GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.
Author(s)
Bibliographic Information
GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.
（Materials Research Society symposium proceedings, v. 831）
Materials Research Society, c2005
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Note
Includes bibliographical references and indexes
Description and Table of Contents
Description
This book discusses GaN and Related Alloys and reflects an emerging emphasis on the binaries of InN and AlN. The major thrust here is the topical development of thin-film growth, bulk growth techniques, methods to cover the full ternary and quaternary alloy ranges toward InN and AlN and their characterization; strategies for structural defect reduction and their characterization; ways to better control p-type doping and its characterization; device and defect physics, including polarization effects; physics of surfaces and interfaces; and device processing techniques. In addition, advances in MBE devices, high-power electronics, RF performance of electronics, UV emitters, high-efficiency light emitters, photo and chemical sensors, as well as new applications within the group-III nitrides, are also covered. The book captures the current status of this field and will be useful for researchers working with group-III nitrides, as well as for students who seek entry into this subject.
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