottky Contacts
Study of TiW/Au Thin Films Metallization Stack for High Temperature and Harsh Environment Devices on 6H Silicon Carbide
High Temperature and High Power Stability Investigation of Al-Based Ohmic Contacts to p-Type 4H-SiC
Contact Resistivity and Barrier Height of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC
Effect of High-Dose Aluminium Implantation on 4H-SiC Oxidation
Structural Defects Formed in Al-Implanted and Annealed 4H-SiC
Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals
Effect of Implantation Temperature on Redistribution of Al in SiC during Annealing
Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC
Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy
Annealing Process of N+-/P+-Ions Coimplanted along with Si+-, C+- or Ne+-Ions into 4H-SiC - Governed by Formation of Electrically Neutral Complexes or by Site-Competition-Effect?
Low Sheet Resistance of High-Dose Aluminium Implanted 4H-SiC using (11-20) Face
Boron Diffusion in Intrinsic, n-Type and p-Type 4H-SiC
Investigation of Two-Stage Activation Annealing of Al-Implanted 4H-SiC Layers
Reactive Ion Etching of Silicon Carbide with Patterned Boron Implantation
Activation of Implanted Al and Co-Implanted Al/C or Al/Si in 4H-SiC
Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap
Contribution of X-Ray Diffraction Simulations to Experimental Study of High Energy He Implantation at High Dose in 4H-SiC at Room Temperature
Visible Light Laser Irradiation: a Tool for Implantation Damage Reduction
SiC Donor Doping by 300 DegreesC P Implantation: Characterization of the Doped Layer Properties in Dependence of the Post-Implantation Annealing Temperature
SiC-Based Current Limiter Devices
High Voltage (500V-14kV) 4H-SiC Unipolar Bipolar Darlington Transistors for High-Power and High-Temperature Applications
SiC Devices for High Voltage High Power Applications
First Principles Derivation of Carrier Transport across Metal - SiC Barriers
Modeling of the Influence of Schottky Barrier Inhomogeneities on SiC Diode Characteristics
Theoretical Investigations of Microwave Characteristics of Tunnett Diodes Made of Silicon Carbide
Challenges and First Results of SiC Schottky Diode Manufacturing using a 3-Inch Technology
4H-SiC Power Schottky Diodes. On the Way to Solve the Size Limiting Issues
Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation
Extraction of the Schottky Barrier Height for Ti/Al Contacts on 4H-SiC from I-V and C-V Measurements
Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature
Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments
P-n Junction Periphery Protection of 4H-SiC Power p-i-n Diodes Using Epitaxy and Dry Etching
Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate
Fabrication and Characterization of 4H-SiC pn Diode with Field Limiting Ring
Current Transport Mechanisms in 4H-SiC PiN Diodes
On-Chip Temperature Monitoring of a SiC Current Limiter
The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study
Low Voltage Silicon Carbide Zener Diode
Design, Fabrication and Characterization of 5 kV 4H-SiC p+n Planar Bipolar Diodes Protected by Junction Termination Extension
Comparison between Implanted and Epitaxial PiN-Diodes on 4H-Silicon Carbide
4H-SiC p-n Diode using Internal Ring (IR) Termination Technique
Numerical Study of Current Crowding Phenomenon in Complementary 4H-SiC JBS Rectifiers
Influence of H2 Pre-Treatment on Ni/4H-SiC Schottky Diode Properties
The Role of Carrier Lifetime in Forward Bias Degradation of 4H-SiC PiN Diodes
High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate
High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas
Electrical Properties of pn Diodes on 4H-SiC(000-1) C-Face and (11-20) Face
Avalanche Multiplication and Breakdown in 4H-SiC Diodes
Investigation of Rapid Thermal Annealed pn-Junctions in SiC
Ballistic Electron Emission Microscopy Study of p-Type 4H-SiC
Defect Influence on the Electrical Properties of 4H-SiC Schottky Diodes
Analysis of Structural Defects in the 4H-SiC Epilayers and their Influence on the Electrical Properties
Simulation and Prototype Fabrication of Microwave Modulators with 4H-SiC p-i-n Diodes
Bulk SiC Devices for High Radiation Environments
2.5KV-30A Inductively Loaded Half-Bridge Inverter Switching using 4H-SiC MPS Free-Wheeling Diodes
Design and Implementation of the Optimized Edge Termination in 1.8 kV 4H-SiC PiN Diodes
High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift
4,308V, 20.9 m -cm2 4H-SiC MPS Diodes Based on a 30 m Drift Layer
Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices
Extrinsic Base Design of SiC Bipolar Transistors
