Dilute III-V nitride semiconductors and material systems : physics and technology
著者
書誌事項
Dilute III-V nitride semiconductors and material systems : physics and technology
（Springer series in materials science, 105）
Springer, c2008
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注記
Includes bibliographical references and index
内容説明・目次
内容説明
This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
目次
Energetic Beam Synthesis of Dilute Nitrides and Related Alloys.- Impact of Nitrogen Ion Density on the Optical and Structural Properties of MBE Grown GaInNAs/GaAs (100) and (111)B Quantum Wells.- Electronic Band Structure of Highly Mismatched Semiconductor Alloys.- Electronic Structure of GaNxAs1?x Under Pressure.- Experimental Studies of GaInNAs Conduction Band Structure.- Electromodulation Spectroscopy of GaInNAsSb/GaAs Quantum Wells: The Conduction Band Offset and the Electron Effective Mass Issues.- The Effects of Nitrogen Incorporation on Photogenerated Carrier Dynamics in Dilute Nitrides.- Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells.- Assessing the Preferential Chemical Bonding of Nitrogen in Novel Dilute III-As-N Alloys.- The Hall Mobility in Dilute Nitrides.- Spin Dynamics in Dilute Nitride.- Optical and Electronic Properties of GaInNP Alloys: A New Material for Lattice Matching to GaAs.- Properties and Laser Applications of the GaP-Based (GaNAsP)-Material System for Integration to Si Substrates.- Comparison of the Electronic Band Formation and Band Structure of GaNAs and GaNP.- Doping, Electrical Properties and Solar Cell Application of GaInNAs.- Elemental Devices and Circuits for Monolithic Optoelectronic-Integrated Circuit Fabricated in Dislocation-Free Si/III-V-N Alloy Layers Grown on Si Substrate.- Analysis of GaInNAs-Based Devices: Lasers and Semiconductor Optical Amplifiers.- Dilute Nitride Quantum Well Lasers by Metalorganic Chemical Vapor Deposition.- Interdiffused GaInNAsSb Quantum Well on GaAs for 1,300-1,550 nm Diode Lasers.- Vertical Cavity Semiconductor Optical Amplifiers Based on Dilute Nitrides.- Dilute Nitride Photodetector and Modulator Devices.
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