Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

著者

• European Conference on Silicon Carbide and Related Materials
• Nipoti, Roberta
• Poggi, Antonella
• Scorzoni, Andrea

書誌事項

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

edited by Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

（Materials science forum, v. 483-485）

Trans Tech Publications, c2005

注記

Includes bibliographical references and index

内容説明・目次

内容説明

Volume is indexed by Thomson Reuters CPCI-S (WoS). Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to operate under harsh conditions.

目次

• Progress and Limits of the Numerical Simulation of SiC Bulk and Epitaxy Growth Processes Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport Crystalline Quality Evaluation of 6H-SiC Bulk Crystals Grown from Si-Ti-C Ternary Solution Growth of 2 Inches 6H-SiC Single Crystals by Sublimation Method: The Comparison of - and ss-SiC Powders A Study of 6H-Seeded 4H-SiC Bulk Growth by PVT Modified Physical Vapor Transport Growth of SiC - Control of Gas Phase Composition for Improved Process Conditions High Al-Doping of SiC Using a Modified PVT (M-PVT) Growth Set-Up Growth of Undoped (Vanadium-Free) Semi-Insulating 6H-SiC Single Crystals Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC Evolution Roots of Growth-Induced Polytype Domains in 6H-SiC Single Crystals SiC Crystal Growth by Sublimation Method with Modification of Crucible and Insulation Felt Design Numerical Analysis of Growth Condition on SiC-CVD in the Horizontal Hot-Wall Reactor Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hot-Wall CVD Reactor SiC and III-Nitride Growth in Hot-Wall CVD Reactor New Achievements on CVD Based Methods for SiC Epitaxial Growth Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive High Growth Rate (up to 20 m/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor Homoepitaxial Growth of 4H-SiC Using CH3Cl Carbon Precursor Improved Surface Morphology and Background Doping Concentration in 4H-SiC(000-1) Epitaxial Growth by Hot-Wall CVD 4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles 2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates Epitaxial Growth and Characterisation of Phosphorus Doped SiC Using TBP as Precursor Experimental Investigation and Simulation of Silicon Droplets Formation during SiC CVD Epitaxial Growth Structural Improvement of Seeds for Bulk Crystal Growth by Using Hot-Wall CVD of 4H-SiC CVD Growth and Characterization of 4H-SiC Epitaxial Film on (11-20) As-Cut Substrates Evaluation of p-Type Doping for (1,1,-2,0) Epitaxial Layers Grown on -Cut (1,1,-2,0) 4H-SiC Substrates Aluminium Doping of 4H-SiC Grown with HexaMethylDiSilane Is the Al Solubility Limit in SiC Temperature Dependent or not? Homoepitaxial Growth on 4H-SiC (03-38) Face by Sublimation Close Space Technique LPE of Silicon Carbide Using Diluted Si-Ge Flux Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor Epitaxial Growth of n-Type 4H-SiC on 3" Wafers for Power Devices Epitaxial Overgrowth of 4H-SiC for Devices with p-Buried Floating Junction Structure Reduction of Stacking Faults in Fast Epitaxial Growth of 4H-SiC and its Impacts on High-Voltage Schottky Diodes Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices Characteristics of Trench-Refilled 4H-SiC P-N Junction Diodes Fabricated by Selective Epitaxial Growth Molecular Beam Epitaxy of Semiconductor Nanostructures Based on SiC Computer Simulation of the Early Stages of Nano Scale SiC Growth on Si Growth of 3C-(Si1-xC1-y)Gex+y Layers on 4H-SiC by Molecular Beam Epitaxy Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) Substrate Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD Method Planar Defects, Voids and their Relationship in 3C-SiC Layers Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrate Regrowth of 3C-SiC on CMP Treated 3C-SiC/Si Epitaxial Layers Low Temperature Chemical Vapor Deposition of 3C-SiC on Si Substrates Challenge to 200 mm 3C-SiC Wafers Using