Strained-Si heterostructure field effect devices
著者
書誌事項
Strained-Si heterostructure field effect devices
（Series in materials science and engineering / B. Cantor, M. J. Goringe）
Taylor & Francis, c2007
- タイトル別名
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Strained silicon heterostructure field effect devices
大学図書館所蔵 全5件
注記
Includes bibliographical references and index
内容説明・目次
内容説明
A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated with the front-end aspects of extending CMOS technology via strain engineering. The book provides the basis to compare existing technologies with the future technological directions of silicon heterostructure CMOS.
After an introduction to the material, subsequent chapters focus on microelectronics, engineered substrates, MOSFETs, and hetero-FETs. Each chapter presents recent research findings, industrial devices and circuits, numerous tables and figures, important references, and, where applicable, computer simulations. Topics covered include applications of strained-Si films in SiGe-based CMOS technology, electronic properties of biaxial strained-Si films, and the developments of the gate dielectric formation on strained-Si/SiGe heterolayers. The book also describes silicon hetero-FETs in SiGe and SiGeC material systems, MOSFET performance enhancement, and process-induced stress simulation in MOSFETs.
From substrate materials and electronic properties to strained-Si/SiGe process technology and devices, the diversity of R&D activities and results presented in this book will no doubt spark further development in the field.
目次
Introduction. Strain Engineering in Microelectronics. Strain-Engineered Substrates. Electronic Properties of Engineered Substrates. Gate Dielectrics on Engineered Substrates. Heterostructure SiGe/SiGeC MOSFETs. Strained-Si Heterostructure MOSFETs. Modeling and Simulation of Hetero-FETs.
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