Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

著者

• International Conference on Silicon Carbide and Related Materials
• Devaty, Robert Philip
• Larkin, David J
• Saddow, Stephen E

書誌事項

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

edited by Robert P. Devaty, senior editor ; David J. Larkin, Stephen E. Saddow, associate editor

（Materials science forum, v. 527-529）

Trans Tech Publications, c2006

• set
• pt. 1
• pt. 2

注記

Includes bibliographical references and index

内容説明・目次

内容説明

Volume is indexed by Thomson Reuters CPCI-S (WoS). Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.

目次

Reduction of Dislocations in the Bulk Growth of SiC Crystals The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single Crystals Fundamental Limitations of SiC PVT Growth Reactors with Cylindrical Heaters Halide-CVD Growth of Bulk SiC Crystals Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiC Enhanced Carrier Lifetime in Bulk-Grown 4H-SiC Substrates Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots Via Physical Vapor Transport (PVT) Growth and Characterization of Large Diameter 6H and 4H SiC Single Crystals Growth of SiC Boules with Low Boron Concentration Resistivity Distribution in Undoped 6H-SiC Boules and Wafers The Method for Enhancing Nitrogen Doping in 6H-SiC Single Crystals Grown by Sublimation Process: The Effect of Si Addition in SiC Powder Source A Study of Nitrogen Incorporation in PVT Growth of n+ 4H SiC In Situ Observation of Mass Transfer in the CF-PVT Growth Process by X-Ray Imaging Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals Processing of Poly-SiC Substrates with Large Grains for Wafer-Bonding Modeling and Experimental Verification of SiC M-PVT Bulk Crystal Growth Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design Active Thermal Interaction of Source and Crystal Surfaces in PVT SiC Crystal Growth The Influence of SiC Powder Source on 6H-SiC Single Crystals Grown by the Sublimation Method Polytype Control in 6H-SiC Grown via Sublimation Method Characterization of Bulk <111> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method Hybrid Physical-Chemical Vapor Transport Growth of SiC Bulk Crystals SiC HTCVD Simulation Modified by Sublimation Etching Gas Fed Top-Seeded Solution Growth of Silicon Carbide Growth of SiC Single Crystal from Si-C-(Co, Fe) Ternary Solution Solution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation Technique Growth of Cubic Silicon Carbide Crystals from Solution Recent Progress of SiC Hot-Wall Epitaxy and Its Modeling Challenges in Large-Area Multi-Wafer SiC Epitaxy for Production Needs Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices Investigation of In-Grown Dislocations in 4H-SiC Epitaxial Layers 4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness SiC Warm-Wall Planetary VPE Growth on Multiple 100-mm Diameter Wafers Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process Lower-Temperature Epitaxial Growth of 4H-SiC Using CH3Cl Carbon Gas Precursor Investigation of the Mechanism and Growth Kinetics of Homoepitaxial 4H-SiC Growth Using CH3Cl Carbon Precursor Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition Highly Uniform SiC Epitaxy for MESFET Fabrication Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization High Purity SiC Epitaxial Growth by Chemical Vapor Deposition Using CH3SiH3 and C3H8 Sources Selective Etching of Micropipes During Initial Homoepitaxial Growth Stage on Nearly On-Axis 4H-SiC Substrates Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena Homoepitaxial Growth of Iron-Doped 4H-SiC Using BTMSM and t-Butylferrocene Precursors for Semi-Insulating Property Epitaxial Growth of 4H-SiC on 4 Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD Epitaxial Growth of 4H-SiC {0001} with Large Off-Angles by Chemical Vapor Deposition Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiC Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy Ab Initio Studies of the Surface Reaction of Si2C and SiC2 with Si on the 4H-SiC (000-1) Surface Thick Epitaxial Layers on 4 Off-Oriented 4H-SiC Suited for PiN-Diodes with Blocking Voltages above 6.5 kV Growth of Low Basal Plane Dislocation Density SiC Epitaxial Layers Experimental