Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000
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書誌事項
Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000
（Materials science forum, v. 353-356）
Trans Tech Publications, c2001
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ECSCRM2000
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Includes bibliographical references and index
内容説明・目次
内容説明
Wide bandgap semiconductors such as SiC, III-V nitrides and related compounds are currently attracting more and more attention due to their very interesting physical properties, which are different from those of conventional semiconductors. Steady improvement of the crystal quality and improved knowledge of the physical properties of these materials are leading to rapid developments in high-power, high-temperature, high-frequency electronics and blue light emitters.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
目次
- Preface and Overview Sponsors and Committees Preface Overview Large Diameter, Low Defect Silicon Carbide Boule Growth SiC Single Crystal Growth by Sublimation: Experimental and Numerical Results Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions Progress in 4H-SiC Bulk Growth Stability Criteria for 4H-SiC Bulk Growth Growth Related Distribution of Secondary Phase Inclusions in 6H-SiC Single Crystals Investigation of a PVT SiC-Growth Set-up Modified by an Additional Gas Flow Mass Transport and Powder Source Evolution in Sublimation Growth of SiC Bulk Crystals Some Aspects of Sublimation Growth of SiC Ingots Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method Study of Boron Incorporation During PVT Growth of p-type SiC Crystals Features of Semi-Insulating SiC Single-Crystal Growth by Physical Vapor Transport Virtual Reactor: A New Tool for SiC Bulk Crystal Growth Study and Optimization Coupled Thermodynamic - Mass Transfer Modeling of the SiC Boule Growth by the PVT Method Numerical Simulation of Thermal Stress Formation During PVT-Growth of SiC Bulk Crystals Crystal Growth of 15R-SiC and Various Polytype Substrates Micropipe Filling by the Sublimation Close Space Technique Mechanism for Damage Healing of Cracked 6H-SiC Substrates by the Sublimation Method Chemical Vapor Deposition of SiC by the Temperature Oscillation Method Aluminium-Silicon as a Melt for the Low Temperature Growth of SiC Crystals Epitaxial Growth of 4H-SiC in a Vertical Hot-Wall CVD Reactor: Comparison between Up- and Down-Flow Orientations Influence of the Growth Conditions on the Layer Parameters of 4H-SiC Epilayers Grown in a Hot-Wall Reactor Enlarging the Usable Growth Area in a Hot-Wall Silicon Carbide CVD Reactor by Using Simulation Modeling Analysis of SiC CVD in a Planetary Reactor Influence of Silicon Gas-to-Particle Conversion on SiC CVD in a Cold-Wall Rotating-Disc Reactor Ab Initio Study of Silicon Carbide: Bulk and Surface Structures SiC Defect Density Reduction by Epitaxy on Porous Surfaces Effect of Sublimation Growth on the Structure of Porous Silicon Carbide: SEM and X-Ray Diffraction Investigations Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD Low Temperature Selective and Lateral Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate Control of Surface Morphologies for Epitaxial Growth on Low Off-Angle 4H-SiC (0001) Substrates Surface Morphology of 4H-SiC Inclined towards <1100> and <1120> Grown by APCVD Using the Si2Cl6+C3H8 System Growth of 3C-SiC Using Off-Oriented 6H-SiC Substrates SiC Polytype Transformation on the Growth Surface Improvement of the 3C-SiC/Si Interface by Flash Lamp Annealing How to Grow Unstrained 3C-SiC Heteroepitaxial Layers on Si (100) Substrates Growth of 3C-SiC on Si by Low Temperature CVD Growth of SiC on Si(100) by Low-Pressure MOVPE The Microstructure and Surface Morphology of