Silicon carbide and related materials 2006 : ECSCRM 20006 [i.e. 2006], Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

著者

• European Conference on Silicon Carbide and Related Materials
• Wright, N. (Nick)

書誌事項

Silicon carbide and related materials 2006 : ECSCRM 20006 [i.e. 2006], Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

edited by, N. Wright ... [et al.]

（Materials science forum, v. 556-557）

Trans Tech Publications, c2007

注記

Includes bibliographical references and index

内容説明・目次

内容説明

Volume is indexed by Thomson Reuters CPCI-S (WoS). Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are wide-bandgap semiconductors which also possess extraordinary chemical, electrical and optical properties that make them uniquely attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to survive harsh operating conditions.

目次

Quality Aspects for the Production of SiC Bulk Crystals An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method Growth and Characterization of 13C Enriched 4H-SiC for Fundamental Materials Studies Growth and Characterization of High-Quality 6H-SiC (0115) Bulk Crystals Growth Induced Stacking Fault Formation in 4H-SiC Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method Effect of Growth Conditions on Cubic Silicon Carbide Crystals Grown from Silicon Solution Growth and Electrical Characterization of 4H-SiC Epilayers Growth of SiC from a Liquid Phase at Low Temperature Thick Epilayer for Power Devices 4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate A Designed Experiment Approach to Improvement and Understanding of the SiC Epitaxial Growth Process Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers Comparison of Chlorine Based In Situ Etching of 4H SiC Substrates CVD of 6H-SiC on Non-Basal Quasi Polar Faces Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal Gradient Effect of Additional Silane on In Situ H2 Etching prior to 4H-SiC Homoepitaxial Growth Epitaxial Growth of 4H-SiC on (000-1) C-Face Substrates by Cold-Wall and Hot-Wall Chemical Vapor Deposition Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers High Quality Uniform SiC Epitaxy for Power Device Applications High SiC Growth Rate Obtained by Vapour-Liquid-Solid Mechanism Homoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection Homoepitaxial Growth of Vanadium-Doped 4H-SiC Using Bis-Trimethylsilylmethane and Verrocene Precursors Improved Mesa Designs for the Growth of Thin 4H-SiC Homoepitaxial Cantilevers In Situ Mass Spectrometry for Chemical Identification in SiC Epitaxial Deposition In Situ Measurement of Nitrogen during Growth of 4H-SiC by CVD Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization Progress in Cold-Wall Epitaxy for 4H-SiC High-Power Devices Scaling of Chlorosilane SiC CVD to Multi-Wafer Epitaxy System Selective Epitaxial Growth of 4H-SiC with SiO2 Mask by Low-Temperature Halo-Carbon Homoepitaxial Method SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties Very High Growth Rate Epitaxy Processes with Chlorine Addition SiC Heteropolytype Structures Grown by Sublimation Epitaxy Carbonization of Porous Silicon for 3C-SiC Growth Carbonization Study of Different Silicon Orientations Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates Heavily Doped Polycrystalline 3C-SiC Growth on SiO2/Si (100) Substrates for Resonator Applications Hetero-Epitaxial Growth of 3C-SiC on Si (111) by Plasma Assisted CVD How to Grow 3C-SiC Single Domain on -SiC(0001) by Vapor-Liquid-Solid Mechanism Increased Growth Rates of 3C-SiC on Si (100) Substrates via HCl Growth Additive Initial Growth in 3C-SiC Sublimation Epitaxy on 6H-SiC Mechanism of Orientation Selection for the Growth Of (111) Twin Boundary Free 3C-SiC Single Crystals on Hexagonal Basis Morphology and Stress Control in UHVCVD of 3C-SiC(100) on Si Trends in Dopant Incorporation for 3C-SiC Films on Silicon Mosaicity and Wafer Bending in SiC Wafers as Measured by Double and Triple Crystal X-Ray Rocking Curve and Peak Position Maps 