Observations of Extended Growth of 4H-SiC Webbed Cantilevers SiC Migration Enhanced Embedded Epitaxial (ME3) Growth Technology CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates Studies on Selective Growth and In Situ Etching of 4H-SiC Using a TaC Mask 6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1-Off Substrate by Closed-Space Sublimation Method Epitaxial Growth of 4H-SiC (0001) by Sublimation Method Using Horizontal Furnace Using Vapour-Liquid-Solid Mechanism for SiC Homoepitaxial Growth on on-axis -SiC (0001) at Low Temperature Improvement of 4H-SiC Selective Epitaxial Growth by VLS Mechanism Using Al and Ge Based Melts Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas Structure Evolution of 3C-SiC on Cubic and Hexagonal Substrates Single-Domain 3C-SiC Epitaxially Grown on 6H-SiC by the VLS Mechanism 'Switch-Back Epitaxy' as a Novel Technique for Reducing Stacking Faults in 3C-SiC Growth Acceleration in FLASiC Assisted Short Time Liquid Phase Epitaxy by Melt Modification Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD Selective Epitaxial Growth of 3C-SiC on Si Using Hexamethyldisilane in a Resistance Heated MOCVD Reactor Growth of 3C-SiC on Si Molds for MEMS Applications Nitrogen-Doping of Polycrystalline 3C-SiC Films Deposited by Low Pressure Chemical Vapor Deposition Multi-Scale Simulation of MBE-Grown SiC/Si Nanostructures Theory of Dislocations in SiC: The Effect of Charge on Kink Migration Structure of Carrot Defects in 4H-SiC Epilayers Characterization of SiC Crystals by Using Deep UV Excitation Raman Spectroscopy Structures of Comets in a Homoepitaxially Grown 4H-SiC Film Studied by DUV Micro-Raman Spectroscopy Raman Scattering Analyses of Stacking Faults in 3C-SiC Crystals Observation of Free Carrier Redistribution Resulting from Stacking Fault Formation in Annealed 4H-SiC Stacking Faults and 3C Quantum Wells in Hexagonal SiC Polytypes Silicon Carbide: A Playground for 1D-Modulation Electronics Peierls Barriers and Core Properties of Partial Dislocations in SiC Characterization of Stacking Fault-Induced Behavior in 4H-SiC p-i-n Diodes Recombination Behaviour of Stacking Faults in SiC p-i-n Diodes Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers Observation of Shrinking and Reformation of Shockley Stacking Faults by PL Mapping Investigation of Mechanical Stress-Induced Double Stacking Faults in (11-20) Highly N-Doped 4H-SiC Combining Optical Microscopy, TEM, Contrast Simulation and Dislocation Core Reconstruction Overlapping Shockley/Frank Faults in 4H-SiC PiN Diodes Examining Dislocations in SiC Epitaxy by Light Emission from Simple Diode Structures Photoemission of 4H-SiC pin-Diodes Epitaxied by the Sublimation Method Investigation of Structural Stability in 4H-SiC Structures with Heavy Ion Implanted Interface Origin of Surface Morphological Defects in 4H-SiC Homoepitaxial Films Structure of "Star" Defect in 4H-SiC Substrates and Epilayers Synchrotron X-ray Topographic Analysis of Dislocation Structures in Bulk SiC Single Crystal Simulation of Threading Edge Dislocation Images in X-Ray Topographs of Silicon Carbide Homo-Epilayers Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers Why Are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations During SiC Epitaxy? 3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method Effect of Crystal Defects on Reverse I-V Characteristics of 4H-SiC APDs Structural Defects and Critical Electric Field in 3C-SiC Giant Burgers Vector Micropipe-Dislocations in Silicon Carbide Investigated by Atomic Force Microscopy Open Core Dislocations and Surface Energy of SiC Comparison between Measurement Techniques Used for Determination of the Micropipe Density in SiC Substrates A New Method of Mapping and Counting Micropipes in SiC Wafers Identification of Polytypes in Sublimation Grown 4H-SiC Crystals by High Resolution X-Ray Diffractometry Optical Studies of Deep Centers in Semi-Insulating SiC Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques High Energy Local Vibrational Modes of Carbon Aggregates in SiC: Experimental and Theoretical Insight Non-Equilibrium Carrier Diffusion and Recombination in Semi-Insulating PVT Grown Bulk 6H-SiC Crystals Origin of the