Fundamental studies of semiconductor heteroepitaxy

著者

• Ruth, R. P.
• Roccwell International Corp.

書誌事項

Fundamental studies of semiconductor heteroepitaxy

[by R.P. Ruth] ... [et al.] ; [edited by] Roccwell International Corp

（海外研究開発レポート, data no. D-1091(1)）

National Technical Information Service, U.S. Dept. of Commerce, [1973]

• pt. 1, [1]
• pt. 1, [2]

タイトル別名

Fundamental studies of semiconductor heteroepitaxy : final report

注記

Facsim. reprint. Originally published: [Washington, D.C.] : ARPA Support Office, Research, Development, Engineering and Missile systems Laboratory. Huntsville, Ala. : United States Army Missile Command AMSMI RND, Redstone Arsenal, [1973]

"Prepared for Army Missile Command, Advanced Research Projects Agency"

"AD-767 287"

"August 1973"

Pagination: pt. 1, [1], xxvii, 118 ; pt. 1, [2], 119-235, R1-R5

On original t.p.: Contract no. DAAHO1-70-C-1311

Bibliography: pt. 1, [2], leaves R1-R4

詳細情報

• NII書誌ID(NCID): BA87770725
• 出版国コード: us
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Springfield, Va.
• ページ数/冊数: 1 v. in 2
• 大きさ: 26 cm
• 親書誌ID:
  • BN09293843