Analysis of Power Dissipation and High Temperature Operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm2 Power Density Handling Ability
Simple Self-Aligned Fabrication Process for Silicon Carbide Static Induction Transistors
Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor
Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation
The First 4H-SiC BJT-Based 20 kHz, 7HP PWM DC-to-AC Inverter for Induction Motor Control Applications
SiC BJT Technology for Power Switching and RF Applications
Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs
High Power (500V-70A) and High Gain(44-47) 4H-SiC Bipolar Junction Transistors
Assessment of "Normally On" and "Quasi On" SiC VJFET's in Half-Bridge Circuits
1,530V, 17.5m cm2 Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization
4,340V, 40 m cm2 Normally-Off 4H-SiC VJFET
A 500V, Very High Current Gain ( =1517) 4H-SiC Bipolar Darlington Transistor
A High Voltage (1570V) 4H-SiC Bipolar Darlington with Current Gain >640 and Tested in a Half-Bridge Inverter up to 20A at VBus=900V
A High Voltage (1,750V) and High Current Gain ( =24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 m) Drift layer
Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SiC MESFETs
Fabrication and Characterization of 4H-SiC Planar MESFET Using Ion- Implantation
Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates
600V 4H-SiC RESURF-Type JFET
Influence of Buffer Layer on DC and RF Performance of 4H SiC MESFET
Design of 1.7 to 14 kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC
Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power Switch
RF Performance and Reliability of SiC MESFETs on High Purity Semi-Insulating Substrates
High Frequency Measurements and Simulations of SiC MESFETs up to 250 DegreesC
6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETs
A 600V Deep-Implanted Gate Vertical JFET
Single Contact-Material MESFETs on 4H-SiC
DC and RF Performance of Insulating Gate 4H-SiC Depletion Mode Field Effect Transistors
Investigation of the Scalability of 4H-SiC MESFETs for High Frequency Applications
The Theoretical Study on Total Power Dissipation of SiC Devices in Comparison with Si Devices
Scattering Probabilities for Multiband Hole States at High Electric Fields and High Collision Rates in 4H-SiC
Edge Termination Technique for SiC Power Devices
BIFET - a Novel Bipolar SiC Switch for High Voltage Power Electronics
A Review of SiC Power Switch: Achievements, Difficulties and Perspectives
A Highly Effective Edge Termination Design for SiC Planar High Power Devices
Optimization of JTE Edge Terminations for 10 kV Power Devices in 4H-SiC
The SiC-SiO2 Interface: A Unique Advantage of SiC as a Wide Energy-Gap Material
A Long-Term Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
Recent Advances in (0001) 4H-SiC MOS Device Technology
Characterizations of SiC/SiO2 Interface Quality Toward High Power MOSFETs Realization
Hall Effect Measurements in SiC Buried-Channel MOS Devices
First-Principles Study of O Adsorption at SiC Surface
Interface States in Abrupt SiO2/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters
Investigation of SiO2/SiC Interface using Positron Annihilation Technique
A Comparison between SiO2/4H-SiC Interface Traps on (0001) and (11-20) Faces
Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2
Initial Oxidation of 6H-SiC (0001) ( 3 x 3)-R30 Degrees and 3 x 3 Surfaces Studied by AES and RHEED
Initial Stages of Thermal Oxidation of 4H-SiC (11-20) Studied by Photoelectron Spectroscopy
Oxidation Studies of Non-Polar 4H-SiC Surfaces
Carbon-Terminated 3C-SiC(100) Surface Oxidation Studied by High-Resolution Core Level Photoemission Spectroscopy using Synchrotron Radiation
A Photoemission Study of Polar and Non-Polar SiC Surfaces Oxidized in N2O
Radical Nitridation of Ultra-Thin SiO2/SiC Structure
Ellipsometric Study of Thermal Silicon Oxide and Sacrificial Silicon Oxide on 4H-SiC
Photoemission Spectroscopic Studies on Oxide/SiC Interfaces Formed by Dry and Pyrogenic Oxidation
Diluted Nitric Oxide (NO) Annealing of SiO2/4H-SiC in Cold-Wall Oxidation Furnace
Thermal Oxidation of 4H-Silicon Using the Afterglow Method
Fast Oxidation of 4H-SiC at Room Temperature by Electrochemical Methods
Characterization of a Thermal Oxidation Process on SiC Preamorphized by Ar Ion Implantation
Electronic Properties of SiON/HfO2 Insulating Stacks on 4H-SiC (0001)
Characterization of Non-Equilibrium Charge of MOS Capacitors on p-Type 4H SiC
Structural and Electronic Properties of the 6H-SiC(0001)/Al2O3 Interface Prepared by Atomic Layer Deposition
Development of Sol-Gel MgO Thin Films for SiC Insulation Applications
Effect of In-Situ Chemical Surface Treatments on AlN/SiC Interfacial Contamination