Up-Conversion Process in 4H SiC A Combined Photoluminescence and Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC Investigation of the Displacement Threshold of Si in 4H SiC Long Distance Point Defect Migration in Irradiated SiC Observed by Deep Level Transient Spectroscopy Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiC Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers Deep Electron and Hole Traps in 6H-SiC Bulk Crystals Grown by the Halide Chemical Vapor Deposition Deep Hole Traps in As-Grown 4H-SiC Epilayers Investigated by Deep Level Transient Spectroscopy Deep Level near EC - 0.55 eV in Undoped 4H-SiC Substrates Deep Traps in High-Purity Semi-Insulating 6H-SiC Substrates: Thermally Stimulated Current Spectroscopy Quenching Photoconductivity and Photoelectric Memory in 6H-SiC Deep Level Point Defects in Semi-Insulating SiC Divacancy and Its Identification: Theory Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC Thermal Evolution of Defects in Semi-Insulating 4H SiC Evidence of the Ground Triplet State of Silicon-Carbon Divacancies (P6, P7 Centers) in 6H SiC: An EPR Study Signature of the Negative Carbon Vacancy-Antisite Complex Electron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4H-SiC Relationship between the EPR SI-5 Signal and the 0.65 eV Electron Trap in 4H- and 6H-SiC Polytypes Carbon Related Split-Interstitials in Electron-Irradiated n-type 6H-SiC Identification of the Triplet State N-V Defect in Neutron Irradiated Silicon Carbide by Electron Paramagnetic Resonance Possible Role of Hydrogen within the So-Called X Center in Semi-Insulating 4H-SiC Trapping Recombination Process and Persistent Photoconductivity in Semi-Insulating 4H SiC Identification of Deep Level Defects in SiC Bipolar Junction Transistors Vacancy Defects Induced by Low Energy Electron Irradiation in 6H and 3C-SiC Monocrystals Characterized by Positron Annihilation Spectroscopy and Electron Paramagnetic Resonance Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy Electronic Raman Studies of Shallow Donors in Silicon Carbide Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC Photoluminescence of Phosphorous Doped SiC Shallow P Donors in 3C-, 4H- and 6H-SiC Dependence of the Ionization Energy of Phosphorous Donor in 4H-SiC on Doping Concentration Donor-Acceptor Pair Luminescence of Phosphorus-Aluminum and Nitrogen-Aluminum Pairs in 4H SiC A Theoretical Study on Doping of Phosphorus in Chemical Vapor Deposited SiC Layers New Aspects in n-type Doping of SiC with Phosphorus Conditions and Limitations of Using Low-Temperature Photoluminescence to Determine Residual Nitrogen Levels in Semi-Insulating SiC Substrates Evaluating and Improving SIMS Method for Measuring Nitrogen in SiC Kinetic Mechanisms for the Deactivation of Nitrogen in SiC Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition Accurate CsM+ SIMS Aluminum Dopant Profiling in SiC Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped -SiC Substrates Grown by the M-PVT Method In-Diffusion, Trapping and Out-Diffusion of Deuterium in 4H-SiC Substrates Electronic Structure and Magnetic Properties of Transition Metal Doped Silicon Carbide in Different Polytypes The Optical Admittance Spectroscopy of the Vanadium Donor and Acceptor Levels in Semi-Insulating 4H-SiC and 6H-SiC Luminescence and EPR Characterization of Vanadium Doped Semi-Insulating 4H SiC Co-Doping of Er-Doped SiC with Oxygen - A Promising Way Towards Efficient 1540 nm Emission at Room Temperature? Europium Induced Deep Levels in Hexagonal Silicon Carbide Cathodoluminescence Measurements and Thermal Activation of Rare Earth Doped (Tb3+, Dy3+ and Eu3+) a-SiC Thin Films Prepared by rf Magnetron Sputtering Hydrogen Nanochemistry Achieving Clean and Pre-Oxidized Silicon Carbide Surface Metallization Temperature Induced Phase Transformation on the 4H-SiC(11-20) Surface SiC Pore Surfaces: Surface Studies of 4H-SiC(1-102) and 4H-SiC(-110-2) Experimental Study of the Formation and Oxidation of the Sm/4H-SiC Surface Alloy Low Energy Ion Modification of 3C-SiC Surfaces Phonons in SiC from INS, IXS, and Ab-Initio Calculations Infrared Reflectance Study of 3C-SiC Grown on Si by Chemical Vapor Deposition Precise Determination of Thermal