SOI Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates Nucleation Control in FLASIC Assisted Short Time Liquid Phase Epitaxy by Melt Modification A Thermal Model for Flash Lamp Annealing of 3C-SiC/Si Multi-Layer Systems (i-FLASiC) Microstructures in the Pendeo Epitaxial Layer of 3C-SiC on Si Substrate Large Area DPB Free (111) -SiC Thick Layer Grown on (0001) -SiC Nominal Surfaces by the CF-PVT Method Comparative Evaluation of Free-Standing 3C-SiC Crystals Epitaxial SiC Formation at the SiO2/Si Interface by C+ Implantation into SiO2 and Subsequent Annealing Microfabrication of Si Column Covered with SiC Film for Electron Emitter Formation of Ferromagnetic SiC:Mn Phases Two-Dimensional Model of Conjugate Heat and Mass Transport in the Isothermal Chemical Vapour Infiltration of 3D-Preform by SiC Matrix A Short Synopsis of the Current Status of Porous SiC and GaN Preparation of Porous 4H-SiC by Surface Anodization Optical Spectroscopy as a Tool for Observation of Porous SiC Graphitization X-Ray Diffraction Analysis of Epigrowth on Porous 4H-SiC Substrates On Current Limitations in Porous SiC Applications Interface Defects in n-Type 3C-SiC/SiO2: An EPR Study of Oxidized Porous Silicon Carbide Single Crystals Modification of the Oxide/Semiconductor Interface by High Temperature NO Treatments: A Combined EPR, NRA and XPS Study on Oxidized Porous and Bulk n-Type 4H-SiC Development of a KOH Defect Etching Furnace with Absolute In-Situ Temperature Measurement Capability Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman Studies RBS-Channeling and EPR Studies of Damage in 2 MeV Al2+-Implanted 6H-SiC Substrates Microstructural Characterization of 3C-SiC Thin Films Grown by Flash Lamp Induced Liquid Phase Epitaxy Dynamical Study of Dislocations and 4H 3C Transformation Induced by Stress in (11-20) 4H-SiC Pressure Effect on the Elastic Properties of SiC Polytypes [01-15] Grown 6H-SiC Bulk Crystals Investigated by High Energy Triple Axis X-Ray Diffraction XRDT Study of Structural Defects of 6H-SiC Crystals Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals PVT-Growth and Characterization of Single Crystalline 3C-SiC on a (0001) 6H-SiC Substrate Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers Investigation of Stacking Fault Formation in Hydrogen Bombarded 4H-SiC Intensity Ratio of the Doublet Signature of Excitons Bound to 3C-SiC Stacking Faults in a 4H-SiC Matrix Specific Aspects of Type II Heteropolytype Stacking Faults in SiC Optical Characterization of Deep Level Defects in SiC Optical Centres with Local Vibrational Modes Created by High Temperature Annealing of Electron Irradiated 4H and 6H Silicon Carbide Hyperfine Interaction of Nitrogen Donor in 4H-SiC Studied by Pulsed-ENDOR Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS Electronic Levels Induced by Irradiation in 4H-Silicon Carbide Capacitance Spectroscopy Study of High Energy Electron Irradiated and Annealed 4H-SiC Recombination Enhanced Defect Annealing in 4H-SiC Room Temperature Steady State and Time Resolved PL Characterization of Ion Irradiation Induced Defects in 6H-SiC Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition Direct Experimental Comparison of the Effects of Electron Irradiation on the Charge Carrier Removal Rate in n-Type Silicon and Silicon Carbide Study of Ion Induced Damage in 4H-SiC Micro-Optical Characterization Study of Highly p-Type Doped SiC:Al Wafers Improved Resolution of Epitaxial Thin Film Doping Using FTIR Reflectance Spectroscopy Electrical Properties of p-Type In-Situ Doped vs. Al-Implanted 4H-SiC Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay Nonequilibrium Carrier Diffusion and Recombination in Heavily-Doped and Semi-Insulating Bulk HTCVD Grown 4H-SiC Crystals Optical Studies of Nonequilibrium Carrier Dynamics in Highly Excited 4H-SiC Epitaxial Layers Comparison of Electrically and Optically Determined Minority Carrier Lifetimes in 6H-SiC Electrical Characterisation of Heavily Al Doped 