Silicon carbide and related materials 2006 : ECSCRM 20006 [i.e. 2006], Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006
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Silicon carbide and related materials 2006 : ECSCRM 20006 [i.e. 2006], Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006
（Materials science forum, v. 556-557）
Trans Tech Publications, c2007
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Includes bibliographical references and index
Description and Table of Contents
Description
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are wide-bandgap semiconductors which also possess extraordinary chemical, electrical and optical properties that make them uniquely attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to survive harsh operating conditions.
Table of Contents
Quality Aspects for the Production of SiC Bulk Crystals
An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method
Growth and Characterization of 13C Enriched 4H-SiC for Fundamental Materials Studies
Growth and Characterization of High-Quality 6H-SiC (0115) Bulk Crystals
Growth Induced Stacking Fault Formation in 4H-SiC
Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method
Effect of Growth Conditions on Cubic Silicon Carbide Crystals Grown from Silicon Solution
Growth and Electrical Characterization of 4H-SiC Epilayers
Growth of SiC from a Liquid Phase at Low Temperature
Thick Epilayer for Power Devices
4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate
A Designed Experiment Approach to Improvement and Understanding of the SiC Epitaxial Growth Process
Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling
Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers
Comparison of Chlorine Based In Situ Etching of 4H SiC Substrates
CVD of 6H-SiC on Non-Basal Quasi Polar Faces
Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices
Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal Gradient
Effect of Additional Silane on In Situ H2 Etching prior to 4H-SiC Homoepitaxial Growth
Epitaxial Growth of 4H-SiC on (000-1) C-Face Substrates by Cold-Wall and Hot-Wall Chemical Vapor Deposition
Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route
Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers
High Quality Uniform SiC Epitaxy for Power Device Applications
High SiC Growth Rate Obtained by Vapour-Liquid-Solid Mechanism
Homoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection
Homoepitaxial Growth of Vanadium-Doped 4H-SiC Using Bis-Trimethylsilylmethane and Verrocene Precursors
Improved Mesa Designs for the Growth of Thin 4H-SiC Homoepitaxial Cantilevers
In Situ Mass Spectrometry for Chemical Identification in SiC Epitaxial Deposition
In Situ Measurement of Nitrogen during Growth of 4H-SiC by CVD
Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate
Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive
Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization
Progress in Cold-Wall Epitaxy for 4H-SiC High-Power Devices
Scaling of Chlorosilane SiC CVD to Multi-Wafer Epitaxy System
Selective Epitaxial Growth of 4H-SiC with SiO2 Mask by Low-Temperature Halo-Carbon Homoepitaxial Method
SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties
Very High Growth Rate Epitaxy Processes with Chlorine Addition
SiC Heteropolytype Structures Grown by Sublimation Epitaxy
Carbonization of Porous Silicon for 3C-SiC Growth
Carbonization Study of Different Silicon Orientations
Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates
Heavily Doped Polycrystalline 3C-SiC Growth on SiO2/Si (100) Substrates for Resonator Applications
Hetero-Epitaxial Growth of 3C-SiC on Si (111) by Plasma Assisted CVD
How to Grow 3C-SiC Single Domain on -SiC(0001) by Vapor-Liquid-Solid Mechanism
Increased Growth Rates of 3C-SiC on Si (100) Substrates via HCl Growth Additive
Initial Growth in 3C-SiC Sublimation Epitaxy on 6H-SiC
Mechanism of Orientation Selection for the Growth Of (111) Twin Boundary Free 3C-SiC Single Crystals on Hexagonal Basis
Morphology and Stress Control in UHVCVD of 3C-SiC(100) on Si
Trends in Dopant Incorporation for 3C-SiC Films on Silicon
Mosaicity and Wafer Bending in SiC Wafers as Measured by Double and Triple Crystal X-Ray Rocking Curve and Peak Position Maps
6H-SiC Crystals Grown in [015] and [001] Directions Characterized by High Energy Triple-Axis X-Ray Diffraction
Absence of Dislocation Motion in 3C-SiC pn Diodes under Forward Bias
An X-Ray Topographic Analysis of the Crystal Quality of Globally Available SiC Wafers
Behavior of Basal Plane Dislocations and Low Angle Grain Boundary Formation in Hexagonal Silicon Carbide
Comparative Investigation between X-Ray Diffraction and Cross Polarization Mapping of 4H-SiC Wafers Off-Cut 4 Degrees Towards (11-20)
Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping
Defect Etching of Non-Polar and Semi-Polar Faces in SiC
Dislocation in 4H n+ SiC Substrates and their Relationship with Epilayer Defects
Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging
Epitaxial Growth on Metal Bonded SiC Substrates: Transmission Electron Microscopy and Photoluminescence
Impact of n-Type versus p-Type Doping on Mechanical Properties and Dislocation Evolution during SiC Crystal Growth
Influence of Growth Temperature on the Evolution of Dislocations during PVT Growth of Bulk SiC Single Crystals
In Situ X-Ray Measurements of Defect Generation during PVT Growth of SiC
Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process
Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation
Partial Dislocations under Forward Bias in SiC
Properties of Thermally Etched 4H-SiC by Chlorine-Oxygen System
The DI Defect is Associated with a Stacking Fault?