Expansion Coefficients Observed in 4H-SiC Single Crystals Thermal Lens Technique for the Determination of SiC Thermo-Optical Properties Wannier-Stark Ladder and Negative Differential Conductance in 4H-SiC Characterization of SiC Wafers by Photoluminescence Mapping Correlation between Room Temperature Photoluminescence and Resistivity in Semiinsulating Silicon Carbide Simple, Calibrated Analysis and Mapping of SiC Wafer Defects by Birefringence Imaging SiC Substrate Doping Profiles Using Commercial Optical Scanners Characterization of SiC Substrates Using X-Ray Rocking Curve Mapping Microwave Dielectric Loss Characterization of Silicon Carbide Wafers Columnar Pore Growth in n-Type 6H SiC A Comparison of Various Surface Finishes and the Effects on the Early Stages of Pore Formation during High Field Etching of SiC Brillouin Spectra of Porous p-Type 6H-SiC Columnar Morphology of Porous Silicon Carbide as a Protein-Permeable Membrane for Biosensors and Other Applications Novel Polycrystalline SiC Films Containing Nanoscale Through-Pores by Selective APCVD Sol-Gel Silicon Carbide for Photonic Applications Formation, Morphology and Optical Properties of SiC Nanopowder A Simple Method to Synthesize Nano-Sized 3C-SiC Powder Using Hexamethyldisilane in a CVD Reactor Fabrication and Electrical Transport Properties of CVD Grown Silicon Carbide Nanowires (SiC NWs) for Field Effect Transistor Thermodynamic Analysis of Synthetic Potentialities of the nSiC + SiO2 Starting System: SiC Gas-Phase Transport via Si(g) and CO(g) Ion Implantation Processing and Related Effects in SiC Advances in Two-Dimensional Dopant Profiling and Imaging of 4H-SiC Devices Annealing Behavior of N+-Implantation-Induced Defects in SiC at Low Temperatures Impact of Annealing Temperature Ramps on the Electrical Activation of N+ and P+ Co-Implanted SiC Layers Impurity Concentration Dependence of Recrystallization Process of Phosphorus Implanted 4H-SiC(11-20) Activation Treatment of Ion Implanted Dopants Using Hybrid Super RTA Equipment Development and Investigation on EBAS-100 of 100 mm Diameter Wafer for 4H-SiC Post Ion Implantation Annealing Correlation between Current Transport and Defects in n+/p 6H-SiC Diodes Current Analysis of Ion Implanted p+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient Ion Implanted p+/n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD Reactor Laser Direct Write Doping and Metallization Fabrication of Silicon Carbide PIN Diodes Extracting Activation and Compensation Ratio from Aluminum Implanted 4H-SiC by Modeling of Resistivity Measurements Variations in the Effects of Implanting Al at Different Concentrations into SiC Effect of Surface Orientation and Off-Angle on Surface Roughness and Electrical Properties of p-Type Impurity Implanted 4H-SiC Substrate after High Temperature Annealing Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVD Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes Observation of Thermal-Annealing Evolution of Defects in Ion-Implanted 4H-SiC by Luminsescence High Dose High Temperature Ion Implantation of Ge into 4H-SiC Hydrogen-Induced Blistering of SiC: The Role of Post-Implant Multi-Step Annealing Sequences An Approach to Improving the Morphology and Reliability of n-SiC Ohmic Contacts to SiC Using Second-Metal Contacts Ni Graphite Intercalated Compounds in Ohmic Contact Formation on SiC Ohmic Contact for C-face n-Type 4H-SiC with Reduced Graphite Precipitation Structural Properties of Titanium-Nickel Films on Silicon Carbide Following High Temperature Annealing Die Bonding Issues on Silicon Carbide Diodes Composite Ohmic Contacts to SiC Tantalum-Ruthenium Diffusion Barriers for Contacts to SiC Investigation of TiW Contacts to 4H-SiC Bipolar Junction Devices Characterization of Ti/Al Ohmic Contacts to p-Type 4H-SiC Using Cathodoluminescence and Auger Electron Spectroscopies Ohmic Contacts to P-Type Epitexial and Imlanted 4H-SiC Ohmic Contacts on p-Type SiC Using Al/C Films Ti/AlNi/W and Ti/Ni2Si/W Ohmic Contacts to P-Type SiC Nanoscale Deep Level Defect Correlation with Schottky Barriers in 4H-SiC/Metal Diodes A Study of Inhomogeneous Schottky Diodes on n-Type 4H-SiC Formation and Properties of Schottky Diodes on 4H-SiC