4H-SiC Layer Grown by Vapour-Liquid-Solid Epitaxy in Al-Si Melt Evaluation of On-State Resistance and Boron-Related Levels in n-Type 4H-SiC Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes Infrared Gratings Based on SiC/Si-Heterostructures Characterisation of 4H-SiC PiN Diodes by Micro-Raman Scattering and Photoemission Hall Effect in the Channel of 3C-SiC MOSFETs Photoluminescence Study of In-Situ Rare Earth Doped PVT-Grown SiC Single Crystals Excitation Power Dependence of Al-Related Features in the LTPL Spectra of 4H-SiC Concentration of N and P in SiC Investigated by Time-Of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) Materials Characterization and Modeling of SiC in Europe - From the Viewpoint of a Theorist A New Model for the DI-Luminescence in 6H-SiC Observation of Vacancy Clusters in HTCVD Grown SiC Electron Irradiation Induced Vacancy Defects Detected by Positron Annihilation in 6H-SiC The VSiCSi(SiCCSi) Complex in Electron-Irradiated 6H-SiC The Role of Nitrogen in the Annealing of Vacancies in 4H-SiC Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers High-Temperature Stable Multi-Defect Clusters in Neutron Irradiated Silicon Carbide: Electron Paramagnetic Resonance Study Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC M-Center in Low-Dose Proton Implanted 4H-SiC
• Bistability and Change in Emission Rate Ab Initio Calculation of Shallow Defects: Results for P-Related Donors in SiC Probing of the Wave Function of Shallow Donors and Acceptors by EPR in SiC Crystals with Changed Isotopic Composition Effective-Mass Theory of Shallow Donors in 4H-SiC Electron Paramagnetic Resonance of Shallow Phosphorous Centers in 4H- and 6H-SiC Theoretical Investigations of Complexes of p-Type Dopants and Carbon Interstitial in SiC: Bistable, Negative-U Defects Ab-Initio Study of Dopant Interstitials in 4H-SiC Kinetic Aspects of the Interstitial-Mediated Boron Diffusion in SiC 3d-Transition Metals in Cubic and Hexagonal Silicon Carbide Hydrogen-Saturated SiC-Surfaces: Model Systems for Studies of Passivation, Reconstruction and Interface Formation First Principles Simulations of SiC-Based Interfaces Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100) Electrical Characterization of Defects in p-Type SiC Using Recombination Induced Conductivity Inversion Analysis of SiC Islands Formation during First Steps of Si Carbonization Process ALD Deposited Al2 O3 Films on 6H-SiC(0001) after Annealing in Hydrogen Atmosphere SiC/SiO2 Interface States: Properties and Models The Search for Near Interface Oxide Traps - First-Principles Calculations on Intrinsic SiO2 Defects Interface States in SiO2/4H-SiC(0001) Interfaces from First-Principles: Effects of Si-Si Bonds and of Nitrogen Atom Termination Structural and Electronic Properties of Si1-xCxO2 Surface and Interface Studies of Si-Rich 4H-SiC and SiO2 Characterization of Oxide Films on SiC Epitaxial (000-1) Faces by Angle-Resolved Photoemission Spectroscopy Measurements Using Synchrotron Radiation Characterization of SiC Passivation Using MOS Capacitor Ultraviolet-Induced Hysteresis Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors Technological Aspects of Ion Implantation in SiC Device Processes Fabrication of Compact Ion Implanter for Silicon Carbide Devices Development of the Novel Electron Bombardment Anneal System (EBAS) for SiC Post Ion Implantation Anneal Aluminium Implantation Induced Linear Surface Faults in 4H-SiC Electrical Behavior of Implanted Aluminum and Boron near Tail Region in 4H-SiC after High-Temperature Annealing Annealing of Aluminum Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing Ar Annealing at 1600 DegreesC and 1650 DegreesC of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing Temperature J-V Characteristics of Al+ Ion Implanted p+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600 DegreesC P-Type SiC Layers Formed by VLS Induced Selective Epitaxial Growth Ion Beam Analysis and Computer Simulation of