Study on the transport mechanism by localized carriers in GaAs layers grown by molecular beam epitaxy

Author(s)

• 下岸, 史明 シモギシ, フミアキ

Bibliographic Information

Study on the transport mechanism by localized carriers in GaAs layers grown by molecular beam epitaxy

by Fumiaki Shimogishi

Fumiaki Shimogishi, 2006

Note

Thesis (doctoral)--Japan Advanced Institute of Science and Technology, 2006, 博材第180号

Details

• NCID: BA80295951
• Country Code: ja
• Title Language Code: eng
• Text Language Code: eng
• Place of Publication: [Nomi, Ishikawa]
• Pages/Volumes: vii, 121 leaves
• Size: 31 cm