after High Temperature Annealing with Graphite Encapsulation Diffusion Welding Techniques for Power SiC Schottky Packaging Evaluation of Schottky Barrier Height of Al, Ti, Au ,and Ni Contacts to 3C-SiC Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs - Challenges and Advances Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface Impact of Dislocations on Gate Oxide in SiC MOS Devices and High Reliability ONO Dielectrics High Channel Mobility 4H-SiC MOSFETs Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300 DegreesC NO Anneal Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide Investigation of SiO2-SiC Interface by High-Resolution Transmission Electron Microscope Interfacial Properties of SiO2 Grown on 4H-SiC: Comparison between N2O and Wet O2 Oxidation Ambient Effect of Reactive-Ion Etching on Thermal Oxide Properties on 4H-SiC Improved Dielectric and Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O Annealing Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-Interfaces Process-Dependent Charges and Traps in Dielectrics on SiC Low-Temperature Post-Oxidation Annealing Using Atomic Hydrogen Radicals Generated by High-Temperature Catalyzer for Improvement in Reliability of Thermal Oxides on 4H-SiC Off-Angle Dependence of Characteristics of 4H-SiC-Oxide Interfaces On Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor Devices Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination Forming Gas Annealing of the Carbon PbC Center in Oxidized Porous 3C- and 4H-SiC: An EPR Study Where Would the Electronic States of a Small Graphite-Like Carbon Island Contribute to the SiC/SiO2 Interface State Density Distribution? Scanning Tunnenling Spectroscopy of Oxidized 6H-SiC Surfaces Ellipsometric and XPS Studies of 4H-SiC/SiO2 Interfaces, and Sacrificial Oxide Stripped 4H-SiC Surfaces Real Time Observation of SiC Oxidation Using an In Situ Ellipsometer Fast Non-Contact Dielectric Characterization for SiC MOS Processing High Temperature Reliability of SiC n-MOS Devices up to 630 DegreesC High Inversion Channel Mobility of 4H-SiC MOSFETs Fabricated on C(000-1) Epitaxial Substrate with Vicinal (Below 1) Off-Angle PECVD Deposited TEOS for Field-Effect Mobility Improvement in 4H-SiC MOSFETs on the (0001) and (11-20) Faces Process Optimisation for <11-20> 4H-SiC MOSFET Applications Determination of the Temperature and Field Dependence of the Interface Conductivity Mobility in 4H-SiC/SiO2 Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFETs Measured in Strong Inversion Gamma Irradiation Effects on 4H-SiC MOS Capacitors and MOSFETs High Temperature Annealing Study of Al2O3 Deposited by ALCVD on n-Type 4H-SiC Experimental and First-Principles Studies of the Band Alignment at the HfO2/4H-SiC (0001) Interface Structural and Morphological Properties of Ultrathin HfO2 Dielectrics on 4H-SiC (0001) Low Temperature Deposition of HfO2 Gate Insulator on SiC by Metalorganic Chemical Vapor Deposition Electrical Properties of the La2O3/4H-SiC Interface Prepared by Atomic Layer Deposition Using La(iPrCp)3 and H2O Theoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k Dielectrics Preparation and Evaluation of Damage Free Surfaces on Silicon Carbide Selectivity and Residual Damage of Colloidal Silica Chemi-Mechanical Polishing of Silicon Carbide Augmented CMP Techniques for Silicon Carbide Characterization of Low Stress, Undoped LPCVD Polycrystalline SiC Films for MEMS Applications Mechanical Testing of Flexible Silicon Carbide Interconnect Ribbons Micromachining of Novel SiC on Si Structures for Device and Sensor Applications Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures Using a Time-Multiplexed Etch-Passivate Process Via Hole Formation in Silicon Carbide by Laser Micromachining Development of a Microstrip SiC MMIC Process Energy Efficiency: The Commercial Pull for SiC Devices SiC Device Applications: Identifying and Developing Commercial Applications Developments in Hybrid Si - SiC Power Modules Almost Ideal Thermionic-Emission Properties of Ti-Based 4H-SiC Schottky Barrier Diodes Electrothermal Issues in 4H-SiC 600 V Schottky Diodes in Forward Mode: Experimental Characterization, Numerical Simulations and Analytical Modelling A Surge Current