Low power and low voltage circuit design with the FGMOS transistor

著者

    • Rodriguez-Villegas, Esther.

書誌事項

Low power and low voltage circuit design with the FGMOS transistor

Esther Rodriguez-Villegas.

(IET circuits, devices and systems series, 20)

Institution of Engineering and Technology, 2006.

大学図書館所蔵 件 / 1

この図書・雑誌をさがす

注記

Includes bibliographical references and index

内容説明・目次

内容説明

Motivated by consumer demand for smaller, more portable electronic devices that offer more features and operate for longer on their existing battery packs, cutting edge electronic circuits need to be ever more power efficient. For the circuit designer, this requires an understanding of the latest low voltage and low power (LV/LP) techniques, one of the most promising of which makes use of the floating gate MOS (FGMOS) transistor. Whilst a conventional MOS transistor has only one input, the FGMOS transistors often have several. This fact, along with some other remarkable properties of this very interesting device, offers the designer many extra degrees of freedom that can significantly improve power efficiency. By using FGMOS transistors in the right way - establishing appropriate relationships between their inputs - it is possible to achieve design trade-offs that are not possible with conventional MOS devices. This is especially true when power consumption and supply voltage are the main design constraints. This book demonstrates how FGMOS transistors can be used in a low voltage and low power design context. The techniques shown provide innovative solutions, often in situations where the limits of the technology in question have been pushed far below the values recommended by the manufacturer.

目次

Chapter 1: Introduction Chapter 2: The Floating Gate MOS transistor (FGMOS) Chapter 3: FGMOS - Circuit applications and design techniques Chapter 4: Low power analog continuous-time filtering based on the FGMOS in the strong inversion ohmic region Chapter 5: Low power analog continuous-time filtering based on the FGMOS in the strong inversion saturation region Chapter 6: Low power analog continuous-time Gm-C filtering using the FGMOS in the weak inversion region Chapter 7: Low power log-domain filtering based on the FGMOS transistor Chapter 8: Low power digital design based on the FGMOS threshold gate Chapter 9: Summary and conclusions

「Nielsen BookData」 より

関連文献: 1件中  1-1を表示

詳細情報

  • NII書誌ID(NCID)
    BA81780238
  • ISBN
    • 9780863416170
  • 出版国コード
    uk
  • タイトル言語コード
    eng
  • 本文言語コード
    eng
  • 出版地
    Stevenage
  • ページ数/冊数
    xiv, 304 p.
  • 大きさ
    24 cm.
  • 親書誌ID
ページトップへ