Microscopy of semiconducting materials : proceedings of the 15th conference, 2-5 April, 2007, Cambridge, UK
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書誌事項
Microscopy of semiconducting materials : proceedings of the 15th conference, 2-5 April, 2007, Cambridge, UK
（Springer proceedings in physics, 120）
Springer, c2008
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注記
Includes bibliographical references and index
内容説明・目次
内容説明
This volume contains invited and contributed papers presented at the conference on 'Microscopy of Semiconducting Materials' held at the University of Cambridge on 2-5 April 2007. The event was organised under the auspices of the Electron Microscopy and Analysis Group of the Institute of Physics, the Royal Microscopical Society and the Materials Research Society. This international conference was the fifteenth in the series that focuses on the most recent world-wide advances in semiconductor studies carried out by all forms of microscopy and it attracted delegates from more than 20 countries. With the relentless evolution of advanced electronic devices into ever smaller nanoscale structures, the problem relating to the means by which device features can be visualised on this scale becomes more acute. This applies not only to the imaging of the general form of layers that may be present but also to the determination of composition and doping variations that are employed. In view of this scenario, the vital importance of transmission and scanning electron microscopy, together with X-ray and scanning probe approaches can immediately be seen. The conference featured developments in high resolution microscopy and nanoanalysis, including the exploitation of recently introduced aberration-corrected electron microscopes. All associated imaging and analytical techniques were demonstrated in studies including those of self-organised and quantum domain structures. Many analytical techniques based upon scanning probe microscopies were also much in evidence, together with more general applications of X-ray diffraction methods.
目次
Envisaged contents: The main topic areas are as follows: The characterisation of as-grown semiconductors in both bulk and thin film forms. The study of nanostructures of all types from quantum dots, wires, etc to nanotubes. The investigation of lattice defect and impurity behaviour in semiconducting materials. The study of the effects of semiconductor processing treatments
- oxidation, nitridation, ion implantation, annealing, silicidation, etc. The assessment of finished electronic devices, including studies of the influence of structural defects upon their behaviour and important new design features such as high/low k dielectrics, etc. The state of the art in analytical technique development from advances in FEGTEM nanoanalysis to exploitation of FIB milling for specimen preparation. Special conference sessions focused attention on recent advances in a number of areas of particular current interest, for example: Developments in the use of high resolution imaging and analytical transmission electron microscopy
- studies of bulk material, layers and interfaces. Advances in FIB milling and nanofabrication. The nature of epitaxial layers, superlattices and quantum well, wire and dot structures
- strain relaxation, defect introduction, morphological distortion, self-organisation, luminescence. Wide bandgap semiconductors, especially III-nitrides. The structures of dislocations and defect boundaries in semiconductors. Advances in SiGe/Si for device structures such as HBTs, MOSFETs, terahertz emitters, etc. Metal-semiconductor contacts and silicides. The effects of processing treatments using both conventional and transient techniques. The exploitation of advanced scanning techniques
-SEM-EBIC, SEM-CL, etc
-STM, AFM, SCM, BEEM, etc
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