Stable and Avalanche Rugged SiC Merged pn Schottky Diode Blocking 600V Especially Suited for PFC Applications Performance Comparison of 1.5kV 4H-SiC Buried Channel and Lateral Channel JBS Rectifiers 4.5 kV-8 A SiC-Schottky Diodes / Si-IGBT Modules Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes Design and Analysis of a Dual-Step Field-Plate Terminated 4H-SiC Schottky Diode Using SiO2/High-K Dielectric Stack Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical Properties Optimization of a SiC Super-SBD Based on Scaling Properties of Power Devices Fast Switching (41 MHz), 2.5 m *cm2, High Current 4H-SiC VJFETs for High Power and High Temperature Applications 10 kV, 87 m cm2 Normally-Off 4H-SiC Vertical Junction Field-Effect Transistors Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETs Analytical Modelling of I-V Characteristics for 4H-SiC Enhancement Mode VJFET Design Considerations of a New 4H-SiC Enhancement-Mode Lateral Channel Vertical JFET for Low-Loss Switching Operation Low On-Resistance in 4H-SiC RESURF JFETs Fabricated with Dry Process for Implantation Metal Mask SiC Smart Power JFET Technology for High-Temperature Applications Inherently Safe Resonant Reset Forward Converter Using a Bias-Enhanced SiC JFET Current Sensing for SiC Power Devices Fabrication of 700V SiC-SIT with Ultra-Low On-Resistance of 1.01m *cm2 RF and DC Characterization of Self-Aligned L-Band 4H-SiC Static Induction Transistors SiC MESFET with a Double Gate Recess High Power High Efficiency Lateral Epitaxy MESFETs in Silicon Carbide RF Characteristics of a Fully Ion-Implanted MESFET on a Bulk Semi-Insulating 4H-SiC Substrate High-Frequency SiC MESFETs with Silicon Dioxide/Silicon Nitride Passivation Double Gate 180V-128mA/mm SiC-MESFET for Power Switch Applications The Role of Residual Source/Drain Implant Damage Traps on SiC MESFET Drain I-V Characteristics Time Domain and Frequency Analysis of Random Telegraph Signal and the Contributions of G-R Centres to I-V Instabilities in 4H-SiC MESFETs SiC Power MOSFETs - Status, Trends and Challenges Development of 8 m -cm2, 1.8 kV 4H-SiC DMOSFETs 4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal Optimum Design of Short-Channel 4H-SiC Power DMOSFETs Realization of Large Area Vertical 3C-SiC MOSFET Devices High Power-Density 4H-SiC RF MOSFETs 4.3 m cm2, 1100 V 4H-SiC Implantation and Epitaxial MOSFET Fabrication and Performance of 1.2 kV, 12.9 m cm2 4H-SiC Epilayer Channel MOSFET Switching Characteristics of SiC-MOSFET and SBD Power Modules Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls The Characteristics of MOSFETs Fabricated on the Trench Sidewalls of Various Faces Using 4H-SiC (11-20) Substrates Fabrication of 4H-SiC p-Channel MOSFET with High Channel Mobility Reduction of On-Resistance in 4H-SiC Multi-RESURF MOSFETs Fabrication of 4H-SiC DIMOSFETs by High-Temperature (>1400 DegreesC) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation Furnace A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation Optimisation of 4H-SiC MOSFET Structures for Logic Applications Evolution of Drift-Free, High Power 4H-SiC PiN Diodes Measurements of Breakdown Field and Forward Current Stability in 3C-SiC pn Junction Diodes Grown on Step-Free 4H-SiC High-Temperature (up to 800 K) Operation of 6-kV 4H-SiC Junction Diodes About the Nature of Recombination Current in 4H-SiC pn Structures Charge Induced in 6H-SiC PN Diodes by Irradiation of Oxygen Ion Microbeams Demonstration of a 4H SiC Betavoltaic Cell High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications Dynamic Characteristics of 4H-SiC pin Diode on (000-1)C-Face with Small Forward Degradation Improving Switching Characteristics of 4H-SiC Junction Rectifiers Using Epitaxial and Implanted Anodes with Epitaxial Refill Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped Annealing Demonstration of High-Voltage 4H-SiC Bipolar RF Power Limiter Investigation of Packaged High-Voltage 4H SiC pin Diodes in the 20-700 DegreesC Temperature Range CM-Wave Modulator with High-Voltage 4H SiC pin Diodes Numerical Investigation of SiC Devices Performance Considering the Incomplete Dopant Ionization High Power Photoconductive Switch of 4H-SiC with Damage-Free