Process technology for silicon carbide devices
著者
書誌事項
Process technology for silicon carbide devices
（EMIS processing series / Series advisor B.L. Weiss, 2）
INSPEC, c2002
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注記
Includes bibliographical references and index
内容説明・目次
内容説明
Silicon carbide (SiC) is a wide bandgap semiconductor whose properties make it suitable for devices and integrated circuits operating at high voltage, high frequency and high temperature. This second book in the Processing series explains why SiC is so useful in electronics and gives clear guidance on the various processing steps. Growth, doping, etching, contact formation and dielectrics are all described in detail. The final chapter explains how to integrate the processing steps, and shows typical device cross-sections for over 20 different devices. Engineers who are developing systems for the fabrication of SiC devices are in need of guidance from experts in academia and the industry who have been pioneering the field: the book is designed as an advanced tutorial and reference for this purpose. A glossary of terms used in SiC technology is included.
目次
Chapter 1: Advantages of SiC
Chapter 2: Bulk and epitaxial growth of SiC
Chapter 3: Ion implantation and diffusion in SiC
Chapter 4: Wet and dry etching of SiC3 Ion implantation and diffusion in SiC
Chapter 5: Thermally grown and deposited dielectrics on SiC
Chapter 6: Schottky and ohmic contacts to SiC
Chapter 7: Devices in SiC
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