Comparison of the Electrical Channel Properties between Dry- and Wet- Oxidized 6H-SiC MOSFETs Investigated by Hall Effect
Development of 10 kV 4H-SiC Power DMOSFETs
Static and Dynamic Characterization of 20A, 600V SiC MOS-Enhanced JFET
Self-Aligned Short-Channel Vertical Power DMOSFETs in 4H-SiC
Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation Annealing
A P-Channel MOSFET on 4H-SiC
Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on 3C-SiC
4H-SiC MOSFETs with a Novel Channel Structure (Sandwiched Channel MOSFET)
930, 170 .cm2 Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO Annealing
4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm2/Vs
Fabrication of 4H-SiC Double-Epitaxial MOSFETs
Enhancement of Inversion Channel Mobility in 4H-SiC MOSFETs using a Gate Oxide Grown in Nitrous Oxide (N2O)
High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N2O Ambient
Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs
Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 K
Evaluation of Trench Oxide Protection Techniques on Ultra High Voltage (10 kV) 4H-SiC UMOSFETs
SiC JMOSFETs for High-Temperature Stable Circuit Operation
Advanced Processing Techniques for Silicon Carbide MEMS and NEMS
Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC
Porous Silicon Carbide as a Membrane for Implantable Biosensors
Triangular Pore Formation in Highly Doped n-Type 4H SiC
Porous Structure of Anodized p-Type 6H SiC
Vibrational and Emission Properties of Porous 6H-SiC
Porous SiC for HT Chemical Sensing Devices: an Assessment of its Thermal Stability
SiC Base Micro-Probe for Myocardial Ischemia Monitoring
Electrical Characterisation of the Gamma and UV Irradiated Epitaxial 1.2 kV 4H-SiC PiN Diodes
Demonstration of the First 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodector
Towards the Fabrication and Measurement of High Sensitivity SiC-UV Detectors with Oxide Ramp Termination
Hydrogen Gas Sensors using 3C-SiC/Si Epitaxial Layers
Electrical and Optical Characterization of Electron Irradiated X Rays Detectors Based on 4H-SiC Epitaxial Layers
Substrate Bias Amplification of a SiC Junction Field Effect Transistor with a Catalytic Gate Electrode
Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded Substrates
Formation of 3C-SiC Films Embedded in SiO2 by Sacrificial Oxidation
Young's Modulus and Residual Stress of Polycrystalline 3C-SiC Films Grown by LPCVD and Measured by the Load-Deflection Technique
Characterization of Polycrystalline SiC Thin Films for MEMS Applications using Surface Micromachined Devices
Reaction Bonding of Microstructured Silicon Carbide using Polymer and Silicon Thin Film
Fabrication of Suspended Nanomechanical Structures from Bulk 6H-SiC Substrates
Sublimation Growth of Bulk AlN Crystals: Process Temperature and Growth Rate
Structural, Optical and Electrical Properties of Bulk AlN Crystals Grown by PVT
Experimental and Theoretical Analysis of Sublimation Growth of Bulk AlN Crystals
X-Ray Photoelectron Spectroscopy of Nitride Layer on SiC by Thermal Nitridation Using NH3
Plasma-Assisted Molecular Beam Epitaxial Growth of AlN Films on Vicinal Sapphire (0001) Substrates
Growth of GaN/AlN Quantum Dots on SiC (000-1) by Plasma-Assisted MBE
Control of the 2D/3D Transition of Cubic GaN/AlN Nanostructures on 3C-SiC Epilayers
In-Situ Monitoring of AlN Crystal Growth on 6H-SiC by the Use of a Pyrometer
Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam Epitaxy
Growth of N-Face Polarity III-Nitride Heterostructures on C-Face 4H-SiC by Plasma-Assisted MBE
Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates
GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy
Growth and Field Emission of GaN Nanowires
Intraband Transitions on GaN/AlN Quantum Wells Grown on Sapphire (0001) and 6H-SiC Substrates
Photoluminescence of GaN/AlN Quantum Dots Grown on SiC Substrates
Growth of GaN Films on Porous 4H-SiC Substrate by Metal-Organic Chemical Vapor Deposition
X-Ray Diffraction Imaging of GaN-Based Heterostructures on SiC
Effects of Crystallinity on Hydrogen Exfoliation of GaN Layers
Radiotracer Spectroscopy on Group II Acceptors in GaN
Properties of the 3.4 eV Luminescence Band in GaN and its Relation to Stacking Faults
An Ab Initio Study of Intrinsic Stacking Faults in GaN
AlGaN / GaN HEMT Structures Grown on SiCOI Wafers Obtained by the Smart CutTM Technology
Thermal Characterisation of AlGaN/GaN HEMTs using Micro-Raman Scattering Spectroscopy and Pulsed I-V Measurements
High CW Power 0.3 m Gate AlGaN/GaN HEMTs Grown by MBE on Sapphire
Self-Aligned N+ Polysilicon-Gate GaN MOSFETs
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