Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium

Author(s)

• Gusev, Evgeni P.
• Electrochemical Society. Electronics Division
• Electrochemical Society. Dielectric Science and Technology Division
• Electrochemical Society. High Temperature Materials Division

Bibliographic Information

Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium

editors, Evgeni P. Gusev ... [et al.] ; sponsoring divisions, Electronics, Dielectric Science and Technology, and High Temperature Materials

（Proceedings / [Electrochemical Society], v. 2005-05）

Electrochemical Society, c2005

Note

Includes bibliographical references and indexes

Details

• NCID: BA74369408
• ISBN:
  • 1566774632
• LCCN: 2005922533
• Country Code: us
• Title Language Code: eng
• Text Language Code: eng
• Place of Publication: Pennington, NJ
• Pages/Volumes: xv, 634 p.
• Size: 24 cm
• Parent Bibliography ID:
  • BA01323290