Group IV semiconductor nanostructures--2006 : symposium held November 27-December 1, 2006, Boston, Massachusetts, U.S.A.
著者
書誌事項
Group IV semiconductor nanostructures--2006 : symposium held November 27-December 1, 2006, Boston, Massachusetts, U.S.A.
（Materials Research Society symposium proceedings, v. 958）
Materials Research Society, c2007
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注記
"The papers published in this volume form a representative cross section of the presentations (both invited and contributed talks as well as posters) made during Symposium L, "Group IV Semiconductor Nanostructures," held November 27-December 1 at the 2006 MRS Fall Meeting in Boston, Massachusetts."--Pref
Includes bibliographical references and indexes
内容説明・目次
内容説明
This book focuses on advances in materials science and device applications of nanostructures composed of Si, Ge, diamond, SiGe and SiCGe. Continuous progress in the development of reproducibly grown quantum dots, wires and wells has produced a new class of functional materials and devices with characteristic dimensions less than 50nm. The broad spectrum of these devices ranges from commercially offered high-mobility transistors using strained Si to exploratory SiGe nanostructures for integrated optical interconnects and THz lasers. This book brings together researchers from chemistry, physics, biology, materials science and engineering to share and discuss both the challenges and progress towards a new generation of Si(SiGe, SiCGe)-based novel functional structures and devices. Topics include: light emission and photonic devices; Ge, SiGe and diamond nanostructures; strains, Si/Ge films and layers and Si nanocrystals.
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