Bibliographic Information

Fabrication of GaAs devices

by Albert G. Baca and Carol I.H. Ashby

(EMIS processing series / Series advisor B.L. Weiss, no. 6)

Institution of Electrical Engineers, c2005

Available at  / 2 libraries

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Note

Includes bibliographical references and index

Description and Table of Contents

Description

This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.

Table of Contents

Chapter 1: Introduction to GaAs devices Chapter 2: Semiconductor properties, growth, characterisation and processing techniques Chapter 3: Cleaning and passivation of GaAs and related alloys Chapter 4: Wet etching and photolithography of GaAs and related alloys Chapter 5: Dry etching of GaAs and related alloys Chapter 6: Ohmic contacts Chapter 7: Schottky contacts Chapter 8: Field effect transistors Chapter 9: Heterojunction bipolar transistors Chapter 10: Wet oxidation for optoelectronic and MIS GaAs devices

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