6H-SiC Crystals Grown in [015] and [001] Directions Characterized by High Energy Triple-Axis X-Ray Diffraction Absence of Dislocation Motion in 3C-SiC pn Diodes under Forward Bias An X-Ray Topographic Analysis of the Crystal Quality of Globally Available SiC Wafers Behavior of Basal Plane Dislocations and Low Angle Grain Boundary Formation in Hexagonal Silicon Carbide Comparative Investigation between X-Ray Diffraction and Cross Polarization Mapping of 4H-SiC Wafers Off-Cut 4 Degrees Towards (11-20) Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping Defect Etching of Non-Polar and Semi-Polar Faces in SiC Dislocation in 4H n+ SiC Substrates and their Relationship with Epilayer Defects Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging Epitaxial Growth on Metal Bonded SiC Substrates: Transmission Electron Microscopy and Photoluminescence Impact of n-Type versus p-Type Doping on Mechanical Properties and Dislocation Evolution during SiC Crystal Growth Influence of Growth Temperature on the Evolution of Dislocations during PVT Growth of Bulk SiC Single Crystals In Situ X-Ray Measurements of Defect Generation during PVT Growth of SiC Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation Partial Dislocations under Forward Bias in SiC Properties of Thermally Etched 4H-SiC by Chlorine-Oxygen System The DI Defect is Associated with a Stacking Fault? Trends in Commercially Available SiC Substrates Whole-Wafer Mapping of Dislocations in 4H-SiC Epitaxy XRD and Photoluminescence Whole-Wafer Mapping of 4H-SiC Wafers XRD Characterization of the 6H-SiC Single Crystal Grown from Si-C-Ti Ternary Solution (Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory Photoluminescence Investigation of Defects Created by Electron Bombardment of 4H-SiC A Study of the DII Defect after Electron Irradiation and Annealing of 4H SiC Carrier Lifetime Analysis by Microwave Photoconductive Decay ( -PCD) for 4H SiC Epitaxial Wafers Contactless Electrical Defect Characterization and Topography of a-Plane Grown Epitaxial Layers Deep Levels in Electron-Irradiated n- and p-type 4H-SiC Investigated by Deep Level Transient Spectroscopy Dependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiC Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC Electrical Characterisation of 4H-SiC Epitaxial Samples Treated by Hydrogen or Helium Electric-Field Screening Effects in the Micro-Photoluminescence Spectra of As-Grown Stacking Faults in 4H-SiC EPR, ESE and Pulsed ENDOR Study of Nitrogen Related Centers in 4H-SiC Wafers Grown by Different Technologies Excess Carrier Lifetimes in a Bulk p-Type SiC Wafer Measured by the Microwave Photoconductivity Decay Method FTIR Ellipsometry Analysis of the Internal Stress in SiC/Si MEMS Impurity Conduction in Silicon Carbide Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC Investigation of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Diodes Mechanisms of Decrease in Hole Concentration in Al-Doped 4H-SiC by Irradiation of 200 keV Electrons Micro-Photoluminescence Mapping of Defect Structures in SiC Wafers Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer Nitrogen Donor Aggregation in 4H-SiC: g-Tensor Calculations Nonequilibrium Carrier Dynamics in DPB-Free 3C-SiC Layer Studied by Dynamic Grating Technique in Wide Excitation and Temperature Range Optical and Electron Paramagnetic Resonance Study of Sponge Silicon Carbide Prepared by Direct Synthesis Optical Investigation of Cubic SiC Layers Grown on Hexagonal SiC Substrates by CVD and VLS Photoluminescence of 6H-SiC Nanostructures Properties of Different Room-Temperature Photoluminescence Bands in 4H-SiC Substrates Investigated by Mapping Techniques Raman Spectra of a 4H-SiC Epitaxial Layer on Porous and Non-Porous 4H-SiC Substrates Reverse Biased Electrochemical Etching of SiC-SBD Simultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance Spectroscopy Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure The Premature Breakdown in 6H-SiC p-n Junction