Semiconductor measurements and instrumentation
著者
書誌事項
Semiconductor measurements and instrumentation
McGraw Hill, c1998
2nd ed
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注記
Includes bibliographical references and indexes
内容説明・目次
内容説明
The definitive reference on semiconductor characterization tools! Here, in one well-organized volume, are detailed explanations of the advanced and "traditional") techniques for evaluating virtually every criterion: crystal defects, impurity concentration, lifetime, film thickness, resistivity, and such critical electrical properties as mobility, Hall effect, and conductivity type. Reliable, high-accuracy methods of measuring hardness, stress, and various kinds of surface contamination are also included. In addition to its value as a practical everyday reference, the text also serves as an excellent user's guide to the latest methods of optical microscopy, scanning electron microscopy (SEM), electron microprobe analysis, transmission electron microscopy (TEM), Auger electron spectroscopy (AES), scanning probe microscopy (SPM), and secondary ion mass spectrometry (SIMS). This is the only guide that offers such "dual coverage" of its topic -- in terms of both measurements and tools.
目次
Crystal Orientation.Crystal Defects.Impurity Concentration.Resistivity, Sheet Resistance, and contact Resistance.Mobility, conductivity type, and Ahll Effect.Carrier Lifetime.Film Thickness.Wafer-Oriented Measurements.Optical Microscopy.Scanning Electron Microscopy.Electron Probe Microanalysis.Transmission Electron Microscopy.Auger Electron Spectroscopy. Scanning Probe Microscopy.Secondary ion Mass Spectrometry.appenix 1L Safety Precautions.appendix 2: Measurement Related Acronyms and Abbreviations.Appendix 3: Conversion Tables.Appendix 4: analytical instrument Comparison and Capability.Subject Index.Name Index.
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