Theory of defects in semiconductors

Author(s)

    • Drabold, David A.
    • Estreicher, Stefan K.

Bibliographic Information

Theory of defects in semiconductors

David A. Drabold, Stefan K. Estreicher (eds.)

(Topics in applied physics, v. 104)

Springer, c2007

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Note

Includes bibliographical references and index

Description and Table of Contents

Description

This volume presents a coherent and detailed description of the field, and brings together leaders in theoretical research. The book discusses today's state-of-the-art, as well as tomorrow's tools: the supercell-pseudopotential method, the GW formalism, Quantum Monte Carlo, learn-on-the-fly molecular dynamics, finite-temperature treatments and more. A wealth of applications are included, from point defects to wafer bonding or the propagation of dislocation.

Table of Contents

1. Defect Theroy: An Armchair History.- 2. Supercell Methods for Defect Calculations.- 3. Marker-Method Calculations for Electrical Levels Using Gaussian-orbital Basis-sets.- 4. Dynamical Matrices and Free Energies.- 5. The Calculation of Free Energies in Semiconductors: Defects, Transitions and Phase Diagrams.- 6. Quantum Monte Carlo Techniques and Defects in Semiconductors.- 7. Quasiparticle Calculations for Point Defects at Semiconductor Surfaces.- 8. Multiscale Modelling of Defects in Semiconductors: A Novel Molecular Dynamics Scheme.- 9. Empirical Molecular Dynamics: Possibilities, Requirements, and Limitations.- 10. Defects in Amorphous Semiconductors: Amorphous Silicon.- 11. Light-induced Effects in Amorphous and Glassy Solids.

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Details

  • NCID
    BA78997832
  • ISBN
    • 9783540334002
  • LCCN
    2006934116
  • Country Code
    gw
  • Title Language Code
    eng
  • Text Language Code
    eng
  • Place of Publication
    Berlin
  • Pages/Volumes
    xiii, 295 p.
  • Size
    24 cm
  • Classification
  • Parent Bibliography ID
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