Theory of the Stark Effect on the Donor Levels in 4H Silicon Carbide Point Defects and their Aggregation in Silicon Carbide A Theoretical Study on Aluminium-Related Defects in SiC Deep Acceptor Levels of the Carbon Vacancy-Carbon Antisite Pairs in 4H-SiC Electron Paramagnetic Resonance Study of Carbon Antisite-Vacancy Pair in p-Type 4H-SiC Evaluation of Unintentionally Doped Impurities in Silicon Carbide Substrates Using Neutron Activation Analysis Influence Of Growth Conditions on Irradiation Induced Defects in 4H-SiC Intrinsic Defects in Semi-Insulating SiC: Deep Levels and their Roles in Carrier Compensation New Insight in Scandium-Mediated Growth Techniques: Sc-Related Defects in 4H-SiC and 6H-SiC Point Defects in 4H SiC Grown by Halide Chemical Vapor Deposition SIMS Investigation of Ge Incorporation in 3C-SiC Layers Grown from Ge-Si Melts Atomic Crack Defects Developing at Silicon Carbide Surfaces Studied by STM, Synchrotron Radiation-Based -spot XPS and LEEM Sodium Enhanced Oxidation of Si-Face 4H-SiC: A Method to Remove Near Interface Traps Ab Initio Study of Clean and Hydrogen-Saturated Unreconstructed SiC{0001} Surfaces An Approach to Model Temperature Effects of Interface Traps in 4H-SiC Conductive Atomic Force Microscopy Studies on the Reliability of Thermally Oxidized SiO2/4H-SiC Electronic Properties of Thermally Oxidized Single-Domain 3C-SiC/6H-SiC Grown by Vapour-Liquid-Solid Mechanism Ellipsometric and MEIS Studies of 4H-SiC/Si/SiO2 and 4H-SiC/SiO2 Interfaces for MOS Devices Etching of 4 Degrees and 8 Degrees 4H-SiC Using Various Hydrogen-Propane Mixtures in a Commercial Hot-Wall CVD Reactor Formation of Deep Traps at the 4H-SiC/SiO2 Interface when Utilizing Sodium Enhanced Oxidation Generation of Amorphous SiO2/SiC Interface Structure by the First-Principles Molecular Dynamics Simulation Initial Stages of the Graphite-SiC(0001) Interface Formation Studied by Photoelectron Spectroscopy Nanowire Reconstruction on the 4H-SiC(1102) Surface Structure of the 3C-SiC(100) 5x2 Surface Reconstruction Investigated by Synchrotron Radiation Based Grazing Incidence X-Ray Diffraction The Al2O3/4H-SiC Interface Investigated by Thermal Dielectric Relaxation Current Technique The Mechanism of Interface State Passivation by NO Two Dimensional Imaging of the Laterally Inhomogeneous Au/4H-SiC Schottky Barrier by Conductive Atomic Force Microscopy XPS Study of the Electronic Properties of the Ce/4H-SiC Interface, and the Formation of the SiO2/Ce2Si2O7/4H-SiC Interface Structure upon Oxidation Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum Post-Implantation Annealing of SiC: Relevance of the Heating Rate Achieving Low Sheet Resistance from Implanted P-Type Layers in 4H-SiC Using High Temperature Graphite Capped Annealing Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process Comparison of Graphite and BN/AlN Annealing Caps for Ion Implanted SiC Electrical Properties of N Ion Implanted Layer in 3C-SiC(100) Grown on Self-Standing 3C-SiC Substrate Encapsulating Annealing of N+ Implanted 4H-SiC by Diamond-Like-Carbon Film High Temperature Implantation of Aluminum in 4H Silicon Carbide Isochronal Annealing Study of Deep Levels in Hydrogen Implanted p-Type 4H-SiC Modification of Surface Layer during High Temperature Annealing and its Effects on the SiC Diode Characteristics Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with 30Si Isotope: Electron Paramagnetic Resonance Study Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation Selenium and Tellurium Double Donors in SiC Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC Dynamical Simulation of SiO2/4H-SiC(0001) Interface Oxidation Process: from First-Principles Trap Assisted Gas Sensing Mechanism in MISiC Capacitors 4H-SiC Metal-Oxide-Semiconductor (MOS) Capacitors Fabricated by Oxidation in a Tungsten Lamp Furnace in Combination with a Microwave Plasma and Subsequent Deposition of Al2O3 A Comparative Study of Surface Passivation on SiC BJTs with High Current Gain