Trends in Commercially Available SiC Substrates
Whole-Wafer Mapping of Dislocations in 4H-SiC Epitaxy
XRD and Photoluminescence Whole-Wafer Mapping of 4H-SiC Wafers
XRD Characterization of the 6H-SiC Single Crystal Grown from Si-C-Ti Ternary Solution
(Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory
Photoluminescence Investigation of Defects Created by Electron Bombardment of 4H-SiC
A Study of the DII Defect after Electron Irradiation and Annealing of 4H SiC
Carrier Lifetime Analysis by Microwave Photoconductive Decay ( -PCD) for 4H SiC Epitaxial Wafers
Contactless Electrical Defect Characterization and Topography of a-Plane Grown Epitaxial Layers
Deep Levels in Electron-Irradiated n- and p-type 4H-SiC Investigated by Deep Level Transient Spectroscopy
Dependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiC
Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes
Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC
Electrical Characterisation of 4H-SiC Epitaxial Samples Treated by Hydrogen or Helium
Electric-Field Screening Effects in the Micro-Photoluminescence Spectra of As-Grown Stacking Faults in 4H-SiC
EPR, ESE and Pulsed ENDOR Study of Nitrogen Related Centers in 4H-SiC Wafers Grown by Different Technologies
Excess Carrier Lifetimes in a Bulk p-Type SiC Wafer Measured by the Microwave Photoconductivity Decay Method
FTIR Ellipsometry Analysis of the Internal Stress in SiC/Si MEMS
Impurity Conduction in Silicon Carbide
Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC
Investigation of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Diodes
Mechanisms of Decrease in Hole Concentration in Al-Doped 4H-SiC by Irradiation of 200 keV Electrons
Micro-Photoluminescence Mapping of Defect Structures in SiC Wafers
Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer
Nitrogen Donor Aggregation in 4H-SiC: g-Tensor Calculations
Nonequilibrium Carrier Dynamics in DPB-Free 3C-SiC Layer Studied by Dynamic Grating Technique in Wide Excitation and Temperature Range
Optical and Electron Paramagnetic Resonance Study of Sponge Silicon Carbide Prepared by Direct Synthesis
Optical Investigation of Cubic SiC Layers Grown on Hexagonal SiC Substrates by CVD and VLS
Photoluminescence of 6H-SiC Nanostructures
Properties of Different Room-Temperature Photoluminescence Bands in 4H-SiC Substrates Investigated by Mapping Techniques
Raman Spectra of a 4H-SiC Epitaxial Layer on Porous and Non-Porous 4H-SiC Substrates
Reverse Biased Electrochemical Etching of SiC-SBD
Simultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance Spectroscopy
Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure
The Premature Breakdown in 6H-SiC p-n Junction
Theory of the Stark Effect on the Donor Levels in 4H Silicon Carbide
Point Defects and their Aggregation in Silicon Carbide
A Theoretical Study on Aluminium-Related Defects in SiC
Deep Acceptor Levels of the Carbon Vacancy-Carbon Antisite Pairs in 4H-SiC
Electron Paramagnetic Resonance Study of Carbon Antisite-Vacancy Pair in p-Type 4H-SiC
Evaluation of Unintentionally Doped Impurities in Silicon Carbide Substrates Using Neutron Activation Analysis
Influence Of Growth Conditions on Irradiation Induced Defects in 4H-SiC
Intrinsic Defects in Semi-Insulating SiC: Deep Levels and their Roles in Carrier Compensation
New Insight in Scandium-Mediated Growth Techniques: Sc-Related Defects in 4H-SiC and 6H-SiC
Point Defects in 4H SiC Grown by Halide Chemical Vapor Deposition
SIMS Investigation of Ge Incorporation in 3C-SiC Layers Grown from Ge-Si Melts