Electrodes by Using n+-GaN Subcontact Layer Advances in SiC GTO Development and Its Applications A 1cm x 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules Simulation of High-Voltage Injection-Enhanced 4H-SiC N-Channel IGBTs with Forward Drop Approaching that of a PiN Junction Rectifier Simulations of 10 kV Trench Gate IGBTs on 4H-SiC Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs First Demonstration of 2.1 kW Output Power at 425 MHz Using 4H-SiC RF Power BJTs 1836 V, 4.7 m *cm2 High Power 4H-SiC Bipolar Junction Transistor 4H-SiC Bipolar Transistors with UHF and L-Band Operation Current Gain Dependence on Emitter Width in 4H-SiC BJTs Optimization of the Specific On-Resistance of 4H-SiC BJTs Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors High Temperature Characterization of 4H-SiC Bipolar Junction Transistors Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs 400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200 DegreesC Baseplate Temperature Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices Novel Power Si/4H-SiC Heterojunction Tunneling Transistor (HETT) SiC-Based MOSFETs for Harsh Environment Emissions Sensors Development of Ultra High Sensitivity UV Silicon Carbide Detectors Silicon Carbide Power Diodes as Radiation Detectors Minimum Ionizing Particle Detector Based on p+n Junction SiC Diode Radiation Hard Devices Based on SiC The Limit of SiC Detector Energy Resolution in Ion Spectometry Reduction of Defects in GaN Epitaxial Films Grown Heteroepitaxially on SiC Molecular Beam Epitaxy of Cubic Group III-Nitrides on Free-Standing 3C-SiC Substrates Surface Morphology of GaN Films Grown by RF-Plasma MBE Using Lateral Overgrowth and Low-Temperature Ga-rich Condition The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on SiC (0001) Substrates Growth of AlN and AlN-SiC Solid Solution by Sublimation Method Improved Structural Quality and Carrier Decay Times in GaN Epitaxy on SiN and TiN Porous Network Templates Electron Microscopy Investigation of the Role of Surface Steps in the Generation of Dislocations during MOCVD Growth of GaN on 4H-SiC Strain Relaxation in GaN/AlN Films Grown on Vicinal and On-Axis SiC Substrates Anisotropic Properties of GaN Studied by Raman Scattering Structural Characterization of Bulk AlN Single Crystals Grown from Self-Seeding and Seeding by SiC Substrates Asymmetric Interface Densities on n and p Type GaN MOS Capacitors Effects of Rapid Thermal Annealing Treatment on the Surface Band Bending of n-type GaN Studied by Surface Potential Electric Force Microscopy Quantitative Mobility Spectrum Analysis of AlGaN/GaN Heterostructures Using Variable-Field Hall Measurements Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures Structural Properties and Electrical Characteristics of Homoepitaxial GaN PiN Diodes Electron Injection from GaN to SiC and Fabrication of GaN/SiC Heterojunction Bipolar Transistors Direct Electrical Characteristics of GaN Nanowire Field Effect Transistor (FET) without Assistance of E-Beam Lithography (EBL) GaN Resistive Gas Sensors for Hydrogen Detection Atomic Layer Epitaxy of (Si1-xC1-y)Gex+y Layers on 4H-SiC Effect of the Crystallization Conditions on the Epitaxial Relationship of Si Deposited on 3C-SiC(100) Optical Characterization of ZnO Materials Grown by Modified Melt Growth Technique The Properties of n-ZnO/p-SiC Heterojunctions and their Potential Applications for Devices Role of Oxygen in Growth of Carbon Nanotubes on SiC Structural and Electrical Characteristics of Carbon Nanotubes Formed on Silicon Carbide Substrates by Surface Decomposition First Principles Modelling of Scroll-to-Nanotube Defect: Screw-Type Dislocation SNOM Investigation of Surface Morphology Changes during Cr/Au Contact Fabrication on Single-Crystal CVD Diamond

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詳細情報

• NII書誌ID(NCID): BA81357715
• ISBN:
  • 0878494251
• 出版国コード: sz
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Stafa-Zuerich ; United Kingdom
• ページ数/冊数: 2 v. (xxxiv, 1612 p.)
• 大きさ: 25 cm
• 分類:
  • DC22 : 620.193
• 件名:
  • LCSH : Silicon carbide -- Congresses
  • LCSH : Silicon carbide -- Electric properties -- Congresses
  • FREE : ICSCRM
• 親書誌ID:
  • BA00294222