Acceleration Factors in Acceleration Life Test of Thermal Oxides on 4H-SiC Wafers Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose Electrical Properties of Atomic-Layer-Deposited La2O3/Thermal-Nitrided SiO2 Stacking Dielectric on 4H-SiC(0001) Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-Deposited SixNy Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K Application Interface Properties of SiO2/4H-SiC(0001) with Large Off-Angles Formed by N2O Oxidation Modification of SiO2/4H-SiC Interface Properties by High-Pressure H2O Vapor Annealing Optimizing the Thermally Oxidized 4H-SiC MOS Interface for P-Channel Devices Study of Polyimide Films as Passivation for High Temperature High Voltage Silicon Carbide Devices Time-Dependent Dielectric Breakdown of Thermal Oxides on 4H-SiC Trap Assisted Conduction in High K Dielectric Capacitors on 4H-SiC X-Ray and AFM Analysis of Al2O3 Deposited by ALCVD on n-Type 4H-SiC A Case for High Temperature, High Voltage SiC Bipolar Devices Ab Initio Study of the Structural and Electronic Properties of the Graphene/SiC{0001} Interface Development of Low Resistance Al/Ti Stacked Metal Contacts to p-Type 4H-SiC Electronic Structure of Graphite/6H-SiC Interfaces Evaluation of Specific Contact Resistance of Al, Ti, and Ni Contacts to N Ion Implanted 3C-SiC(100) High Temperature Direct Double Side Cooled Inverter Module for Hybrid Electric Vehicle Application Interface Reactions and Electrical Properties of Ta/4H-SiC Contacts Low Resistance Cathode Metallization and Die-Bonding in Silicon Carbide P-N Junction Diodes Low Specific Contact Resistance to 3C-SiC Grown on (100) Si Substrates Nanolayered Au/Ti/Al Ohmic Contacts to P-Type SiC: Electrical, Morphological and Chemical Properties Depending on the Contact Composition Plasma Etching for Backside Wafer Thinning of SiC Sloped Sidewalls in 4H-SiC Mesa Structure Formed by a Cl2-O2 Thermal Etching The Schottky Parameter Test for Combined Diffusion Welded and Sputter Large Area Contacts Nano-Columnar Pore Formation in the Photo-Electrochemical Etching of n-Type 6H SiC Porosity Dependence of the Velocity of Surface and Bulk Acoustic Waves in Porous Silicon Carbide Films Damage-Free Planarization of 4H-SiC (0001) by Catalyst-Referred Etching High Throughput SiC Wafer Polishing with Good Surface Morphology Polishing Characteristics of 4H-SiC Si-Face and C-Face by Plasma Chemical Vaporization Machining 4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates 4H-SiC Power BJTs with High Current Gain and Low On-Resistance 9 kV 4H-SiC IGBTs with 88 m *cm2 of R diff, on A Comparison of High Temperature Performance of SiC DMOSFETs and JFETs Critical Reliability Issues for SiC Power MOSFETs Operated at High Temperature Electrical Properties of p-Channel MOSFETs Fabricated on 4H- and 6H-SiC Fabrication and Characterization of 4H-SiC MOSFET with MOCVD-Grown Al2O3 Gate Insulator Hall Effect and Admittance Measurements of n-Channel 6H-SiC MOSFETs High Frequency 4H-SiC MOSFETs High Temperature Characterisation of 4H-SiC VJFET Improvement of Electrical Characteristics of Ion Implanted 4H-SiC MESFET on a Semi-Insulating Substrate Increased Channel Mobility in 4H-SiC UMOSFETs Using On-Axis Substrates Investigation of Drain Current Saturation in 4H-SiC MOSFETs Lateral 4H-SiC MOSFETs with Low On-Resistance by Using Two-Zone Double RESURF Structure Low Output Capacitance 1500V 4H-SiC MOSFETs with 8 m cm2 Specific On-Resistance Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations Realization of Low On-Resistance 4H-SiC Power MOSFETs by Using Retrograde Profile in P-Body SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 DegreesC SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps Simulation Study of High-k Materials for SiC Trench MOSFETs Temperature Stability of Heteropolytypic 6H/3C FETs Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs Reliability of SiC Power Devices Against Cosmic Radiation-Induced Failure 600 V 100 A 4H-SiC Junction Barrier Schottky