Atomic Crack Defects Developing at Silicon Carbide Surfaces Studied by STM, Synchrotron Radiation-Based -spot XPS and LEEM
Sodium Enhanced Oxidation of Si-Face 4H-SiC: A Method to Remove Near Interface Traps
Ab Initio Study of Clean and Hydrogen-Saturated Unreconstructed SiC{0001} Surfaces
An Approach to Model Temperature Effects of Interface Traps in 4H-SiC
Conductive Atomic Force Microscopy Studies on the Reliability of Thermally Oxidized SiO2/4H-SiC
Electronic Properties of Thermally Oxidized Single-Domain 3C-SiC/6H-SiC Grown by Vapour-Liquid-Solid Mechanism
Ellipsometric and MEIS Studies of 4H-SiC/Si/SiO2 and 4H-SiC/SiO2 Interfaces for MOS Devices
Etching of 4 Degrees and 8 Degrees 4H-SiC Using Various Hydrogen-Propane Mixtures in a Commercial Hot-Wall CVD Reactor
Formation of Deep Traps at the 4H-SiC/SiO2 Interface when Utilizing Sodium Enhanced Oxidation
Generation of Amorphous SiO2/SiC Interface Structure by the First-Principles Molecular Dynamics Simulation
Initial Stages of the Graphite-SiC(0001) Interface Formation Studied by Photoelectron Spectroscopy
Nanowire Reconstruction on the 4H-SiC(1102) Surface
Structure of the 3C-SiC(100) 5x2 Surface Reconstruction Investigated by Synchrotron Radiation Based Grazing Incidence X-Ray Diffraction
The Al2O3/4H-SiC Interface Investigated by Thermal Dielectric Relaxation Current Technique
The Mechanism of Interface State Passivation by NO
Two Dimensional Imaging of the Laterally Inhomogeneous Au/4H-SiC Schottky Barrier by Conductive Atomic Force Microscopy
XPS Study of the Electronic Properties of the Ce/4H-SiC Interface, and the Formation of the SiO2/Ce2Si2O7/4H-SiC Interface Structure upon Oxidation
Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum
Post-Implantation Annealing of SiC: Relevance of the Heating Rate
Achieving Low Sheet Resistance from Implanted P-Type Layers in 4H-SiC Using High Temperature Graphite Capped Annealing
Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process
Comparison of Graphite and BN/AlN Annealing Caps for Ion Implanted SiC
Electrical Properties of N Ion Implanted Layer in 3C-SiC(100) Grown on Self-Standing 3C-SiC Substrate
Encapsulating Annealing of N+ Implanted 4H-SiC by Diamond-Like-Carbon Film
High Temperature Implantation of Aluminum in 4H Silicon Carbide
Isochronal Annealing Study of Deep Levels in Hydrogen Implanted p-Type 4H-SiC
Modification of Surface Layer during High Temperature Annealing and its Effects on the SiC Diode Characteristics
Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with 30Si Isotope: Electron Paramagnetic Resonance Study
Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation
Selenium and Tellurium Double Donors in SiC
Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC
Dynamical Simulation of SiO2/4H-SiC(0001) Interface Oxidation Process: from First-Principles
Trap Assisted Gas Sensing Mechanism in MISiC Capacitors
4H-SiC Metal-Oxide-Semiconductor (MOS) Capacitors Fabricated by Oxidation in a Tungsten Lamp Furnace in Combination with a Microwave Plasma and Subsequent Deposition of Al2O3
A Comparative Study of Surface Passivation on SiC BJTs with High Current Gain
Acceleration Factors in Acceleration Life Test of Thermal Oxides on 4H-SiC Wafers
Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose
Electrical Properties of Atomic-Layer-Deposited La2O3/Thermal-Nitrided SiO2 Stacking Dielectric on 4H-SiC(0001)
Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-Deposited SixNy
Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation
Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K Application