Thin 3C-SiC Films Grown on (100) Si Substrates Using an APCVD-Based Carbonization Process A Comparison of SiO2 and Si3N4 Masks for Selective Epitaxial Growth of 3C-SiC Films on Si Selective Deposition of 3C-SiC Epitaxially Grown on SOI Subtrates Carbonization Induced Change of Polarity for MBE Grown 3C-SiC/Si(111) The Influence of Ge on the SiC Nucleation on (111)Si Surfaces In Situ RHEED Studies on the Influence of Ge on the Early Stages of SiC on Si(111) and (100) Surfaces Structural and Optical Properties of SiC Films Deposited on Si by DC Magnetron Sputtering Laser Crystallization of Amorphous SiC Thin Films on Glass TEM Investigation of Si Implanted Natural Diamond Surface Reconstruction on SiC(0001) and SiC(000-1): Atomic Structure and Potential Application for Oxidation, Stacking and Growth Interplay of Surface Structure, Bond Stacking and Heteropolytypic Growth of SiC Room Temperature Initial Oxidation of 6H- and 4H-SiC(0001) 3x3 Comparison of HF and Ozone Treated SiC Surfaces Preparation and Characterization of Hydrogen Terminated 6H-SiC Polytype and Polarity of Silicon Carbide and Aluminium Nitride Films Growing by MBE: A Nondestructive Identification Surface Abstraction Reactions at Experimental Temperatures
- a Theoretical Study of 4H-SiC(0001) Combined Scanning Tunneling Microscopy and Photoemission Studies of the -SiC(100) c(4x2) Surface Reconstruction Investigation of the SiC Surface after Nitrogen Plasma Treatment Morphology of Sublimation Grown 6H-SiC(000-1) Surfaces Germanium on SiC(0001): Surface Structure and Nanocrystals Origin of the Excellent Thermal Stability of Al/Si-Based Ohmic Contacts to p-Type LPE 4H-SiC Ion-Irradiation Effect on the Ni/SiC Interface Reaction Analysis of Strain and Defect Formation of Low-Dimensional Structures in SiC Source Material Related Distribution of Defects in 6H-SiC Single Crystals Characterization of 2 Inch SiC Wafers Made by the Sublimation Method Ion Bombardment Induced Damage in Silicon Carbide Studied by Ion Beam Analytical Methods Effects of Hydrogen Implantation and Annealing on the Vibrational Properties of 6H-SiC 4H- and 6H-SiC Rutherford Back Scattering-Channeling Spectrometry: Polytype Finger Printing X-ray Diffraction, Micro-Raman and Birefringence Imaging of Silicon Carbide X-Ray Diffraction Line Profile Analysis of Neutron Irradiated 6H-SiC High-Resolution XRD Evaluation of Thick 4H-SiC Epitaxial Layers Defect Analysis of SiC Sublimation Growth by the In-Situ X-Ray Topography Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes A Simple Non-Destructive Technique to Detect Micropipes in Silicon Carbide Micropipe and Macrodefect Healing in SiC Crystals during Liquid Phase Processing Micropipe Closing via Thick 4H-SiC Epitaxial Growth Involving Structural Transformation of Screw Dislocations Growth Evolution of Dislocation Loops in Ion Implanted 4H-SiC Lattice Parameter Measurements of 3C-SiC Thin Films Grown on 6H-SiC(0001) Substrate Crystals Self Diffusion in SiC: the Role of Intrinsic Point Defects Modeling of Boron Diffusion in Silicon Carbide Quantitative Modeling of Hydrogen Diffusion and Reactivation of H-Passivated Al-Acceptors in SiC Optical Characterization of SiC Materials: Bulk and Implanted Layers Line Broadening of Phonons in the Raman Spectra of Isotopically Disordered SiC Micro-Raman and Photoluminescence Study on n-type 6H-SiC Low-Frequency Vibrational Spectroscopy in SiC Polytypes Free Carrier Diffusion in 4H-SiC Valence Band Splittings of 15R-SiC Measured using Wavelength Modulated Absorption Spectroscopy Zeeman Effect of D1 Bound Exciton in 4H-SiC As-Grown and Process-Induced Intrinsic Deep-Level Luminescence in 4H-SiC Characterization of SiC:P Prepared by Nuclear Transmutation Due to Neutrons Presence of Hydrogen in SiC Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC Differentiation between C and Si Related Damage Centres in 4H- and 6H-SiC by the Use of 90-300 kV Electron Irradiation Followed by Low Temperature Photoluminescence Microscopy Infrared Investigation of Implantation Damage and Implantation Damage Annealing in 4H-SiC Investigation of Electroluminescence across 4H-SiC p+/n-/n+ Structures Using Optical Emission Microscopy Defects Characterization in SiC by Scanning Photoluminescence Spectroscopy Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC Low Temperature Photoluminescence Processes of 13C Enriched 6H- and 15R-SiC Crystals Grown by the Modified Lely Method Intrinsic Photoconductivity of 6H-SiC and the Free-Exciton Binding Energy Epitaxial Growth and Properties of SiC Layers Grown on -SiC(0001) by Solid-Source MBE: A Photoluminescence Study Prediction of Optical Properties of Si and Ge Dots in SiC Investigation of Variable Incidence Angle Spectroscopic Ellipsometry for Determination of Below Band Gap Uniaxial Dielectric Function Theory of Hydrogen in Silicon Carbide Dissociation Energy of the Passivating Hydrogen-Aluminum Complex in 4H-SiC Proton Irradiation Induced Defects in 4H-SiC Intrinsic Defect Complexes in -SiC: the Formation of Antisite Pairs Generation and Annihilation of Intrinsic-Related Defect Centers in 4H/6H-SiC Implantation Temperature Dependent Deep Level Defects in 4H-SiC Boron in SiC: Structure and Kinetics Deep Level Investigation of pn-Junctions formed by MeV Aluminum and Boron Implantation into 4H-SiC Boron Centers in 4H-SiC Oxygen-Related Defect Centers Observed in 4H/6H-SiC Epitaxial Layers Grown under CO2 Ambient Electrical Activity of Isolated Oxygen Defects in SiC Beryllium-Related Defect Centers in 4H-SiC Band Gap States of Cr in the Lower Part of the SiC Band Gap Tantalum and Tungsten in Silicon Carbide: Identification and Polytype Dependence of Deep Levels Shallow Dopant and Surface Levels in 6H-SiC MOS Structures Studied by Thermally Stimulated Current Technique Intrinsic Mobility of Conduction Electrons in 4H-SiC A Study of Band to Band Tunneling with Application to High-Field Transport in Hexagonal SiC Polytypes Thermopower Measurements in 4H-SiC and Theoretical Calculations Considering the Phonon Drag Effect Donor Densities and Donor Energy Levels in 3C-SiC Determined by a New Method Based on Hall-Effect Measurements Intrinsic Defects in Silicon Carbide Polytypes Radiation-Induced Pair Defects in 6H-SiC Studied by Optically Detected Magnetic Resonance Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold EPR Study of Proton Implantation Induced Intrinsic Defects in 6H- and 4H-SiC EPR Study of Carbon Vacancy-Related Defects in Electron-Irradiated 6H-SiC EPR of Deep Al and Deep B in Heavily Al-doped as Grown 4H-SiC The Electronic Structure of the N Donor Center in 4H-SiC and 6H-SiC Identification of Iron and Nickel in 6H-SiC by Electron Paramagnetic Resonance Calculated Positron Annihilation Parameters for Defects in SiC Annealing Process of Defects in Epitaxial SiC Induced by He and Electron Irradiation: Positron Annihilation Study Recent Progress in SiC Epitaxial Growth and Device Processing Technology Doping of Silicon Carbide by Ion Implantation Neutron Irradiation of 4H SiC Techniques for Depth Profiling of Dopants in 4H-SiC Growth of -Doped SiC Epitaxial Layers Effect of Residual Damage on Carrier Transport Properties in a 4H-SiC Double Implanted Bipolar Junction Transistor High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing Enhancement of Electrical Activation of Aluminum Acceptors in 6H-SiC by Co-Implantation of Carbon Ions High Dose Implantation in 6H-SiC Precipitate Formation in Heavily Al-Doped 4H-SiC Layers Flash Lamp Annealing of Implantation Doped p- and n-Type 6H-SiC Structural and Electrical Characterization of Ion