Damage Accumulation in Nitrogen Implanted 6H-SiC: Effects of Channeling Experimental Evidence for an Electrically Neutral (N-Si)-Complex Formed during the Annealing Process of Si+-/N+-Co-Implanted 4H-SiC Homogeneity of Nitrogen and Phosphorus Co-Implants in 4H-SiC: Full Wafer Scale Investigation n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature Study of Carbon in Thermal Oxide Formed on 4H-SiC by XPS The Role of Formation and Dissolution of C Clusters on the Oxygen Incorporation during Dry Thermal Oxidation of 6H-SiC Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC High Temperature Rapid Thermal Oxidation and Nitridation of 4H-SiC in Diluted N2O and NO Ambient 4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N2O High-Reliability ONO Gate Dielectric for Power MOSFETs An In-Situ Post Growth Annealing Process for the Improvement of 4H-SiC/SiO2 MOS Interface Prepared by CVD Using TEOS, and its Characteristic Study High Temperature NO Annealing of Deposited SiO2 and SiON Films on N-Type 4H-SiC Characteristics of Post-Nitridation Rapid-Thermal Annealed Gate Oxide Grown on 4H-SiC Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation Effects of N2O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability Characterization of Aluminium and Titanium Oxides Deposited on 4H-SiC by Atomic Layer Deposition Technique Electrical Properties of Aluminium Oxide Films Grown by Atomic Layer Deposition on n-Type 4H-SiC Characterization of 4H-SiC MOS Structures with Al2O3 as Gate Dielectric 4H-SiC MOSFETs Using Thermal Oxidized Ta2Si Films as High-k Gate Dielectric Characterization of Polyimide Dielectric Layer for the Passivation of High Electric Field and High Temperature Silicon Carbide Power Devices Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode Surface Preparation of 6H-SiC Substrates by Electron Beam Annealing Ion-Beam Induced Modifications of Titanium Schottky Barrier on 4H-SiC Phase Formation at Rapid Thermal Annealing of Nickel Contacts on C-Face n-Type 4H-SiC Ni-Silicide Contacts to 6H-SiC: Contact Resistivity and Barrier Height on Ion Implanted n-Type and Barrier Height on p-Type Epilayer Nucleation and Reaction of Ag on 4H-SiC(0001) Characterization of Electrical Contacts on Polycrystalline 3C-SiC Thin Films Effect of the Metal Composition on the Electrical and Thermal Properties of Au/Pd/Ti/Pd Contacts to p-Type SiC Step Structures Produced by Hydrogen Etching of Initially Step-Free (0001) 4H-SiC Mesas Reduction of Fluoride Species and Surface Roughness by H2 Gas Addition in SiC Dry Etching Structure and Morphology of 4H-SiC Wafer Surfaces after H2-Etching Reactive Ion Etching Induced Surface Damage of Silicon Carbide The Reactive Neutral Beam Etching of SiC and its Application in p-n Junction Periphery Protection Forward-Bias Degradation in 4H-SiC p+nn+ Diodes: Influence of the Mesa Etching Trench Formation on Ion Implanted SiC Surfaces after Thermal Oxidation Metal Bonding in SiC Based Substrates SiC Power Device Packaging Technologies for 300 to 350 DegreesC Applications Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET Fabrication 4H-SiC DMOSFETs for High Speed Switching Applications Realisation of Large Area 3C-SiC MOSFETs 4H-SiC Lateral RESURF MOSFETs on Carbon-Face Substrates Dose Designing for High-Voltage 4H-SiC RESURF MOSFETs - Device Simulation and Fabrication Analysis of Low On-Resistance in 4H-SiC Double-Epitaxial MOSFET Low On-Resistance in Normally-Off 4H-SiC Accumulation MOSFET Short-Channel Effects in 4H-SiC MOSFETs Performance of SiC Cascode Switches with Si MOS Gate Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel Doping Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminium Ion-Implanted Material High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material Modeling of Lattice Site-Dependent Incomplete Ionization in -SiC Devices Physical Simulation of Drain-Induced Barrier Lowering Effect in SiC MESFETs High Power Lateral Epitaxy MESFET Technology