Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy

Author(s)

• International Symposium on Silicon Molecular Beam Epitaxy
• Electrochemical Society. Meeting
• Bean, John C. (John Condon)
• Schowalter, Leo J.
• Electrochemical Society. Electronics Division
• Electrochemical Society. Dielectrics and Insulation Division

Bibliographic Information

Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy

edited by John C. Bean, Leo J. Schowalter ; assistant editors, Hiroshi Ishiwara, Erich Kasper, Evan H.C. Parker

（Proceedings / [Electrochemical Society], v. 88-8）

Electrochemical Society, c1988

Other Title

Silicon molecular beam epitaxy II

Silicon molecular beam epitaxy 2

Note

Includes bibliographical references and index

"... held on October 20-23, 1987 in Honolulu, Hawaii as a part of the 172nd Meeting of the Electrochemical Society" -- on pref

Sponsored by: the Electronics and the Dielectrics and Insulation Divisions of the Electrochemical Society

Details

• NCID: BA84955371
• LCCN: 88080747
• Country Code: us
• Title Language Code: eng
• Text Language Code: eng
• Place of Publication: Pennington, NJ
• Pages/Volumes: x, 619 p.
• Size: 23 cm
• Classification:
  • LCC : QC611.6.M64
  • DC20 : 530.4/1
• Subject Headings:
  • LCSH : Molecular beam epitaxy -- Congresses
  • LCSH : Silicon -- Congresses
• Parent Bibliography ID:
  • BA01323290