SiC materials and devices
著者
書誌事項
SiC materials and devices
（Selected topics in electronics and systems, v. 40,
World Scientific, c2006-
- v. 1
- v. 2
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注記
Includes bibliographical references
内容説明・目次
- 巻冊次
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v. 1 ISBN 9789812568359
内容説明
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
目次
- SiC Material Properties (G Pensl et al.)
- SiC Homoepitaxy and Heteroepitaxy (A S Bakin)
- Ohmic Contacts to SiC (F Roccaforte et al.)
- Silicon Carbide Schottky Barrier Diode (J H Zhao et al.)
- High Power SiC PIN Rectifiers (R Singh)
- Silicon Carbide Diodes for Microwave Applications (K Vassilevski)
- SiC Thyristors (M E Levinshtein et al.)
- Silicon Carbide Static Induction Transistors (G C DeSalvo).
- 巻冊次
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v. 2 ISBN 9789812703835
内容説明
Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization.This second of two volumes reviews four important additional areas: the growth of SiC substrates; the deep defects in different SiC polytypes, which after many years of research still define the properties of bulk SiC and the performance and reliability of SiC devices; recent work on SiC JFETs; and the complex and controversial issues important for bipolar devices.Recognized leaders in the field, the contributors to this volume provide up-to-date reviews of further state-of-the-art areas in SiC technology and materials and device research.
目次
- Growth of SiC Substrates (A Powell et al.)
- Deep Level Defects in Silicon Carbide (A A Lebedev)
- Silicon Carbide Junction Field Effect Transistors (D Stephani & P Friedrichs)
- SiC BJTs (T P Chow & A K Agarwal).
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