in Silicon Carbide Broadband RF SiC MESFET Power Amplifiers Important Role of Parasitic Regions in Electrical Characteristics of SiC MESFETs Hole-Like Defects in n-Channel 4H-SiC MESFETs Observed by Current Transient Spectroscopy High-Purity Versus High-Defect-Density Semiinsulating Substrates for SiC MESFET: Simulation of Device Characteristics Wannier-Stark Localization Effects in 6H-SiC JFETs Effective Edge Termination Design in SiC VJFET Electrical Characteristics Temperature Dependence of 600V-Class Deep Implanted Gate Vertical JFET Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs Current Gain of 4H-SiC Bipolar Transistors Including the Effect of Interface States BVCEO Versus BVCBO for 4H and 6H Polytype SiC Bipolar Junction Transistors Electrical Characteristics of 4H-SiC BJTs at Elevated Temperatures 1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs A 4H-SiC BJT with an Epitaxially Regrown Extrinsic Base Layer Low and High Temperature Performance of 600V 4H-SiC Epitaxial Emitter BJTs Optimisation of Heterostructure Bipolar Transistors in SiC Comparison of High-Voltage 4H-SiC Insulated-Gate Bipolar Transistor (IGBT) and MOS-Gated Bipolar Transistor (MGT) Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD) Influence of Overgrown Micropipes in the Active Area of SiC Schottky Diodes on Long Term Reliability Temperature Impact on High-Current 1.2kV SiC Schottky Rectifiers Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights Planar Schottky Microwave Diodes on 4H-SiC Design, Fabrication and Characterization of 1.5 m cm2, 800 V 4H-SiC n-Type Schottky Barrier Diodes Temperature Dependence of 4H-SiC JBS and Schottky Diodes after High Temperature Treatment of Contact Metal Numerical Analysis of SiC Merged PiN Schottky Diodes New High-Voltage Unipolar Mode p+ Si/n- 4H-SiC Heterojunction Diode SiC Super Junction Power Devices: Modeling and Analysis Electrical Characteristics and Reliability of 4H-SiC PiN Diodes Fabricated on In-House Grown and Commercial Epitaxial Films Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields 8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes Large Area, Avalanche-Stable 4H-SiC PiN Diodes with VBR > 4.5 kV Demonstration of High-Power X-Band Oscillation in p+/n-/n+ 4H-SiC IMPATT Diodes with Guard-Ring Termination Lifetime Control of the Minority Carrier in PiN Diodes by He+ Ion Implantation Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or B Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures Investigation of Microwave Switching 4HSiC pin Diodes in the 20-500 DegreesC Temperature Range Influence of Irradiation on Excess Currents in SiC pn Structures A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery SiC Materials and Technologies for Sensors Development Silicon Carbide for Alpha, Beta, Ion and Soft X-Ray High Performance Detectors Measurements of Charge Collection Efficiency of p+/n Junction SiC Detectors Investigation of the SiC Transistor and Diode Nuclear Detectors at 8 MeV Proton Irradiation High Energy Resolution Detectors Based on 4H-SiC High Temperature Hydrocarbon Sensing with Pt-Thin Ga2O3-SiC Diodes Modeling of Photon Recycling in GaN-Devices Nickel-Vacancy Complexes in Diamond: An Ab-Initio Investigation Manganese Impurity in Boron Nitride and Gallium Nitride Heteroepitaxy of GaN on Silicon: In Situ Measurements Structure and Energy of the 90 Degrees Partial Dislocations in Wurtzite-GaN High Temperature Contacts to GaN and SiC Based on TiBx Nanostructure Layers Microscopic Spatial Distribution of Bound Excitons in High-Quality ZnO

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詳細情報

• NII書誌ID(NCID): BA74814169
• ISBN:
  • 0878499636
• LCCN: 2005276808
• 出版国コード: sz
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Uetikon-Zuerich
• ページ数/冊数: xxvii, 1086 p.
• 大きさ: 25 cm
• 分類:
  • LCC : TA401.3
  • DC22 : 620.1/1 s
  • DC22 : 621.3815/2
• 件名:
  • LCSH : Silicon carbide -- Congresses
  • FREE : ECSCRM
• 親書誌ID:
  • BA00294222