Strained-Si heterostructure field effect devices

Author(s)

• Maiti, C. K.
• Chattopadhyay, Swapan
• Bera, L. K.

Bibliographic Information

Strained-Si heterostructure field effect devices

C K Maiti, S Chattopadhyay, L K Bera

（Series in materials science and engineering / B. Cantor, M. J. Goringe）

Taylor & Francis, c2007

Other Title

Strained silicon heterostructure field effect devices

Note

Includes bibliographical references and index

• NCID: BA83838521
• ISBN:
  • 9780750309936
• LCCN: 2006031518
• Country Code: us
• Title Language Code: eng
• Text Language Code: eng
• Place of Publication: New York
• Pages/Volumes: 423 p.
• Size: 25 cm
• Classification:
  • LCC : TK7871.95
  • DC22 : 621.3815/284
• Subject Headings:
  • LCSH : Metal oxide semiconductor field-effect transistors
  • LCSH : Silicon -- Electric properties
• Parent Bibliography ID:
  • BA54744457