Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium

著者

• Gusev, Evgeni P.
• Electrochemical Society. Electronics Division
• Electrochemical Society. Dielectric Science and Technology Division
• Electrochemical Society. High Temperature Materials Division

書誌事項

Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium

editors, Evgeni P. Gusev ... [et al.] ; sponsoring divisions, Electronics, Dielectric Science and Technology, and High Temperature Materials

（Proceedings / [Electrochemical Society], v. 2005-05）

Electrochemical Society, c2005

注記

Includes bibliographical references and indexes

詳細情報

• NII書誌ID(NCID): BA74369408
• ISBN:
  • 1566774632
• LCCN: 2005922533
• 出版国コード: us
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Pennington, NJ
• ページ数/冊数: xv, 634 p.
• 大きさ: 24 cm
• 親書誌ID:
  • BA01323290