Copper interconnects, new contact and barrier metallurgies/structures, and low-k interlevel dielectrics III : at the 208th ECS meeting, October 16-21, 2005, Los Angeles, California, USA

Author(s)

• Mathad, G. S.
• Electrochemical Society. Dielectric Science and Technology Division
• Electrochemical Society. Electronics and Photonics Division
• Electrochemical Society. Electrodeposition Division
• Electrochemical Society. Meeting

Bibliographic Information

Copper interconnects, new contact and barrier metallurgies/structures, and low-k interlevel dielectrics III : at the 208th ECS meeting, October 16-21, 2005, Los Angeles, California, USA

[editors, G. S. Mathad ... [et al.]]

（ECS transactions, vol. 1, no. 11）

Electrochemical Society, c2006

Note

"Sponsoring Divisions: Dielectric Science and Technology, Electronics and Photonics, Electrodeposition."

Includes bibliographical references and indexes

Details

• NCID: BA81203303
• ISBN:
  • 1566774993
• Country Code: us
• Title Language Code: eng
• Text Language Code: eng
• Place of Publication: Pennington, N.J.
• Pages/Volumes: 186 p.
• Size: 24 cm
• Classification:
  • LCC : TK7874
• Subject Headings:
  • LCSH : Integrated circuits -- Materials -- Congresses
  • LCSH : Electroplating -- Congresses
  • LCSH : Copper -- Congresses
  • LCSH : Dielectric films -- Congresses
• Parent Bibliography ID:
  • BA78566502