Measurement and modeling of silicon heterostructure devices

著者

    • Cressler, John D.

書誌事項

Measurement and modeling of silicon heterostructure devices

edited by John D. Cressler

CRC Press, c2008

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注記

Includes bibliographical references and index

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内容説明・目次

内容説明

When you see a nicely presented set of data, the natural response is: "How did they do that; what tricks did they use; and how can I do that for myself?" Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.

目次

Overview: Measurement and Modeling. Best-Practice AC Measurement Techniques. Industrial Application of TCAD for SiGe Development. Compact Modeling of SiGe HBTs: HICUM. Compact Modeling of SiGe HBTs: Mextram. CAD Tools and Design Kits. Parasitic Modeling and Noise Mitigation Approaches in Silicon Germanium RF Designs. Transmission Lines on Si. Improved De-Embedding Techniques.

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