Interface Properties of SiO2/4H-SiC(0001) with Large Off-Angles Formed by N2O Oxidation
Modification of SiO2/4H-SiC Interface Properties by High-Pressure H2O Vapor Annealing
Optimizing the Thermally Oxidized 4H-SiC MOS Interface for P-Channel Devices
Study of Polyimide Films as Passivation for High Temperature High Voltage Silicon Carbide Devices
Time-Dependent Dielectric Breakdown of Thermal Oxides on 4H-SiC
Trap Assisted Conduction in High K Dielectric Capacitors on 4H-SiC
X-Ray and AFM Analysis of Al2O3 Deposited by ALCVD on n-Type 4H-SiC
A Case for High Temperature, High Voltage SiC Bipolar Devices
Ab Initio Study of the Structural and Electronic Properties of the Graphene/SiC{0001} Interface
Development of Low Resistance Al/Ti Stacked Metal Contacts to p-Type 4H-SiC
Electronic Structure of Graphite/6H-SiC Interfaces
Evaluation of Specific Contact Resistance of Al, Ti, and Ni Contacts to N Ion Implanted 3C-SiC(100)
High Temperature Direct Double Side Cooled Inverter Module for Hybrid Electric Vehicle Application
Interface Reactions and Electrical Properties of Ta/4H-SiC Contacts
Low Resistance Cathode Metallization and Die-Bonding in Silicon Carbide P-N Junction Diodes
Low Specific Contact Resistance to 3C-SiC Grown on (100) Si Substrates
Nanolayered Au/Ti/Al Ohmic Contacts to P-Type SiC: Electrical, Morphological and Chemical Properties Depending on the Contact Composition
Plasma Etching for Backside Wafer Thinning of SiC
Sloped Sidewalls in 4H-SiC Mesa Structure Formed by a Cl2-O2 Thermal Etching
The Schottky Parameter Test for Combined Diffusion Welded and Sputter Large Area Contacts
Nano-Columnar Pore Formation in the Photo-Electrochemical Etching of n-Type 6H SiC
Porosity Dependence of the Velocity of Surface and Bulk Acoustic Waves in Porous Silicon Carbide Films
Damage-Free Planarization of 4H-SiC (0001) by Catalyst-Referred Etching
High Throughput SiC Wafer Polishing with Good Surface Morphology
Polishing Characteristics of 4H-SiC Si-Face and C-Face by Plasma Chemical Vaporization Machining
4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates
4H-SiC Power BJTs with High Current Gain and Low On-Resistance
9 kV 4H-SiC IGBTs with 88 m *cm2 of R diff, on
A Comparison of High Temperature Performance of SiC DMOSFETs and JFETs
Critical Reliability Issues for SiC Power MOSFETs Operated at High Temperature
Electrical Properties of p-Channel MOSFETs Fabricated on 4H- and 6H-SiC
Fabrication and Characterization of 4H-SiC MOSFET with MOCVD-Grown Al2O3 Gate Insulator
Hall Effect and Admittance Measurements of n-Channel 6H-SiC MOSFETs
High Frequency 4H-SiC MOSFETs
High Temperature Characterisation of 4H-SiC VJFET
Improvement of Electrical Characteristics of Ion Implanted 4H-SiC MESFET on a Semi-Insulating Substrate
Increased Channel Mobility in 4H-SiC UMOSFETs Using On-Axis Substrates
Investigation of Drain Current Saturation in 4H-SiC MOSFETs
Lateral 4H-SiC MOSFETs with Low On-Resistance by Using Two-Zone Double RESURF Structure
Low Output Capacitance 1500V 4H-SiC MOSFETs with 8 m cm2 Specific On-Resistance
Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations
Realization of Low On-Resistance 4H-SiC Power MOSFETs by Using Retrograde Profile in P-Body
SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 DegreesC
SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps
Simulation Study of High-k Materials for SiC Trench MOSFETs
Temperature Stability of Heteropolytypic 6H/3C FETs
Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs
Reliability of SiC Power Devices Against Cosmic Radiation-Induced Failure
600 V 100 A 4H-SiC Junction Barrier Schottky Diode with Guard Rings Termination