Beam Synthesized and n-Doped SiC Layers Channeling Measurements of Ion Implantation Damage in 4H-SiC The Monte Carlo Binary Collision Approximation Applied to the Simulation of the Ion Implantation Process in Single Crystal SiC: High Dose Effects Formation of Large Area Al Contacts on 6H- and 4H-SiC Substrates Ru Schottky Barrier Contacts to n- and p-type 6H-SiC Stability of Molybdenum Schottky Contact to Silicon Carbide Effects of Thermal Annealing on Cu/6H-SiC Schottky Properties Electrochemical Characterization of p-Type Hexagonal SiC A Novel Technique for Shallow Angle Beveling of SiC to Prevent Surface Breakdown in Power Devices Interface States of SiO2/SiC on (11-20) and (0001) Si Faces Interface Properties of MOS Structures Formed on 4H-SiC C(000-1) Face Steam Annealing Effects on CV Characteristics of MOS Structures on (11-20) Face of 4H-SiC Role of H2 in Low Temperature Post-Oxidation Anneal for Gate Oxide on 6H-SiC Influence of Post-Oxidation Process on the MOS Interface and MOSFETs Properties Observation of SiO2/SiC Interface with Different Off-Angle from Si(0001) Face Using Transmission Electron Microscopy Remote PECVD Oxide Utilized in U-MOS Structures and Different MOSFETs on SiC Indications for Nitrogen-Assisted Removal of Carbon from SiO2-SiC Interface Dissolution Mechanism of the Carbon Islands at the SiO2/SiC Interface Dependence of Wet Oxidation on the Defect Density in 3C-SiC SiC Microwave Power Devices 1700 V SiC Schottky Diodes Scaled to 25 A Temperature Dependence of Forward and Reverse Characteristics of Ti, W, Ta and Ni Schottky Diodes on 4H-SiC A High Performance JBS Rectifier - Design Considerations Design and Characterization of 2.5kV 4H-SiC JBS Rectifiers with Self-Aligned Guard Ring Termination Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing Influence of the Buried p-Layer on the Blocking behavior of Vertical JFETs in 4H-SiC A Comparison between Physical Simulations and Experimental Results in 4H-SiC MESFETs with Non-Constant Doping in the Channel and Buffer Layers Noise Behavior of 4H-SiC MESFETs at Low Drain Voltage Double Implanted Power MESFET Technology in 4H-SiC Source Resistance Analysis of SiC-MESFET Design and Implementation of RESURF MOSFETs in 4H-SiC Comparison of Super-Junction Structures in 4H-SiC and Si for High Voltage Applications SiC Junction Control, an Alternative to MOS Control High Voltage Switching Devices Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes Planar p-n Diodes Fabricated by MeV-Energy and High-Temperature Selective Implantation of Aluminum to 4H-SiC Silicon Carbide Zener Diodes Characteristics of Epitaxial and Implanted N-Base 4H-SiC GTO Thyristors Turn-off Performance of a 2.6 kV 4H-SiC Asymmetrical GTO Thyristor SiC Based Gas Sensors and their Applications High Temperature 10 Bar Pressure Sensor Based on 3C-SiC/SOI for Turbine Control Applications Charged Particle Detection Properties of Epitaxial 4H-SiC Schottky Diodes Thin Heavily Compensated 6H-SiC Epilayers as Nuclear Particle Detectors The Role of Threading Dislocations in the Physical Properties of GaN and its Alloys AlN Crystal Growth by Sublimation Technique Investigation of the Structure of 2H-AlN Films on Si(001) Substrates Formation and Electronic Transport of 2D Electron and Hole Gases in AlGaN/GaN Heterostructures Luminescence of InGaN/GaN Multiple Quantum Wells Grown by Mass-Transport From Relaxed to Highly Tensily Strained GaN Grown on 6H-SiC and Si(111): Optical Characterization Electron Traps in Undoped GaN Layers Subjected to Gamma-Irradiation and Annealing Characterization of GaAlN/GaN Superlattice Heterostructures III-Nitride Power Devices - Good Results and Great Expectations High-Performance Surface-Channel Diamond Field-Effect Transistors
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