Diode with Guard Rings Termination Breakdown Voltage Characteristics of FLR-Assisted SiC-SBD Formed by Aluminum Metal Junction Edge Termination Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond FLR Geometry Dependence of Breakdown Voltage Characteristics for JBS-Assisted FLR SiC-SBD High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension Improvement of SBD Electronic Characteristics Using Sacrificial Oxidation Removing the Degraded Layer from SiC Surface after High Temperature Annealing Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) The Influence of In-Grown Stacking Faults on the Reverse Current-Voltage Characteristics of 4H-SiC Schottky Barrier Diodes Bipolar SiC-Diodes - Challenges Arising from Physical and Technological Aspects Progress on the Development of 10 kV 4H-SiC Pin Diodes for High Current/High Voltage Power Handling Applications 1.2 kV Pin Diodes with SiCrystal Epiwafer Behaviour of 4H-SiC pin Diodes Studied by Numerical Device Simulation Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes Degradation of Charge Collection Efficiency Obtained for 6H-SiC n+p Diodes Irradiated with Gold Ions Effects of Very High Neutron Fluence Irradiation on p+n Junction 4H-SiC Diodes Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process Evaluation of Termination Techniques for 4H-SiC Pin Diodes and Trench JFETs Fabrication of pn-Junction Diode for N+ Implanted 4H-SiC(0001) Annealed by EBAS Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum Potential Benefits of Silicon Carbide Zener Diodes Used as Components of Intrinsically Safe Barriers 4H-SiC High Temperature Spectrometers 4H-SiC Schottky Array Photodiodes for UV Imaging Application Based on the Pinch-off Surface Effect Fabrication and Test of 3C-SiC Electrostatic Resonators Study of Dark Currents in 4H-SiC UV APDs with Separate Absorption and Multiplication Regions Surface Functionalization of SiC for Biosensor Applications The Influence of the Extreme Fluences of 8 MeV Protons on Characteristics of SiC Nuclear Detectors Produced by Al Implantation SiC-Based Power Converters for High Temperature Applications Analysis of Novel Packaging Techniques for High Power Electronics in SiC Comparison of Bipolar and Unipolar SiC Switching Devices for Very High Power Applications Demonstration of High-Voltage SiC VJFET Cascode in a Half-Bridge Inverter Fabrication of a Multi-Chip Module of 4H-SiC RESURF-Type JFETs High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes High Temperature DC-DC Converter Performance Comparison Using SiC JFETs, BJTs and Si MOSFETs Improved Efficiency in Power Factor Correction Circuits with a pn-Gated SiC FET Microwave p-i-n Diodes and Switches Based on 4H-SiC New Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication Process OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes Proposed Architecture for SiC Switches and Diodes in a Switch Mode Power Supply Advances in AlGaN/GaN/SiC Microwave Devices A Manipulation of Semiconducting GaN Nanowires by Dielectrophoresis Aligned Assembly Deposition (DAAD) Current Transport in Ti/Al/Ni/Au Ohmic Contacts to GaN and AlGaN Employing Discontinuous and Continuous Growth Modes for Preparation of AlN Nanostructures on SiC Substrates Hot Electron Induced Current Collapse in AlGaN/GaN HEMTs Impact of Acceptor Concentration on Electronic Properties of n+-GaN/p+-SiC Heterojunction for GaN/SiC Heterojunction Bipolar Transistor Influence of Micropipe and Domain Boundary in SiC Substrate on the DC Characteristics of AlGaN/GaN HFET

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詳細情報

• NII書誌ID(NCID): BA85213444
• ISBN:
  • 9780878494422
• LCCN: 2007278058
• 出版国コード: sz
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Stafa-Zurich
• ページ数/冊数: xxiv, 1061 p.
• 大きさ: 25 cm
• 分類:
  • LCC : QC611.8.S5
  • LCC : TA401.3
  • DC22 : 620.193
• 件名:
  • LCSH : Silicon carbide -- Congresses
  • LCSH : Silicon carbide -- Electric properties -- Congresses
  • FREE : ICSCRM
• 親書誌ID:
  • BA00294222