Breakdown Voltage Characteristics of FLR-Assisted SiC-SBD Formed by Aluminum Metal Junction Edge Termination
Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond
FLR Geometry Dependence of Breakdown Voltage Characteristics for JBS-Assisted FLR SiC-SBD
High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension
Improvement of SBD Electronic Characteristics Using Sacrificial Oxidation Removing the Degraded Layer from SiC Surface after High Temperature Annealing
Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)
The Influence of In-Grown Stacking Faults on the Reverse Current-Voltage Characteristics of 4H-SiC Schottky Barrier Diodes
Bipolar SiC-Diodes - Challenges Arising from Physical and Technological Aspects
Progress on the Development of 10 kV 4H-SiC Pin Diodes for High Current/High Voltage Power Handling Applications
1.2 kV Pin Diodes with SiCrystal Epiwafer
Behaviour of 4H-SiC pin Diodes Studied by Numerical Device Simulation
Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes
Degradation of Charge Collection Efficiency Obtained for 6H-SiC n+p Diodes Irradiated with Gold Ions
Effects of Very High Neutron Fluence Irradiation on p+n Junction 4H-SiC Diodes
Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process
Evaluation of Termination Techniques for 4H-SiC Pin Diodes and Trench JFETs
Fabrication of pn-Junction Diode for N+ Implanted 4H-SiC(0001) Annealed by EBAS
Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum
Potential Benefits of Silicon Carbide Zener Diodes Used as Components of Intrinsically Safe Barriers
4H-SiC High Temperature Spectrometers
4H-SiC Schottky Array Photodiodes for UV Imaging Application Based on the Pinch-off Surface Effect
Fabrication and Test of 3C-SiC Electrostatic Resonators
Study of Dark Currents in 4H-SiC UV APDs with Separate Absorption and Multiplication Regions
Surface Functionalization of SiC for Biosensor Applications
The Influence of the Extreme Fluences of 8 MeV Protons on Characteristics of SiC Nuclear Detectors Produced by Al Implantation
SiC-Based Power Converters for High Temperature Applications
Analysis of Novel Packaging Techniques for High Power Electronics in SiC
Comparison of Bipolar and Unipolar SiC Switching Devices for Very High Power Applications
Demonstration of High-Voltage SiC VJFET Cascode in a Half-Bridge Inverter
Fabrication of a Multi-Chip Module of 4H-SiC RESURF-Type JFETs
High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes
High Temperature DC-DC Converter Performance Comparison Using SiC JFETs, BJTs and Si MOSFETs
Improved Efficiency in Power Factor Correction Circuits with a pn-Gated SiC FET
Microwave p-i-n Diodes and Switches Based on 4H-SiC
New Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication Process
OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes
Proposed Architecture for SiC Switches and Diodes in a Switch Mode Power Supply
Advances in AlGaN/GaN/SiC Microwave Devices
A Manipulation of Semiconducting GaN Nanowires by Dielectrophoresis Aligned Assembly Deposition (DAAD)
Current Transport in Ti/Al/Ni/Au Ohmic Contacts to GaN and AlGaN
Employing Discontinuous and Continuous Growth Modes for Preparation of AlN Nanostructures on SiC Substrates
Hot Electron Induced Current Collapse in AlGaN/GaN HEMTs
Impact of Acceptor Concentration on Electronic Properties of n+-GaN/p+-SiC Heterojunction for GaN/SiC Heterojunction Bipolar Transistor
Influence of Micropipe and Domain Boundary in SiC Substrate on the DC Characteristics of AlGaN/GaN HFET
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